图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 650V 4.5A TO263-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 4.5A (Tc) | 10V | 3.9V @ 200µA | 25 nC @ 10 V | 490 pF @ 25 V | ±20V | - | 50W (Tc) | 950mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO247-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 3.5V @ 1.1mA | 70 nC @ 10 V | 2500 pF @ 100 V | ±20V | - | 208W (Tc) | 125mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO220
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 4V @ 140µA | 13 nC @ 10 V | 555 pF @ 400 V | ±20V | - | 22W (Tc) | 360mOhm @ 2.7A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
GAN HV
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封装: - |
库存6,882 |
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GaNFET (Gallium Nitride) | 600 V | 10A (Tc) | - | 1.6V @ 960µA | - | 157 pF @ 400 V | -10V | - | 62.5W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-LSON-8-1 | 8-LDFN Exposed Pad |
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Infineon Technologies |
GAN N-CH 600V 10A LSON-8
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封装: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 600 V | 10A (Tc) | - | 1.6V @ 960µA | - | 157 pF @ 400 V | -10V | - | 62.5W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-LSON-8-1 | 8-LDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 30V 29A 8VQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 29A (Ta), 100A (Tc) | - | 2.35V @ 100µA | 55 nC @ 10 V | 3635 pF @ 25 V | - | - | - | 2.5mOhm @ 50A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存3,003 |
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MOSFET (Metal Oxide) | 100 V | 12A (Ta), 52A (Tc) | 6V, 10V | 3.8V @ 30µA | 28 nC @ 10 V | 1300 pF @ 50 V | ±20V | - | 3.8W (Ta), 71W (Tc) | 12.9mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 20A HDSOP-10
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封装: - |
库存5,061 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 4V @ 320µA | 27 nC @ 10 V | 1080 pF @ 400 V | ±20V | - | 120W (Tc) | 125mOhm @ 6.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 46A (Tc) | 10V | 5V @ 250µA | 110 nC @ 10 V | 4560 pF @ 25 V | ±30V | - | 330W (Tc) | 46mOhm @ 26A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存2,970 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N CH
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封装: - |
库存531 |
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MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 4.5V @ 470µA | 42 nC @ 10 V | 1752 pF @ 400 V | ±20V | - | 106W (Tc) | 105mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 14A/79A TDSON
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封装: - |
库存5,436 |
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MOSFET (Metal Oxide) | 100 V | 14A (Ta), 79A (Tc) | 4.5V, 10V | 2.3V @ 49µA | 20 nC @ 4.5 V | 2700 pF @ 50 V | ±20V | - | 2.5W (Ta), 83W (Tc) | 7mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO247-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 3.5V @ 430µA | 43 nC @ 10 V | 950 pF @ 100 V | ±20V | - | 104W (Tc) | 280mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
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MOSFET (Metal Oxide) | 150 V | 6.2A (Ta), 35A (Tc) | 10V | 4.9V @ 150µA | 55 nC @ 10 V | 2340 pF @ 25 V | ±20V | - | 2.8W (Ta), 89W (Tc) | 34.5mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 3.5V @ 73µA | 56 nC @ 10 V | 3840 pF @ 40 V | ±20V | - | 136W (Tc) | 7mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 500V 5A TO252
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封装: - |
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MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 13V | 3.5V @ 130µA | 12.4 nC @ 10 V | 280 pF @ 100 V | ±20V | - | 40W (Tc) | 800mOhm @ 1.5A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 700V 10A TO220
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封装: - |
库存3 |
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MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 3.5V @ 120µA | 13.1 nC @ 400 V | 424 pF @ 400 V | ±16V | - | 22.7W (Tc) | 450mOhm @ 2.3A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
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MOSFET (Metal Oxide) | 150 V | 104A (Tc) | 10V | 5V @ 250µA | 120 nC @ 10 V | 5270 pF @ 50 V | ±20V | - | 380W (Tc) | 11mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS PG-TO220-3
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封装: - |
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MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 4.5V @ 820µA | 68 nC @ 10 V | 3288 pF @ 400 V | ±20V | - | 171W (Tc) | 75mOhm @ 16.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET_(75V 120V( PG-HSOF-5
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封装: - |
库存7,542 |
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MOSFET (Metal Oxide) | 100 V | 170A (Tj) | 6V, 10V | 3.8V @ 110µA | 88 nC @ 10 V | 6405 pF @ 50 V | ±20V | - | 197W (Tc) | 3.1mOhm @ 85A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-4 | 5-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 30V 22A/40A 8TSDSON
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封装: - |
库存12,135 |
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MOSFET (Metal Oxide) | 30 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45 nC @ 10 V | 2850 pF @ 15 V | ±20V | - | 2.1W (Ta), 50W (Tc) | 2mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 5.2A 8-SOIC
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封装: - |
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MOSFET (Metal Oxide) | 150 V | 5.2A (Ta) | - | 4V @ 250µA | 54 nC @ 10 V | 1750 pF @ 25 V | - | - | - | 44mOhm @ 3.1A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 4V @ 1mA | - | 530 pF @ 25 V | ±20V | - | 40W (Tc) | 600mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 85A PQFN 5X6
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 85A (Tc) | - | 3.9V @ 100µA | 98 nC @ 10 V | 3174 pF @ 25 V | - | - | - | 3.3mOhm @ 50A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 40V 80A TO263-3
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封装: - |
库存23,196 |
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MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 176 nC @ 10 V | 11570 pF @ 25 V | +5V, -16V | - | 125W (Tc) | 4.7mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 3.8A SC59
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封装: - |
库存81,600 |
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MOSFET (Metal Oxide) | 20 V | 3.8A (Ta) | 2.5V, 4.5V | 1.2V @ 30µA | 8.8 nC @ 4.5 V | 1147 pF @ 10 V | ±12V | - | 500mW (Ta) | 21mOhm @ 3.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC59-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 150V 100A TO263-3
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封装: - |
库存14,058 |
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MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 8V, 10V | 4V @ 270µA | 93 nC @ 10 V | 5470 pF @ 75 V | ±20V | - | 300W (Tc) | 7.2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 24A TO247-3-41
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封装: - |
库存558 |
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MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4.5V @ 630µA | 53 nC @ 10 V | 2513 pF @ 400 V | ±20V | - | 127W (Tc) | 99mOhm @ 12.5A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 550V 23A TO247-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 550 V | 23A (Tc) | 10V | 3.5V @ 930µA | 64 nC @ 10 V | 2540 pF @ 100 V | ±20V | - | 192W (Tc) | 140mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |