页 552 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  552/567
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hot IRGP4063D1-EPBF
Infineon Technologies

IGBT 600V 100A 330W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 192A
  • Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 1.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存103,464
hot IRL1404ZLPBF
Infineon Technologies

MOSFET N-CH 40V 75A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存15,396
hot IRF7702TR
Infineon Technologies

MOSFET P-CH 12V 8A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
封装: 8-TSSOP (0.173", 4.40mm Width)
库存5,360
IPI70N12S311AKSA1
Infineon Technologies

MOSFET N-CHANNEL_100+

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存4,480
BSC027N06LS5ATMA1
Infineon Technologies

DIFFERENTIATED MOSFETS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存7,760
IPD050N03LGATMA1
Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,104
BSC018N04LSGATMA1
Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存52,626
IPZ65R045C7XKSA1
Infineon Technologies

MOSFET N-CH 650V 46A TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.25mA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247
  • Package / Case: TO-247-4
封装: TO-247-4
库存18,516
BCR 164L3 E6327
Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 160MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封装: SC-101, SOT-883
库存4,720
BAS3010B03WE6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 1A SOD323-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 30V
  • Capacitance @ Vr, F: 40pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
  • Operating Temperature - Junction: -65°C ~ 125°C
封装: SC-76, SOD-323
库存44,532
IRU1015-33CMTR
Infineon Technologies

IC REG LINEAR 3.3V 1.5A TO263

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.3V @ 1.5A
  • Current - Output: 1.5A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Supplier Device Package: TO-263
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
库存5,360
hot IRU1208CS
Infineon Technologies

IC REG LINEAR POS ADJ 1A 8SOIC

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 12V
  • Voltage - Output (Min/Fixed): 1.24V
  • Voltage - Output (Max): 11.35V
  • Voltage Dropout (Max): 0.65V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 3mA ~ 50mA
  • PSRR: -
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,804
IFX1117MEVHTMA1
Infineon Technologies

IC REG LIN POS ADJ 1A SOT223-4

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 15V
  • Voltage - Output (Min/Fixed): 1.25V
  • Voltage - Output (Max): 13.6V
  • Voltage Dropout (Max): 1.4V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 5mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
封装: TO-261-4, TO-261AA
库存7,744
IP2003PBF
Infineon Technologies

IC REG BUCK ADJ 40A SYNC LGA

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 3V
  • Voltage - Input (Max): 13.2V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 3.3V
  • Current - Output: 40A
  • Frequency - Switching: 300kHz ~ 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Power Block (LGA)
  • Supplier Device Package: LGA (11x11)
封装: Power Block (LGA)
库存7,184
IPS521STRL
Infineon Technologies

IC PWR SWITCH N-CHAN 1:1 D2PAK-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5.5 V ~ 35 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.9A
  • Rds On (Typ): 55 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: D2Pak (SMD-220 5-Lead)
封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
库存4,848
IR4426S
Infineon Technologies

IC DRIVER DUAL LOW SIDE 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 6 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 2.3A, 3.3A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,800
AT8993-A2-T-1
Infineon Technologies

IC SWITCH PHY 100-MQFP

  • Protocol: -
  • Function: -
  • Interface: -
  • Standards: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Operating Temperature: -
  • Package / Case: 100-BQFP
  • Supplier Device Package: P-MQFP-100
封装: 100-BQFP
库存7,632
ADM6995LCX-AC-T-1
Infineon Technologies

IC ETHERNET SW CTRLR 128QFP

  • Protocol: -
  • Function: -
  • Interface: -
  • Standards: -
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Current - Supply: -
  • Operating Temperature: 0°C ~ 115°C
  • Package / Case: 128-BFQFP
  • Supplier Device Package: PG-BFQFP-128
封装: 128-BFQFP
库存4,896
TDA5102-TDA5212_915_5
Infineon Technologies

KIT SAMPLE FSK TX/RX 915MHZ

  • Type: Transmitter, Receiver
  • Frequency: 915MHz
  • For Use With/Related Products: TDA5102, TDA5212
  • Supplied Contents: 2 Boards
封装: -
库存7,866
C164SL6RMCAHXUMA4
Infineon Technologies

IC MCU 80MQFP

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,616
IGC36T120T8LX1SA1
Infineon Technologies

IGBT 1200V 35A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 35A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
S70KS1283GABHI020
Infineon Technologies

IC PSRAM 128MBIT SPI/OCTL 24FBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
封装: -
Request a Quote
IPB339N20NM6ATMA1
Infineon Technologies

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
IPF042N10NF2SATMA1
Infineon Technologies

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 93µA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
封装: -
库存843
IMZA65R048M1HXKSA1
Infineon Technologies

MOSFET 650V NCH SIC TRENCH

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-3
  • Package / Case: TO-247-4
封装: -
库存1,695
CY9BF524KPMC-G-MNE2
Infineon Technologies

IC MCU 32BIT 288KB FLASH 48LQFP

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 72MHz
  • Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 35
  • Program Memory Size: 288KB (288K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 14x12b SAR; D/A 2x10b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LQFP
  • Supplier Device Package: 48-LQFP (7x7)
封装: -
库存7,500
IGO60R070D1AUMA2
Infineon Technologies

GAN HV

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-20-85
  • Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
封装: -
库存2,400
IGC99T120T8RQX1SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
PEB2260NV3-0
Infineon Technologies

SICOFI SIGNAL PROCESSING CODEC F

  • Type: -
  • Data Interface: -
  • Resolution (Bits): -
  • Number of ADCs / DACs: -
  • Sigma Delta: -
  • S/N Ratio, ADCs / DACs (db) Typ: -
  • Dynamic Range, ADCs / DACs (db) Typ: -
  • Voltage - Supply, Analog: -
  • Voltage - Supply, Digital: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
DF8MR12W1M1HFB67BPSA1
Infineon Technologies

SIC 2N-CH 1200V 45A AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 45A
  • Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
封装: -
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