Infineon Technologies 产品

IRGP4269D-EPBF

Infineon Technologies

IGBT 600V TO247 COPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRG4IBC20UDPBF

Infineon Technologies

IGBT 600V 11.4A 34W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11.4A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Power - Max: 34W
• Switching Energy: 160µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 39ns/93ns
• Test Condition: 480V, 6.5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

封装: TO-220-3 Full Pack

IRF3708L

Infineon Technologies

MOSFET N-CH 30V 62A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRFS8407-7TRL

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7437pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 231W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

IPB180N04S4L01ATMA1

Infineon Technologies

MOSFET N-CH TO263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 140µA
• Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19100pF @ 25V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 188W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-3
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

IPI147N12N3GAKSA1

Infineon Technologies

MOSFET N-CH 120V 56A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 61µA
• Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 60V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 107W (Tc)
• Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 56A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

BSC046N02KS G

Infineon Technologies

MOSFET N-CH 20V 80A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 27.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IPD30N06S4L23ATMA2

Infineon Technologies

MOSFET N-CH 60V 30A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP65R074C6XKSA1

Infineon Technologies

MOSFET N-CH 650V 57.7A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 57.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.4mA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 480.8W (Tc)
• Rds On (Max) @ Id, Vgs: 74 mOhm @ 13.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

IRFS3107TRLPBF

Infineon Technologies

MOSFET N-CH 75V 195A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSC036NE7NS3GATMA1

Infineon Technologies

MOSFET N-CH 75V 100A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.8V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 63.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 37.5V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

BCR 192 B6327

Infineon Technologies

TRANS PREBIAS PNP 200MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

IPS521G

Infineon Technologies

IC MOSFET HS PWR SW 5A 8-SOIC

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 35 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.6A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

TLE6281GXUMA1

Infineon Technologies

IC MOTOR CONTROLLER 20DSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (2)
• Interface: PWM
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: -
• Voltage - Supply: 7.5 V ~ 60 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-20

封装: 20-SOIC (0.295", 7.50mm Width)

AUIRS2191S

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 3.5A, 3.5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 15ns, 15ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

C161KLM3VHAFXUMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 80MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 63
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 1K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 80-QFP
• Supplier Device Package: 80-MQFP (14x14)

封装: 80-QFP

TLE49762KHTSA1

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SC59

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: 3 V ~ 18 V
• Current - Supply (Max): 17mA
• Current - Output (Max): -
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

封装: TO-236-3, SC-59, SOT-23-3

BGM17LBA15E6327XTSA1

Infineon Technologies

MULTI CHIP MODULES

• RF Family/Standard: -
• Protocol: -
• Modulation: -
• Frequency: -
• Data Rate: -
• Power - Output: -
• Sensitivity: -
• Serial Interfaces: -
• Antenna Type: -
• Memory Size: -
• Voltage - Supply: -
• Current - Receiving: -
• Current - Transmitting: -
• Mounting Type: -
• Operating Temperature: -
• Package / Case: -

封装: -

PX8897CDQG

Infineon Technologies

IC REGULATOR PG-VQFN-48-27

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

CHL8214-05CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IM393S6EXKLA1

Infineon Technologies

POWER MODULE 600V 6A MDIP30

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 6 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads

封装: -

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PXB4220EV3-3

Infineon Technologies

INTERWORKING ELEMENT FOR 8 E1/T1

• Data Format: -
• Baud Rates: -
• Voltage - Supply: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CY8C4146AZI-S453

Infineon Technologies

IC MCU 32BIT 64KB FLASH 48TQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit Single-Core
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-TQFP (7x7)

封装: -

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IKW25N120T2FKSA1

Infineon Technologies

IGBT TRENCH 1200V 50A TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
• Power - Max: 349 W
• Switching Energy: 2.9mJ
• Input Type: Standard
• Gate Charge: 120 nC
• Td (on/off) @ 25°C: 27ns/265ns
• Test Condition: 600V, 25A, 16.4Ohm, 15V
• Reverse Recovery Time (trr): 195 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

封装: -

TC277TP64F200NDCKXUMA3

Infineon Technologies

IC MCU 32BIT 4MB FLASH 292LFBGA

• Core Processor: TriCore™
• Core Size: 32-Bit Tri-Core
• Speed: 200MHz
• Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, POR, WDT
• Number of I/O: 169
• Program Memory Size: 4MB (4M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 64K x 8
• RAM Size: 472K x 8
• Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
• Data Converters: A/D 60x12b SAR, Sigma-Delta
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 292-LFBGA
• Supplier Device Package: PG-LFBGA-292-6

封装: -

IRF7821TRPBF-1

Infineon Technologies

MOSFET N-CH 30V 13.6A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 155°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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CY8C4149LDSS543XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

封装: -

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IPP65R110CFD7XKSA1

Infineon Technologies

HIGH POWER_NEW

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 480µA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

封装: -

CY9AF111NAPMC-GNE2

Infineon Technologies

IC MCU 32BIT 64KB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

封装: -

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BF999E6812HTSA1

Infineon Technologies

RF MOSFET 10V SOT23

• Transistor Type: MOSFET (Metal Oxide)
• Frequency: 300MHz
• Gain: 27dB
• Voltage - Test: 10 V
• Current Rating: 16mA
• Noise Figure: 2.1dB
• Current - Test: 10 mA
• Power - Output: -
• Voltage - Rated: 20 V
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23

封装: -

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