页 45 - Microsemi Corporation 产品 - 二极管 - 整流器 - 单

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N6629	Microsemi Corporation	DIODE GEN PURP 880V 1.4A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 880V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 2µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: E, Axial	库存5,520	880V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 800V	-	Through Hole	E, Axial	-	-65°C ~ 175°C
JAN1N6628	Microsemi Corporation	DIODE GEN PURP 660V 1.75A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: E, Axial	库存3,936	660V	1.75A	1.35V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 600V	-	Through Hole	E, Axial	-	-65°C ~ 175°C
JAN1N6627US	Microsemi Corporation	DIODE GEN PURP 440V 1.75A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 440V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	封装: SQ-MELF, E	库存2,768	440V	1.75A	1.35V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 440V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JAN1N6627	Microsemi Corporation	DIODE GEN PURP 440V 1.75A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 440V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	封装: E, Axial	库存5,312	440V	1.75A	1.35V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 440V	40pF @ 10V, 1MHz	Through Hole	E, Axial	-	-65°C ~ 150°C
JAN1N6626US	Microsemi Corporation	DIODE GEN PURP 220V 1.75A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 220V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	封装: SQ-MELF, E	库存6,720	220V	1.75A	1.35V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 220V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JAN1N6626	Microsemi Corporation	DIODE GEN PURP 220V 1.75A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 220V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	封装: E, Axial	库存3,760	220V	1.75A	1.35V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 220V	40pF @ 10V, 1MHz	Through Hole	E, Axial	-	-65°C ~ 150°C
JAN1N6622	Microsemi Corporation	DIODE GEN PURP 660V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 660V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	封装: A, Axial	库存6,624	660V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 660V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
JAN1N6621	Microsemi Corporation	DIODE GEN PURP 440V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 440V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	封装: A, Axial	库存5,888	440V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 440V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
JAN1N6620	Microsemi Corporation	DIODE GEN PURP 220V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 220V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	封装: A, Axial	库存4,224	220V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 220V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
JAN1N5807	Microsemi Corporation	DIODE GEN PURP 50V 6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: B, Axial	库存5,968	50V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5804US	Microsemi Corporation	DIODE GEN PURP 100V 2.5A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	封装: SQ-MELF, A	库存4,432	100V	2.5A	975mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5621US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	封装: SQ-MELF, A	库存2,064	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5618US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	封装: SQ-MELF, A	库存2,464	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N3645	Microsemi Corporation	DIODE GEN PURP 1.4KV 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: S, Axial Supplier Device Package: S, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: S, Axial	库存3,968	1400V	250mA	5V @ 250mA	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1400V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
CDLL6761	Microsemi Corporation	DIODE SCHOTTKY 100V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-213AB, MELF	库存6,720	100V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
CDLL2810	Microsemi Corporation	DIODE SCHOTTKY 20V 75MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 75mA Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100nA @ 15V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-213AA	库存4,208	20V	75mA	1V @ 35mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 15V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
CDLL1A60	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -	封装: DO-213AB, MELF	库存6,576	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	0.9pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-
CDLL1A50	Microsemi Corporation	DIODE SCHOTTKY 50V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -	封装: DO-213AB, MELF	库存4,560	50V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	0.9pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-
CDLL0.5A40	Microsemi Corporation	DIODE SCHOTTKY 40V 500MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 40V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-213AA	库存6,848	40V	500mA	650mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 40V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.5A30	Microsemi Corporation	DIODE SCHOTTKY 30V 500MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-213AA	库存4,672	30V	500mA	650mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.5A20	Microsemi Corporation	DIODE SCHOTTKY 20V 500MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 20V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-213AA	库存2,000	20V	500mA	650mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.2A40	Microsemi Corporation	DIODE SCHOTTKY 40V 200MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-213AA	库存2,992	40V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.2A30	Microsemi Corporation	DIODE SCHOTTKY 30V 200MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-213AA	库存3,840	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
CDLL0.2A20	Microsemi Corporation	DIODE SCHOTTKY 20V 200MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 20V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-213AA	库存3,280	20V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 20V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
JANTX1N3890R	Microsemi Corporation	DIODE GEN PURP 100V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 115pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AA, DO-4, Stud	库存3,776	100V	12A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 100V	115pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
HS243100R	Microsemi Corporation	DIODE MODULE 100V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 100V Capacitance @ Vr, F: 6400pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封装: HALF-PAK	库存7,088	100V	240A	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 100V	6400pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
SDM30004R	Microsemi Corporation	DIODE MODULE 400V 300A DIE Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -	封装: Die	库存4,704	400V	300A	1.1V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	75µA @ 400V	-	Chassis Mount	Die	Die	-
HU20260R	Microsemi Corporation	DIODE MODULE 600V 200A HALF-PAK Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封装: HALF-PAK	库存6,096	600V	200A	1.35V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	50µA @ 600V	-	Chassis Mount	HALF-PAK	HALF-PAK	-
HU10260R	Microsemi Corporation	DIODE MODULE 600V 100A HALF-PAK Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 275pF @ 10V, 1Mhz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封装: HALF-PAK	库存2,384	600V	100A	1.35V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	50µA @ 600V	275pF @ 10V, 1Mhz	Chassis Mount	HALF-PAK	HALF-PAK	-
HS247180R	Microsemi Corporation	DIODE MODULE 180V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 180V Capacitance @ Vr, F: 6000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封装: HALF-PAK	库存7,632	180V	240A	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 180V	6000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-

JAN1N6629

Microsemi Corporation

DIODE GEN PURP 880V 1.4A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 880V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: E, Axial

库存5,520

880V

1.4A

1.4V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

2µA @ 800V

-

Through Hole

E, Axial

-

-65°C ~ 175°C

JAN1N6628

Microsemi Corporation

DIODE GEN PURP 660V 1.75A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: E, Axial

库存3,936

660V

1.75A

1.35V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 600V

-

Through Hole

E, Axial

-

-65°C ~ 175°C

JAN1N6627US

Microsemi Corporation

DIODE GEN PURP 440V 1.75A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 440V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

封装: SQ-MELF, E

库存2,768

440V

1.75A

1.35V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 440V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

JAN1N6627

Microsemi Corporation

DIODE GEN PURP 440V 1.75A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 440V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

封装: E, Axial

库存5,312

440V

1.75A

1.35V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 440V

40pF @ 10V, 1MHz

Through Hole

E, Axial

-

-65°C ~ 150°C

JAN1N6626US

Microsemi Corporation

DIODE GEN PURP 220V 1.75A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 220V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

封装: SQ-MELF, E

库存6,720

220V

1.75A

1.35V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 220V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

JAN1N6626

Microsemi Corporation

DIODE GEN PURP 220V 1.75A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 220V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

封装: E, Axial

库存3,760

220V

1.75A

1.35V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 220V

40pF @ 10V, 1MHz

Through Hole

E, Axial

-

-65°C ~ 150°C

JAN1N6622

Microsemi Corporation

DIODE GEN PURP 660V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 660V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

封装: A, Axial

库存6,624

660V

2A

1.6V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 660V

10pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 150°C

JAN1N6621

Microsemi Corporation

DIODE GEN PURP 440V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 440V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

封装: A, Axial

库存5,888

440V

2A

1.6V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 440V

10pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 150°C

JAN1N6620

Microsemi Corporation

DIODE GEN PURP 220V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 220V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

封装: A, Axial

库存4,224

220V

2A

1.6V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 220V

10pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 150°C

JAN1N5807

Microsemi Corporation

DIODE GEN PURP 50V 6A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: B, Axial

