图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
|
封装: A, Axial |
库存305,592 |
|
1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL
|
封装: A, Axial |
库存6,704 |
|
800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
|
封装: A, Axial |
库存3,968 |
|
1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL
|
封装: A, Axial |
库存7,184 |
|
800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
封装: A, Axial |
库存7,600 |
|
400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 150MA DO35
|
封装: DO-204AH, DO-35, Axial |
库存5,872 |
|
200V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 200V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 70V 150MA DO35
|
封装: DO-204AH, DO-35, Axial |
库存45,912 |
|
70V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 70V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
封装: DO-204AH, DO-35, Axial |
库存897,000 |
|
75V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 75MA DO35
|
封装: DO-204AA, DO-7, Axial |
库存3,696 |
|
50V | 75mA | 1V @ 75mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AA, DO-7, Axial | DO-35 | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 50V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存5,472 |
|
50V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存7,984 |
|
45V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存4,080 |
|
40V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 100V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存4,864 |
|
100V | 1A | 830mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 90V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存4,720 |
|
90V | 1A | 810mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 60V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存4,976 |
|
60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 50V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存5,648 |
|
50V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存4,304 |
|
40V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1.4A AXIAL
|
封装: E, Axial |
库存7,600 |
|
880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 880V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 1.75A D5B
|
封装: SQ-MELF, E |
库存5,040 |
|
660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.75A D5B
|
封装: SQ-MELF, E |
库存2,880 |
|
440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.75A AXIAL
|
封装: E, Axial |
库存3,392 |
|
440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.75A D5B
|
封装: SQ-MELF, E |
库存3,728 |
|
220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.75A AXIAL
|
封装: E, Axial |
库存6,768 |
|
220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1A D5A
|
封装: SQ-MELF, A |
库存3,184 |
|
1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1A D5A
|
封装: A, Axial |
库存7,952 |
|
1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 990V 1A D5A
|
封装: A, Axial |
库存7,552 |
|
990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1A D5A
|
封装: SQ-MELF, A |
库存2,160 |
|
880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1A D5A
|
封装: A, Axial |
库存6,688 |
|
880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 1.2A D5A
|
封装: SQ-MELF, A |
库存3,472 |
|
660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.2A D5A
|
封装: SQ-MELF, A |
库存4,256 |
|
440V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |