Infineon Technologies 产品

IRG4PC30K

Infineon Technologies

IGBT 600V 28A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 58A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
• Power - Max: 100W
• Switching Energy: 360µJ (on), 510µJ (off)
• Input Type: Standard
• Gate Charge: 67nC
• Td (on/off) @ 25°C: 26ns/130ns
• Test Condition: 480V, 16A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IHW20N120R5XKSA1

Infineon Technologies

IGBT 1200V 40A 288W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
• Power - Max: 288W
• Switching Energy: 750µJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: -/260ns
• Test Condition: 600V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

IPI60R250CPAKSA1

Infineon Technologies

MOSFET N-CH 650V 12A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRL7766M2TR

Infineon Technologies

MOSFET N-CH 100V 10A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? M4
• Package / Case: DirectFET? Isometric M4

封装: DirectFET? Isometric M4

IRFI7440GPBF

Infineon Technologies

MOSFET N-CH 40V 95A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4549pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 57A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

IRFB41N15DPBF

Infineon Technologies

MOSFET N-CH 150V 41A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

IPA80R650CEXKSA2

Infineon Technologies

MOSFET N-CH 800V TO-220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 470µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Supplier Device Package: TO-220-3F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

IPW80R280P7XKSA1

Infineon Technologies

MOSFET N-CH 800V 17A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 360µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 101W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

封装: TO-247-3

PTFB082817FHV1S250XTMA1

Infineon Technologies

IC FET RF LDMOS H-34288

• Transistor Type: LDMOS
• Frequency: 821MHz
• Gain: 19.3dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 2.15A
• Power - Output: 60W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-34288-2

封装: 2-Flatpack, Fin Leads, Flanged

IRF7317TRPBF

Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
• Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

IR3865MTRPBF

Infineon Technologies

IC REG BUCK ADJ 10A SYNC PQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.5V
• Voltage - Output (Max): 12V
• Current - Output: 10A
• Frequency - Switching: Up to 750kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-PowerVQFN
• Supplier Device Package: 17-PowerQFN (4x5)

封装: 17-PowerVQFN

IPS52GB

Infineon Technologies

IC MOSFET POWER SWITCH TO220

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BTS52362GSXUMA1

Infineon Technologies

IC PWR SWITCH HISIDE PGDSO-14-32

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.2A
• Rds On (Typ): 40 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

封装: 14-SOIC (0.154", 3.90mm Width)

IR2112-2

Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm), 12 Leads
• Supplier Device Package: 14-PDIP

封装: 14-DIP (0.300", 7.62mm), 12 Leads

BTM7811KAUMA1

Infineon Technologies

IC BRIDGE DRIVER PAR TO263-15

• Output Configuration: Half Bridge (2)
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 14 mOhm LS, 26 mOhm HS
• Current - Output / Channel: -
• Current - Peak Output: 42A
• Voltage - Supply: 1.8 V ~ 42 V
• Voltage - Load: 1.8 V ~ 42 V
• Operating Temperature: -40°C ~ 110°C (TJ)
• Features: Status Flag
• Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: TO-263-18 (15 Leads + 3 Tabs)
• Supplier Device Package: PG-TO263-15

封装: TO-263-18 (15 Leads + 3 Tabs)

ICE3AR2280JZXKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Flyback
• Voltage - Start Up: 17V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
• Duty Cycle: 75%
• Frequency - Switching: 100kHz
• Power (Watts): 43W
• Fault Protection: Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7
• Mounting Type: Through Hole

封装: 8-DIP (0.300", 7.62mm), 7 Leads

BGT70E6327XTSA1

Infineon Technologies

IC MMIC 119WFWLB

• Type: -
• RF Family/Standard: -
• Protocol: -
• Modulation: -
• Frequency: -
• Data Rate (Max): -
• Power - Output: -
• Sensitivity: -
• Memory Size: -
• Serial Interfaces: -
• GPIO: -
• Voltage - Supply: -
• Current - Receiving: -
• Current - Transmitting: -
• Operating Temperature: -
• Package / Case: -

封装: -

TLE9272QXXUMA1

Infineon Technologies

BODY SYSTEM ICS

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

TDA21325XUMA1

Infineon Technologies

IC CONTROLLER

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

CY8C4147AZA-S465T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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2EDN8533FXTMA1

Infineon Technologies

DRIVER IC PG-DSO-8

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5V ~ 20V
• Logic Voltage - VIL, VIH: 1.4V, 1.9V
• Current - Peak Output (Source, Sink): 5A, 5A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 8.6ns, 6ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封装: -

S25HL01GTDPMHA013

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

封装: -

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2ED2734S01GXTMA1

Infineon Technologies

160 V HIGH SIDE, LOW SIDE SOI GA

• Driven Configuration: High-Side and Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 7V ~ 18V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 2A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 160 V
• Rise / Fall Time (Typ): 25ns, 15ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-VFDFN Exposed Pad
• Supplier Device Package: PG-VSON-10-5

封装: -

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CY27410LTXI-025

Infineon Technologies

INFINEON

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CY8C4126AZS-M443T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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IPB029N06NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 2.9mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

IPW60R090CFD7XKSA1

Infineon Technologies

MOSFET N-CH 600V 25A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 570µA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

封装: -

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PXF4333EV1-1

Infineon Technologies

ABM 3G ATM BUFFER MANAGER

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TLE9852QXXUMA1

Infineon Technologies

IC MCU 32BIT 48KB FLASH 48VQFN

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: LINbus, SSC, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number of I/O: 10
• Program Memory Size: 48KB (48K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 4K x 8
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 3V ~ 28V
• Data Converters: A/D 9x8b, 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31

封装: -

CYPD4236-40LQXQT

Infineon Technologies

CCG4

• Applications: USB Type C
• Core Processor: ARM® Cortex®-M0
• Program Memory Type: FLASH (128kB)
• Controller Series: -
• RAM Size: 8K x 8
• Interface: I2C, SPI, UART/USART, USB
• Number of I/O: 25
• Voltage - Supply: 2.7V ~ 5.5V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封装: -