库存5,968

50V

6A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 50V

60pF @ 10V, 1MHz

Through Hole

B, Axial

-

-65°C ~ 175°C

JAN1N5804US

Microsemi Corporation

DIODE GEN PURP 100V 2.5A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

封装: SQ-MELF, A

库存4,432

100V

2.5A

975mV @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

JAN1N5621US

Microsemi Corporation

DIODE GEN PURP 800V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

封装: SQ-MELF, A

库存2,064

800V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

500nA @ 800V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

JAN1N5618US

Microsemi Corporation

DIODE GEN PURP 600V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

封装: SQ-MELF, A

库存2,464

600V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

JAN1N3645

Microsemi Corporation

DIODE GEN PURP 1.4KV 250MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: S, Axial
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: S, Axial

库存3,968

1400V

250mA

5V @ 250mA

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1400V

-

Through Hole

S, Axial

-65°C ~ 175°C

CDLL6761

Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-213AB, MELF

库存6,720

100V

1A

690mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-213AB, MELF

DO-213AB

-55°C ~ 125°C

CDLL2810

Microsemi Corporation

DIODE SCHOTTKY 20V 75MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 75mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100nA @ 15V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-213AA

库存4,208

20V

75mA

1V @ 35mA

Small Signal =< 200mA (Io), Any Speed

-

100nA @ 15V

2pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 150°C

CDLL1A60

Microsemi Corporation

DIODE SCHOTTKY 60V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -

封装: DO-213AB, MELF

库存6,576

60V

1A

690mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

0.9pF @ 5V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-

CDLL1A50

Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -

封装: DO-213AB, MELF

库存4,560

50V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

0.9pF @ 5V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-

CDLL0.5A40

Microsemi Corporation

DIODE SCHOTTKY 40V 500MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 40V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-213AA

库存6,848

40V

500mA

650mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 40V

50pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 125°C

CDLL0.5A30

Microsemi Corporation

DIODE SCHOTTKY 30V 500MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 30V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-213AA

库存4,672

30V

500mA

650mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 30V

50pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 125°C

CDLL0.5A20

Microsemi Corporation

DIODE SCHOTTKY 20V 500MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 20V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-213AA

库存2,000

20V

500mA

650mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 20V

50pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 125°C

CDLL0.2A40

Microsemi Corporation

DIODE SCHOTTKY 40V 200MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 40V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-213AA

库存2,992

40V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 40V

50pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 125°C

CDLL0.2A30

Microsemi Corporation

DIODE SCHOTTKY 30V 200MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-213AA

库存3,840

30V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 30V

50pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 125°C

CDLL0.2A20

Microsemi Corporation

DIODE SCHOTTKY 20V 200MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 20V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-213AA

库存3,280

20V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 20V

50pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 125°C

JANTX1N3890R

Microsemi Corporation

DIODE GEN PURP 100V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AA, DO-4, Stud

库存3,776

100V

12A

1.5V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 100V

115pF @ 10V, 1MHz

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C

HS243100R

Microsemi Corporation

DIODE MODULE 100V 240A HALF-PAK

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8mA @ 100V
Capacitance @ Vr, F: 6400pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封装: HALF-PAK

库存7,088

100V

240A

860mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

8mA @ 100V

6400pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

-

SDM30004R

Microsemi Corporation

DIODE MODULE 400V 300A DIE

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -

封装: Die

库存4,704

400V

300A

1.1V @ 300A

Standard Recovery >500ns, > 200mA (Io)

-

75µA @ 400V

-

Chassis Mount

Die

-

HU20260R

Microsemi Corporation

DIODE MODULE 600V 200A HALF-PAK

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封装: HALF-PAK

库存6,096

600V

200A

1.35V @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

130ns

50µA @ 600V

-

Chassis Mount

HALF-PAK

-

HU10260R

Microsemi Corporation

DIODE MODULE 600V 100A HALF-PAK

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封装: HALF-PAK

库存2,384

600V

100A

1.35V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

90ns

50µA @ 600V

275pF @ 10V, 1Mhz

Chassis Mount

HALF-PAK

-

HS247180R

Microsemi Corporation

DIODE MODULE 180V 240A HALF-PAK

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8mA @ 180V
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封装: HALF-PAK

库存7,632

180V

240A

860mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

8mA @ 180V

6000pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

-