页 3 - Infineon Technologies 产品 - 二极管 - 整流器 - 单

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC03D60C8X1SA2	Infineon Technologies	DIODE GEN PURP 600V 10A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	600 V	10A	1.95 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
DZ600N16KB01HPSA1	Infineon Technologies	DIODE GP 1.8KV 735A PB501-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 735A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB501-1 Operating Temperature - Junction: 150°C (Max)	封装: -	Request a Quote	1800 V	735A	-	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 1800 V	-	Chassis Mount	Module	BG-PB501-1	150°C (Max)
D8320N04TVFXPSA1	Infineon Technologies	DIODE GEN PURP 400V 8320A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8320A Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: - Operating Temperature - Junction: -25°C ~ 150°C	封装: -	Request a Quote	400 V	8320A	795 mV @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 400 V	-	Chassis Mount	DO-200AD	-	-25°C ~ 150°C
SIDC50D60C6X1SA1	Infineon Technologies	DIODE GP 600V 200A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	600 V	200A	1.9 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDWD140E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存720	-	-	-	-	-	-	-	-	-	-	-
IDD15E60BUMA1	Infineon Technologies	DIODE GP 600V 29.2A TO252-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 29.2A Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	600 V	29.2A	2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	87 ns	50 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-3	-40°C ~ 175°C
SIDC85D170HX1SA2	Infineon Technologies	DIODE GP 1.7KV 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 1700 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	1700 V	150A	1.8 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1700 V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
IDL02G65C5XUMA2	Infineon Technologies	DIODE SIL CARBIDE 650V 2A VSON-4 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 35 µA @ 650 V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存8,970	650 V	2A	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	35 µA @ 650 V	70pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
D5810N04TVFXPSA1	Infineon Technologies	DIODE GEN PURP 400V 5800A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5800A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	封装: -	Request a Quote	400 V	5800A	-	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 400 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 180°C
ND260N12KHPSA1	Infineon Technologies	DIODE GP 1.2KV 104A PB50ND-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 104A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: -40°C ~ 135°C	封装: -	Request a Quote	1200 V	104A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1200 V	-	Chassis Mount	Module	BG-PB50ND-1	-40°C ~ 135°C
D2201N45TXPSA1	Infineon Technologies	DIODE GEN PURP 4.5KV 3250A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 3250A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 140°C	封装: -	Request a Quote	4500 V	3250A	1.2 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4500 V	-	Chassis Mount	DO-200AD	-	-40°C ~ 140°C
ND171N08KHPSA1	Infineon Technologies	DIODE GEN PURP 800V 171A PB34-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 171A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB34-1 Operating Temperature - Junction: 150°C (Max)	封装: -	Request a Quote	800 V	171A	1.26 V @ 500 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 800 V	-	Chassis Mount	Module	BG-PB34-1	150°C (Max)
GATELEADRD406XPSA1	Infineon Technologies	STD THYR/DIODEN DISC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
IDWD30E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存720	-	-	-	-	-	-	-	-	-	-	-
PX8847HDNG008XTMA1	Infineon Technologies	LED PX8847HDNG008XTMA1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D740N48TXPSA1	Infineon Technologies	DIODE GEN PURP 4.8KV 750A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4800 V Current - Average Rectified (Io): 750A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 mA @ 4800 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	封装: -	Request a Quote	4800 V	750A	1.45 V @ 700 A	Standard Recovery >500ns, > 200mA (Io)	-	70 mA @ 4800 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 160°C
BAS40E6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 40V 120MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Current - Reverse Leakage @ Vr: 1 µA @ 30 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存71,454	40 V	120mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	100 ps	1 µA @ 30 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23	-55°C ~ 150°C
D2520N22TVFXPSA1	Infineon Technologies	DIODE GEN PURP 2520A D7526K0-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 2520A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: BG-D7526K0-1 Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	-	2520A	-	Standard Recovery >500ns, > 200mA (Io)	-	75 mA @ 2200 V	-	Clamp On	DO-200AC, K-PUK	BG-D7526K0-1	-40°C ~ 175°C
D56U40CXPSA1	Infineon Technologies	DIODE GEN PURP 4KV 102A DSW272-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 102A Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.3 µs Current - Reverse Leakage @ Vr: 5 mA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: Stud Supplier Device Package: BG-DSW272-1 Operating Temperature - Junction: 125°C	封装: -	Request a Quote	4000 V	102A	4.5 V @ 320 A	Standard Recovery >500ns, > 200mA (Io)	3.3 µs	5 mA @ 4000 V	-	Stud Mount	Stud	BG-DSW272-1	125°C
ND171N18KHPSA1	Infineon Technologies	DIODE GEN PURP 1.8KV 171A PB34-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 171A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB34-1 Operating Temperature - Junction: -40°C ~ 135°C	封装: -	Request a Quote	1800 V	171A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1800 V	-	Chassis Mount	Module	BG-PB34-1	-40°C ~ 135°C
ND171N18KHPSA2	Infineon Technologies	DIODE GEN PURP 1.8KV 171A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 171A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: 150°C	封装: -	库存3	1800 V	171A	1.26 V @ 500 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1800 V	-	Chassis Mount	Module	-	150°C
65DN06B02ELEMPRXPSA1	Infineon Technologies	DIODE GP 600V 15130A D-ELEM-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15130A Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: BG-D-ELEM-1 Operating Temperature - Junction: 180°C (Max)	封装: -	Request a Quote	600 V	15130A	890 mV @ 8000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 600 V	-	Clamp On	DO-200AB, B-PUK	BG-D-ELEM-1	180°C (Max)
D950N22TXPSA1	Infineon Technologies	DIODE GEN PURP 2.2KV 950A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 950A Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	封装: -	Request a Quote	2200 V	950A	1.12 V @ 650 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2200 V	-	Clamp On	DO-200AA, A-PUK	-	-40°C ~ 180°C
D4600U45X172XPSA1	Infineon Technologies	DIODE GP 4.5KV 4450A D17226K-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 4450A Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: BG-D17226K-1 Operating Temperature - Junction: 140°C (Max)	封装: -	库存3	4500 V	4450A	2 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	25 mA @ 4500 V	-	Chassis Mount	DO-200AE	BG-D17226K-1	140°C (Max)
D650S12TXPSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 620A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 620A Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.3 µs Current - Reverse Leakage @ Vr: 20 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote	1200 V	620A	2.25 V @ 1200 A	Standard Recovery >500ns, > 200mA (Io)	5.3 µs	20 mA @ 1200 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 150°C
GATELEADWH406XPSA1	Infineon Technologies	STD THYR/DIODEN DISC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D405N26EXPSA1	Infineon Technologies	RECTIFIER DIODE DISC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D970N06TXPSA1	Infineon Technologies	DIODE GEN PURP 600V 970A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 970A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	封装: -	库存36	600 V	970A	970 mV @ 750 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 600 V	-	Clamp On	DO-200AA, A-PUK	-	-40°C ~ 180°C
DD171N16KKHOSA1	Infineon Technologies	DIODE MODULE DK Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DD400S17K4C	Infineon Technologies	RECTIFIER DIODE MODULE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

SIDC03D60C8X1SA2

Infineon Technologies

DIODE GEN PURP 600V 10A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

600 V

10A

1.95 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-40°C ~ 175°C

DZ600N16KB01HPSA1

Infineon Technologies

DIODE GP 1.8KV 735A PB501-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 735A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB501-1
Operating Temperature - Junction: 150°C (Max)

封装: -

Request a Quote

1800 V

735A

-

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 1800 V

-

Chassis Mount

Module

BG-PB501-1

150°C (Max)

D8320N04TVFXPSA1

Infineon Technologies

DIODE GEN PURP 400V 8320A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 8320A
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: -
Operating Temperature - Junction: -25°C ~ 150°C

封装: -

Request a Quote

400 V

8320A

795 mV @ 4000 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 400 V

-

Chassis Mount

DO-200AD

-

-25°C ~ 150°C

SIDC50D60C6X1SA1

Infineon Technologies

DIODE GP 600V 200A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

600 V

200A

1.9 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

IDWD140E120D7XKSA1

Infineon Technologies

INDUSTRY 14

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存720

-

IDD15E60BUMA1

Infineon Technologies

DIODE GP 600V 29.2A TO252-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 29.2A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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600 V

29.2A

2 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

87 ns

50 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

PG-TO252-3

-40°C ~ 175°C

SIDC85D170HX1SA2

Infineon Technologies

DIODE GP 1.7KV 150A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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1700 V

150A

1.8 V @ 150 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 1700 V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

IDL02G65C5XUMA2

Infineon Technologies

DIODE SIL CARBIDE 650V 2A VSON-4

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存8,970

650 V

2A

1.7 V @ 2 A

No Recovery Time > 500mA (Io)

0 ns

35 µA @ 650 V

70pF @ 1V, 1MHz

Surface Mount

4-PowerTSFN

PG-VSON-4

-55°C ~ 175°C

D5810N04TVFXPSA1

Infineon Technologies

DIODE GEN PURP 400V 5800A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5800A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

封装: -

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400 V

5800A

-

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 400 V

-

Clamp On

DO-200AC, K-PUK

-

-40°C ~ 180°C

ND260N12KHPSA1

Infineon Technologies

DIODE GP 1.2KV 104A PB50ND-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 104A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C

封装: -

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1200 V

104A

-

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1200 V

-

Chassis Mount

Module

BG-PB50ND-1

-40°C ~ 135°C

D2201N45TXPSA1

Infineon Technologies

DIODE GEN PURP 4.5KV 3250A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 3250A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 140°C

封装: -

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4500 V

3250A

1.2 V @ 2500 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 4500 V

-

Chassis Mount

DO-200AD

-

-40°C ~ 140°C

ND171N08KHPSA1

Infineon Technologies

DIODE GEN PURP 800V 171A PB34-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 171A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB34-1
Operating Temperature - Junction: 150°C (Max)

封装: -

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800 V

171A

1.26 V @ 500 A

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 800 V

-

Chassis Mount

Module

BG-PB34-1

150°C (Max)

GATELEADRD406XPSA1

Infineon Technologies

STD THYR/DIODEN DISC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

IDWD30E120D7XKSA1

Infineon Technologies

INDUSTRY 14

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存720

-

PX8847HDNG008XTMA1

Infineon Technologies

LED PX8847HDNG008XTMA1

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

D740N48TXPSA1

Infineon Technologies

DIODE GEN PURP 4.8KV 750A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4800 V
Current - Average Rectified (Io): 750A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 mA @ 4800 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

封装: -

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4800 V

750A

1.45 V @ 700 A

Standard Recovery >500ns, > 200mA (Io)

-

70 mA @ 4800 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 160°C

BAS40E6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存71,454

40 V

120mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

100 ps

1 µA @ 30 V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23

-55°C ~ 150°C

D2520N22TVFXPSA1

Infineon Technologies

DIODE GEN PURP 2520A D7526K0-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 2520A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: BG-D7526K0-1
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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-

2520A

-

Standard Recovery >500ns, > 200mA (Io)

-

75 mA @ 2200 V

-

Clamp On

DO-200AC, K-PUK

BG-D7526K0-1

-40°C ~ 175°C

D56U40CXPSA1

Infineon Technologies

DIODE GEN PURP 4KV 102A DSW272-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000 V
Current - Average Rectified (Io): 102A
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Current - Reverse Leakage @ Vr: 5 mA @ 4000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: Stud
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C

封装: -

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4000 V

102A

4.5 V @ 320 A

Standard Recovery >500ns, > 200mA (Io)

3.3 µs

5 mA @ 4000 V

-

Stud Mount

Stud

BG-DSW272-1

125°C

ND171N18KHPSA1

Infineon Technologies

DIODE GEN PURP 1.8KV 171A PB34-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 171A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB34-1
Operating Temperature - Junction: -40°C ~ 135°C

封装: -

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1800 V

171A

-

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1800 V

-

Chassis Mount

Module

BG-PB34-1

-40°C ~ 135°C

ND171N18KHPSA2

Infineon Technologies

DIODE GEN PURP 1.8KV 171A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 171A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: 150°C

封装: -

库存3

1800 V

171A

1.26 V @ 500 A

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1800 V

-

Chassis Mount

Module

-

150°C

65DN06B02ELEMPRXPSA1

Infineon Technologies

DIODE GP 600V 15130A D-ELEM-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15130A
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)

封装: -

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600 V

15130A

890 mV @ 8000 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 600 V

-

Clamp On

DO-200AB, B-PUK

BG-D-ELEM-1

180°C (Max)

D950N22TXPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 950A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Average Rectified (Io): 950A
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

封装: -

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2200 V

950A

1.12 V @ 650 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 2200 V

-

Clamp On

DO-200AA, A-PUK

-

-40°C ~ 180°C

D4600U45X172XPSA1

Infineon Technologies

DIODE GP 4.5KV 4450A D17226K-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 4450A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: BG-D17226K-1
Operating Temperature - Junction: 140°C (Max)

封装: -

库存3

4500 V

4450A

2 V @ 2500 A

Standard Recovery >500ns, > 200mA (Io)

-

25 mA @ 4500 V

-

Chassis Mount

DO-200AE

BG-D17226K-1

140°C (Max)

D650S12TXPSA1

Infineon Technologies

DIODE GEN PURP 1.2KV 620A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 620A
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.3 µs
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

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1200 V

620A

2.25 V @ 1200 A

Standard Recovery >500ns, > 200mA (Io)

5.3 µs

20 mA @ 1200 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 150°C

GATELEADWH406XPSA1

Infineon Technologies

STD THYR/DIODEN DISC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

D405N26EXPSA1

Infineon Technologies

RECTIFIER DIODE DISC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

D970N06TXPSA1

Infineon Technologies

DIODE GEN PURP 600V 970A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 970A
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

封装: -

库存36

600 V

970A

970 mV @ 750 A

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 600 V

-

Clamp On

DO-200AA, A-PUK

-

-40°C ~ 180°C

DD171N16KKHOSA1

Infineon Technologies

DIODE MODULE DK

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

DD400S17K4C

Infineon Technologies

RECTIFIER DIODE MODULE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-