图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO220-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28 nC @ 10 V | 710 pF @ 100 V | ±20V | - | 83W (Tc) | 1.2Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO220-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28 nC @ 10 V | 710 pF @ 100 V | ±20V | - | 83W (Tc) | 1.2Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A D2PAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 4.5V @ 340µA | 32 nC @ 10 V | 870 pF @ 100 V | ±20V | - | 83.3W (Tc) | 420mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
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封装: - |
库存14,040 |
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MOSFET (Metal Oxide) | 40 V | 58A (Ta), 610A (Tc) | 6V, 10V | 2.8V @ 1.449mA | 161 nC @ 10 V | 12000 pF @ 20 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.47mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 8A TO220
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封装: - |
库存765 |
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MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 4.5V @ 300µA | 28 nC @ 10 V | 1199 pF @ 400 V | ±20V | - | 26W (Tc) | 170mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_NEW
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封装: - |
Request a Quote |
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- | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 24.3A TO247-3
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封装: - |
库存72 |
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MOSFET (Metal Oxide) | 650 V | 24.3A (Tc) | 10V | 3.9V @ 1.2mA | 135 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 240W (Tc) | 160mOhm @ 15.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET_(20V 40V)
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封装: - |
库存3,000 |
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MOSFET (Metal Oxide) | 40 V | - | 10V | - | 55 nC @ 10 V | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 5.3A/18A TSDSON
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封装: - |
库存71,781 |
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MOSFET (Metal Oxide) | 100 V | 5.3A (Ta), 18A (Tc) | 6V, 10V | 2.7V @ 12µA | 9.1 nC @ 10 V | 640 pF @ 50 V | ±20V | - | 29W (Tc) | 44mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET_(75V 120V( PG-TSDSON-8
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封装: - |
库存15,000 |
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MOSFET (Metal Oxide) | 80 V | 30A (Tj) | 6V, 10V | 3.8V @ 13µA | 12.1 nC @ 10 V | 759 pF @ 40 V | ±20V | - | 41W (Tc) | 18.6mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
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Infineon Technologies |
OPTIMOS 5 POWER MOSFET
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封装: - |
库存4,362 |
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MOSFET (Metal Oxide) | 150 V | 19.4A (Ta), 174A (Tc) | 8V, 10V | 4.6V @ 235µA | 89 nC @ 10 V | 7000 pF @ 75 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 4.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
MOSFET 55V 11A DIE
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 11A | 10V | - | - | - | - | - | - | 175mOhm @ 11A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET N-CH 150V 13A 8TSDSON
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封装: - |
库存41,277 |
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MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 8V, 10V | 4V @ 20µA | 7 nC @ 10 V | 510 pF @ 75 V | ±20V | - | 38W (Tc) | 90mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 209A TO247AC
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 209A (Tc) | 6V, 10V | 3.8V @ 278µA | 555 nC @ 10 V | 25000 pF @ 50 V | ±20V | - | 556W (Tc) | 1.28mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
HIGH POWER_NEW
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
AUTOMOTIVE HEXFET P CHANNEL
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封装: - |
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MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 4V @ 250µA | 35 nC @ 10 V | 620 pF @ 25 V | ±20V | - | 68W (Tc) | 100mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 260A 8HSOF
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封装: - |
库存10,731 |
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MOSFET (Metal Oxide) | 100 V | 260A (Tc) | 6V, 10V | 3.8V @ 210µA | 166 nC @ 10 V | 11830 pF @ 50 V | ±20V | - | 300W (Tc) | 1.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 2.2V @ 11µA | 10 nC @ 4.5 V | 1600 pF @ 30 V | ±20V | - | 36W (Tc) | 23mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS PG-TO263-7
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封装: - |
库存2,424 |
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MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 4.5V @ 490µA | 41 nC @ 10 V | 1950 pF @ 400 V | ±20V | - | 114W (Tc) | 115mOhm @ 9.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-7-11 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 950V 6A SOT223
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封装: - |
库存9,537 |
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MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 3.5V @ 140µA | 15 nC @ 10 V | 478 pF @ 400 V | ±20V | - | 7W (Tc) | 1.2Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 900V 36A TO247-3
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | 6800 pF @ 100 V | ±20V | - | 417W (Tc) | 120mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
SIC DISCRETE
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 40V 120A TO220-3
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封装: - |
库存1,830 |
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MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2.2V @ 340µA | 234 nC @ 10 V | 15000 pF @ 25 V | +5V, -16V | - | 136W (Tc) | 3.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO247-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 4.5V @ 570µA | 51 nC @ 10 V | 2103 pF @ 400 V | ±20V | - | 125W (Tc) | 90mOhm @ 11.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 15A/40A TSDSON
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封装: - |
库存35,766 |
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MOSFET (Metal Oxide) | 40 V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 9.5 nC @ 10 V | 650 pF @ 20 V | ±20V | - | 2.5W (Ta), 38W (Tc) | 6.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHAN D2PAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 4V @ 130µA | 81 nC @ 10 V | 2800 pF @ 30 V | - | - | - | 8.8mOhm @ 80A, 10V | - | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET 800V TDSON-8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 18A/40A TSDSON
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封装: - |
库存8,988 |
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MOSFET (Metal Oxide) | 60 V | 18A (Ta), 40A (Tc) | 6V, 10V | 3.3V @ 36µA | 34 nC @ 10 V | 2500 pF @ 30 V | ±20V | - | 2.1W (Ta), 69W (Tc) | 3.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET 800V TDSON-8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 35A (Tc) | - | 2.35V @ 25µA | 12 nC @ 4.5 V | 1160 pF @ 15 V | - | - | - | 8.7mOhm @ 14A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |