页 9 - Infineon Technologies 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 二极管 - 整流器 - 单

记录 805
页  9/27
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
D1230N18TXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 1230A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 1230A
  • Voltage - Forward (Vf) (Max) @ If: 1.063 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
库存9
1800 V
1230A
1.063 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 1800 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
AIDW20S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 20A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 650 V
  • Capacitance @ Vr, F: 584pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
650 V
20A
1.7 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
120 µA @ 650 V
584pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
BAS70B5003
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 70mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
  • Operating Temperature - Junction: 150°C
封装: -
Request a Quote
70 V
70mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
100 nA @ 50 V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-3
150°C
BAS70B5000
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 70mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
  • Operating Temperature - Junction: 150°C
封装: -
Request a Quote
70 V
70mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
100 nA @ 50 V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-3
150°C
IDWD100E65E7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 100 A
  • Speed: Fast Recovery =< 500ns, > 5A (Io)
  • Reverse Recovery Time (trr): 98 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存720
650 V
150A
2.1 V @ 100 A
Fast Recovery =< 500ns, > 5A (Io)
98 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C
D1331SH45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 1710A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1710A
  • Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
封装: -
库存6
4500 V
1710A
4.2 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 4500 V
-
Chassis Mount
DO-200AE
-
0°C ~ 140°C
IDK16G120C5XTMA1
Infineon Technologies

DIODE SIL CARB 1.2KV 40A TO263-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存1,794
1200 V
40A
1.95 V @ 16 A
No Recovery Time > 500mA (Io)
-
80 µA @ 1200 V
730pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2-1
-55°C ~ 175°C
46DN06B02ELEMXPSA1
Infineon Technologies

DIODE GP 600V 10450A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10450A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
封装: -
库存15
600 V
10450A
980 mV @ 6000 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 600 V
-
Clamp On
DO-200AC, K-PUK
BG-D-ELEM-1
180°C (Max)
IDL06G65C5XUMA2
Infineon Technologies

DIODE SIL CARBIDE 650V 6A VSON-4

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 110 µA @ 650 V
  • Capacitance @ Vr, F: 190pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存8,724
650 V
6A
1.7 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
110 µA @ 650 V
190pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDC10D120T6MX1SA1
Infineon Technologies

DIODE GP 1.2KV 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
1200 V
15A
2.05 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
3.5 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
D1461S45TXPSA2
Infineon Technologies

DIODE GEN PURP 1720A D10026K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1720A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200, Variant
  • Supplier Device Package: BG-D10026K-1
  • Operating Temperature - Junction: -40°C ~ 140°C
封装: -
Request a Quote
-
1720A
-
Standard Recovery >500ns, > 200mA (Io)
-
200 mA @ 4500 V
-
Chassis Mount
DO-200, Variant
BG-D10026K-1
-40°C ~ 140°C
D1461S45TXPSA1
Infineon Technologies

DIODE GEN PURP 1720A D10026K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1720A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200, Variant
  • Supplier Device Package: BG-D10026K-1
  • Operating Temperature - Junction: -40°C ~ 140°C
封装: -
Request a Quote
-
1720A
-
Standard Recovery >500ns, > 200mA (Io)
-
200 mA @ 4500 V
-
Chassis Mount
DO-200, Variant
BG-D10026K-1
-40°C ~ 140°C
SIDC30D120H8X1SA4
Infineon Technologies

DIODE GP 1.2KV 50A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
1200 V
50A
1.97 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
D2450N06TXPSA1
Infineon Technologies

DIODE GEN PURP 600V 2450A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2450A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
Request a Quote
600 V
2450A
880 mV @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 600 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 180°C
IDDD10G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 29A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 29A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 33 µA @ 420 V
  • Capacitance @ Vr, F: 495pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存4,629
650 V
29A
-
No Recovery Time > 500mA (Io)
0 ns
33 µA @ 420 V
495pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
21DN02S01EVOPRXPSA1
Infineon Technologies

DIODE E-EUPEC-0

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
D770N14TXPSA1
Infineon Technologies

DIODE GEN PURP 1.4KV 770A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 770A
  • Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
Request a Quote
1400 V
770A
1.08 V @ 400 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1400 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
ND242S10KHPSA1
Infineon Technologies

DIODE GEN PURP 1KV 261A PB50ND-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 261A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50ND-1
  • Operating Temperature - Junction: -40°C ~ 135°C
封装: -
Request a Quote
1000 V
261A
-
Standard Recovery >500ns, > 200mA (Io)
-
200 mA @ 1000 V
-
Chassis Mount
Module
BG-PB50ND-1
-40°C ~ 135°C
D450S20TXPSA1
Infineon Technologies

DIODE GEN PURP 2KV 443A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 443A
  • Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6.2 µs
  • Current - Reverse Leakage @ Vr: 10 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -25°C ~ 180°C
封装: -
Request a Quote
2000 V
443A
2.25 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
6.2 µs
10 mA @ 2000 V
-
Clamp On
DO-200AA, A-PUK
-
-25°C ~ 180°C
GLHUELSE1627XPSA1
Infineon Technologies

DUMMY 57

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SIDC14D120H8X1SA1
Infineon Technologies

DIODE GP 1.2KV 25A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
1200 V
25A
1.97 V @ 25 A
Standard Recovery >500ns, > 200mA (Io)
-
20 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
IDK08G120C5XTMA1
Infineon Technologies

DIODE SIC 1.2KV 22.8A TO263-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 22.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存1,548
1200 V
22.8A
1.95 V @ 8 A
No Recovery Time > 500mA (Io)
-
40 µA @ 1200 V
365pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2-1
-55°C ~ 175°C
IDD09SG60CXTMA2
Infineon Technologies

DIODE SIL CARB 600V 9A TO252-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 600 V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
600 V
9A
2.1 V @ 9 A
No Recovery Time > 500mA (Io)
0 ns
80 µA @ 600 V
280pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDWD10G120C5XKSA1
Infineon Technologies

DIODE SIL CARB 1.2KV 34A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 34A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
1200 V
34A
1.65 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
80 µA @ 1200 V
730pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
AIDW40S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 40A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 650 V
  • Capacitance @ Vr, F: 1138pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存789
650 V
40A
1.7 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
120 µA @ 650 V
1138pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
SIDC81D120H8X1SA3
Infineon Technologies

DIODE GEN PURP 1.2KV 150A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
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1200 V
150A
2.15 V @ 150 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
-
-
-
-40°C ~ 175°C
IDDD04G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 13A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 13A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 14 µA @ 420 V
  • Capacitance @ Vr, F: 205pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存14,805
650 V
13A
-
No Recovery Time > 500mA (Io)
0 ns
14 µA @ 420 V
205pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
BAT54WE6327
Infineon Technologies

DIODE SCHOTT 30V 200MA SOT323-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
  • Operating Temperature - Junction: 150°C
封装: -
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30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3
150°C
SIDC06D60E6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 10A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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600 V
10A
1.25 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
DZ435N40KHPSA1
Infineon Technologies

DIODE GEN PURP 4KV 700A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
库存9
4000 V
700A
1.71 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 4000 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C