图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 440V 1.2A AXIAL
|
封装: A, Axial |
库存7,168 |
|
440V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.2A D5A
|
封装: SQ-MELF, A |
库存7,856 |
|
220V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.2A AXIAL
|
封装: A, Axial |
库存6,640 |
|
220V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 3A D5B
|
封装: SQ-MELF, B |
库存5,456 |
|
50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A D5A
|
封装: SQ-MELF, A |
库存5,904 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A D5A
|
封装: SQ-MELF, A |
库存3,936 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A AXIAL
|
封装: A, Axial |
库存4,352 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A D5A
|
封装: SQ-MELF, A |
库存7,520 |
|
800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A D5A
|
封装: SQ-MELF, A |
库存2,848 |
|
400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE STD REC 400V 5A
|
封装: B, Axial |
库存5,968 |
|
400V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 500V 3A AXIAL
|
封装: B, Axial |
库存3,552 |
|
500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 500V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
封装: B, Axial |
库存4,864 |
|
100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 3A D5B
|
封装: SQ-MELF, B |
库存3,840 |
|
50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL
|
封装: A, Axial |
库存3,040 |
|
800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1.4A D5B
|
封装: SQ-MELF, E |
库存4,608 |
|
880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 880V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 1.75A AXIAL
|
封装: E, Axial |
库存5,488 |
|
660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.75A D5B
|
封装: SQ-MELF, E |
库存6,896 |
|
440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.75A AXIAL
|
封装: E, Axial |
库存2,496 |
|
220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1A D5A
|
封装: SQ-MELF, A |
库存7,680 |
|
1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 500nA @ 1100V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 990V 1A D5A
|
封装: SQ-MELF, A |
库存7,216 |
|
990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 990V 1A AXIAL
|
封装: A, Axial |
库存3,440 |
|
990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1A D5A
|
封装: SQ-MELF, A |
库存7,888 |
|
880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1A AXIAL
|
封装: A, Axial |
库存5,040 |
|
880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 2A D5A
|
封装: SQ-MELF, A |
库存6,352 |
|
660V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 2A D5A
|
封装: SQ-MELF, A |
库存2,512 |
|
440V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 2A AXIAL
|
封装: A, Axial |
库存23,916 |
|
440V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 2A D5A
|
封装: SQ-MELF, A |
库存7,680 |
|
220V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 2A AXIAL
|
封装: A, Axial |
库存5,968 |
|
220V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | Axial | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 500V 3A D5B
|
封装: SQ-MELF, B |
库存3,216 |
|
500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 500V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1.4A AXIAL
|
封装: E, Axial |
库存2,480 |
|
1100V | 1.4A | 1.6V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 2µA @ 1000V | - | Through Hole | E, Axial | - | -65°C ~ 175°C |