图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2V @ 85µA | 68 nC @ 10 V | 2530 pF @ 25 V | ±20V | - | 136W (Tc) | 6.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO263-3
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封装: - |
库存15,393 |
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MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 3.5V @ 790µA | 52 nC @ 10 V | 2000 pF @ 100 V | ±20V | - | 192W (Tc) | 165mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
SIC_DISCRETE
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封装: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 22A (Tc) | 18V, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | 458 pF @ 800 V | +23V, -5V | - | 133W (Tc) | 150mOhm @ 7A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-11 | TO-247-4 |
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Infineon Technologies |
TRENCH <= 40V
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封装: - |
库存2,283 |
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MOSFET (Metal Oxide) | 40 V | 30A (Ta), 122A (Tc) | 6V, 10V | 3.4V @ 81µA | 102 nC @ 10 V | 4800 pF @ 20 V | ±20V | - | 3.8W (Ta), 150W (Tc) | 2.35mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO220
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 4.5V @ 730µA | 68 nC @ 10 V | 1850 pF @ 100 V | ±20V | - | 34W (Tc) | 190mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-111 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO220
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封装: - |
库存429 |
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MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 4.5V @ 700µA | 68 nC @ 10 V | 1850 pF @ 100 V | ±20V | - | 34W (Tc) | 190mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET_(75V 120V( PG-HSOF-5
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封装: - |
库存4,710 |
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MOSFET (Metal Oxide) | 80 V | 180A (Tj) | 6V, 10V | 3.8V @ 100µA | 87 nC @ 10 V | 5980 pF @ 40 V | ±20V | - | 179W (Tc) | 2.6mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-4 | 5-PowerSFN |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS
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封装: - |
库存1,176 |
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MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | 4975 pF @ 400 V | ±20V | - | 357W (Tc) | 40mOhm @ 24.8A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Infineon Technologies |
MOSFET N-CH 950V 2A SOT223
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封装: - |
库存25,914 |
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MOSFET (Metal Oxide) | 950 V | 2A (Tc) | 10V | 3.5V @ 40µA | 6 nC @ 10 V | 196 pF @ 400 V | ±20V | - | 6W (Tc) | 3.7Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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Infineon Technologies |
SIC_DISCRETE
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封装: - |
库存111 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 38A (Tc) | 18V, 20V | 5.1V @ 4.3mA | 32 nC @ 20 V | 880 pF @ 800 V | +23V, -5V | - | 197W (Tc) | 75mOhm @ 13A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-11 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 100V 30A 8TSDSON-32
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封装: - |
库存13,170 |
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MOSFET (Metal Oxide) | 100 V | 30A (Tc) | 4.5V, 10V | 2.2V @ 15µA | 14 nC @ 10 V | 832 pF @ 50 V | ±20V | - | 45.5W (Tc) | 24mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
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Infineon Technologies |
SICFET N-CH 1.2KV 56A TO247-3
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封装: - |
库存5,061 |
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SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | 15V, 18V | 5.7V @ 10mA | 63 nC @ 18 V | 2120 pF @ 800 V | +23V, -7V | - | 227W (Tc) | 40mOhm @ 25A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 41A (Tc) | - | 4.5V @ 250µA | 107 nC @ 10 V | 2260 pF @ 25 V | - | - | - | 45mOhm @ 25A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V PG-TO247-3
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封装: - |
库存1,188 |
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MOSFET (Metal Oxide) | 200 V | 130A (Tc) | 10V | 5V @ 250µA | 241 nC @ 10 V | 10720 pF @ 50 V | ±30V | - | 520W | 9.7mOhm @ 81A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A D2PAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 23 nC @ 10 V | 2400 pF @ 15 V | ±20V | - | 56W (Tc) | 6.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3
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封装: - |
库存5,253 |
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MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4V @ 250µA | 154 nC @ 10 V | 10300 pF @ 25 V | ±20V | - | 125W (Tc) | 4.7mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 39A/58A TDSON
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封装: - |
库存75,060 |
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MOSFET (Metal Oxide) | 25 V | 39A (Ta), 58A (Tc) | 4.5V, 10V | 2V @ 250µA | 10.4 nC @ 10 V | 760 pF @ 12 V | ±20V | - | 2.5W (Ta), 28W (Tc) | 5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 18.5A TO220-3
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封装: - |
库存2,952 |
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MOSFET (Metal Oxide) | 500 V | 18.5A (Tc) | 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | 1137 pF @ 100 V | ±20V | - | 127W (Tc) | 190mOhm @ 6.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
TRENCH <= 40V
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封装: - |
库存3,618 |
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MOSFET (Metal Oxide) | 40 V | 46A (Ta), 289A (Tc) | 6V, 10V | 3.4V @ 189µA | 239 nC @ 10 V | 11300 pF @ 20 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-U02 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET P-CH 12V 16A 8SO
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 16A (Ta) | - | 900mV @ 250µA | 91 nC @ 4.5 V | 8676 pF @ 10 V | ±8V | - | 2.5W (Ta) | 7mOhm @ 16A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 13A 8PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 13A (Ta), 100A (Tc) | - | 2.5V @ 150µA | 94 nC @ 10 V | 5185 pF @ 50 V | - | - | - | 9mOhm @ 50A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 7.2A TO251-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 7.2A (Tc) | 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | 328 pF @ 100 V | ±20V | - | 68W (Tc) | 1Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-342 | TO-251-3 Stub Leads, IPAK |
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Infineon Technologies |
MOSFET N-CH 600V 27A 4VSON
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封装: - |
库存16,593 |
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MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 4V @ 410µA | 36 nC @ 10 V | 1544 pF @ 400 V | ±20V | - | 111W (Tc) | 125mOhm @ 8.2A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 40A PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 40A (Ta), 100A (Tc) | - | 2.35V @ 150µA | 120 nC @ 10 V | 7200 pF @ 15 V | - | - | - | 1.4mOhm @ 50A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 14A 5X6 PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 17A (Ta), 56A (Tc) | - | 2.35V @ 25µA | 20 nC @ 10 V | 1450 pF @ 25 V | - | - | - | 6.6mOhm @ 20A, 10V | - | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
150V, N-CH MOSFET, LOGIC LEVEL,
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封装: - |
库存819 |
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MOSFET (Metal Oxide) | 150 V | 70A (Tc) | 8V, 10V | 4.6V @ 91µA | 28 nC @ 10 V | 2100 pF @ 75 V | ±20V | - | 125W (Tc) | 11mOhm @ 35A, 10 | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
SICFET N-CH 1.2KV 13A TO247-3
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封装: - |
库存3,834 |
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SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | 15V, 18V | 5.7V @ 1.6mA | 8.5 nC @ 18 V | 289 pF @ 800 V | +23V, -7V | - | 75W (Tc) | 286mOhm @ 4A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 3.6A SOT223
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封装: - |
库存8,880 |
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MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 4.5V @ 40µA | 4.6 nC @ 10 V | 169 pF @ 400 V | ±20V | - | 6W (Tc) | 1.5Ohm @ 700mA, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-3 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 50A D2PAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 4V @ 34µA | 36 nC @ 10 V | 2900 pF @ 30 V | ±20V | - | 71W (Tc) | 9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |