图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
FET N-CHANNEL
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 130A (Tc) | 6V, 10V | 3.7V @ 150µA | 200 nC @ 10 V | 6530 pF @ 25 V | ±20V | - | 96W (Tc) | 2.9mOhm @ 80A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-263
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 2V @ 125µA | 104 nC @ 10 V | 3500 pF @ 30 V | - | - | - | 8.2mOhm @ 80A, 10V | - | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW
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封装: - |
库存600 |
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MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 4.5V @ 630µA | 53 nC @ 10 V | 2513 pF @ 400 V | ±20V | - | 127W (Tc) | 90mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 14A 4VSON
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封装: - |
库存8,919 |
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MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V | 4.5V @ 300µA | 28 nC @ 10 V | 1199 pF @ 400 V | ±20V | - | 85W (Tc) | 185mOhm @ 6A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 30V 13.3A 8SO
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 13.3A (Ta) | 4.5V | 1V @ 250µA | 62 nC @ 5 V | 3780 pF @ 16 V | ±12V | - | 2.5W (Ta) | 9mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET 55V 17A DIE
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 17A | 10V | - | - | - | - | - | - | 75mOhm @ 17A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4V @ 250µA | 154 nC @ 10 V | 10300 pF @ 25 V | ±20V | - | 125W (Tc) | 4.7mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
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封装: - |
库存2,769 |
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SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 5.7V @ 5mA | 28 nC @ 18 V | 930 pF @ 400 V | +23V, -5V | - | 161W (Tc) | 74mOhm @ 16.7A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
DIRECTFET PLUS POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 25 V | 19A (Ta), 74A (Tc) | - | 2.1V @ 35µA | 17 nC @ 4.5 V | 1590 pF @ 13 V | ±16V | - | 2.1W (Ta), 32W (Tc) | 3.7mOhm @ 19A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 700V 6.5A TO251-3
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封装: - |
库存780 |
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MOSFET (Metal Oxide) | 700 V | 6.5A (Tc) | 10V | 3.5V @ 70µA | 8.3 nC @ 400 V | 306 pF @ 400 V | ±16V | - | 34.7W (Tc) | 750mOhm @ 1.4A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
GAN N-CH 400V 31A HSOF-8-3
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封装: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 400 V | 31A (Tc) | - | 1.6V @ 2.6mA | - | 382 pF @ 320 V | ±10V | - | 125W (Tc) | - | 0°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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Infineon Technologies |
MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 19A 8HSOF
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封装: - |
库存12,000 |
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MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 4.5V @ 300µA | 28 nC @ 10 V | 1199 pF @ 400 V | ±20V | - | 116W (Tc) | 145mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET_)40V 60V)
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封装: - |
库存6,000 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 80V 40A/396A HDSOP
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封装: - |
库存12,384 |
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MOSFET (Metal Oxide) | 80 V | 40A (Ta), 396A (Tc) | 6V, 10V | 3.8V @ 275µA | 219 nC @ 10 V | 16000 pF @ 40 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO262
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 4V @ 250µA | 240 nC @ 10 V | 6450 pF @ 25 V | ±20V | - | 300W (Tc) | 2.3mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
MOSFET 650V NCH SIC TRENCH
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封装: - |
库存1,695 |
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SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 5.7V @ 6mA | 33 nC @ 18 V | 1118 pF @ 400 V | +23V, -5V | - | 125W (Tc) | 64mOhm @ 20.1A, 18V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 40V 180A HSOF-5-1
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 7V, 10V | 3.4V @ 70µA | 100 nC @ 10 V | 6158 pF @ 25 V | ±20V | - | 125W (Tc) | 1.2mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 800V 1.9A SOT223
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封装: - |
库存40,086 |
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MOSFET (Metal Oxide) | 800 V | 1.9A (Tc) | 10V | 3.5V @ 30µA | 5.8 nC @ 10 V | 120 pF @ 500 V | ±20V | - | 6.1W (Tc) | 3.3Ohm @ 590mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET_(120V 300V)
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 4V @ 240µA | 185 nC @ 10 V | 11570 pF @ 25 V | ±20V | - | 300W (Tc) | 5.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 60V 35A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 10V | 4V @ 1.7mA | 63 nC @ 10 V | 2500 pF @ 30 V | ±20V | - | 125W (Tc) | 38mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 250V 25A TDSON-8-1
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封装: - |
库存39,954 |
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MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | ±20V | - | 125W (Tc) | 60mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 47A HDSOP-10
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封装: - |
库存10,005 |
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MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 4V @ 800µA | 68 nC @ 10 V | 2670 pF @ 400 V | ±20V | - | 278W (Tc) | 50mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MOSFET_(75V 120V(
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 30A (Tc) | 4.5V, 10V | 2.4V @ 29µA | 31 nC @ 10 V | 1976 pF @ 25 V | ±20V | - | 57W (Tc) | 31mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 17A DIE
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 17A | - | - | - | - | - | - | - | - | - | Surface Mount | Die | Die |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 5.5V @ 350µA | 35 nC @ 10 V | 970 pF @ 25 V | ±20V | - | 32W (Tc) | 600mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 8HSOF
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | TOLL | 8-PowerSFN |
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Infineon Technologies |
TRENCH >=100V PG-HSOG-8
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封装: - |
库存48 |
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MOSFET (Metal Oxide) | 200 V | 10.8A (Ta), 108A (Tc) | 10V | 4V @ 267µA | 81 nC @ 10 V | 7000 pF @ 100 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 11.1mOhm @ 96A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |