图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO220-FP
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28 nC @ 10 V | 710 pF @ 100 V | ±20V | - | 31W (Tc) | 1.2Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO220
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封装: - |
库存861 |
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MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28 nC @ 10 V | 710 pF @ 100 V | ±20V | - | 31W (Tc) | 1.2Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 41A 4VSON
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封装: - |
库存33,642 |
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MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 4V @ 800µA | 67 nC @ 10 V | 2895 pF @ 400 V | ±20V | - | 201W (Tc) | 65mOhm @ 15.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 100V 22A/150A TDSON
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封装: - |
库存2,646 |
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MOSFET (Metal Oxide) | 100 V | 22A (Ta), 150A (Tc) | 4.5V, 10V | 2.3V @ 92µA | 73 nC @ 10 V | 5190 pF @ 50 V | ±20V | - | 2.5W (Ta), 125W (Tc) | 3.6mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 33A (Tc) | - | 2.35V @ 25µA | 13 nC @ 4.5 V | 1095 pF @ 15 V | - | - | - | 8.7mOhm @ 15A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 21.3A 4VSON
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 21.3A (Tc) | 10V | 4.5V @ 900µA | 86 nC @ 10 V | 2340 pF @ 100 V | ±20V | - | 195W (Tc) | 165mOhm @ 9.3A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 55V 49A D2PAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 49A (Tc) | - | 4V @ 250µA | 63 nC @ 10 V | 1470 pF @ 25 V | - | - | 3.8W (Ta), 94W (Tc) | 17.5mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO263-3
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封装: - |
库存9,024 |
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MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | 2800 pF @ 100 V | ±20V | - | 255W (Tc) | 99mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET
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封装: - |
库存5,445 |
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MOSFET (Metal Oxide) | 80 V | 17A (Ta), 98A (Tc) | 6V, 10V | 3.8V @ 55µA | 54 nC @ 10 V | 2500 pF @ 40 V | ±20V | - | 3W (Ta), 107W (Tc) | 5.5mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
IC MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 18A TO247-3
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封装: - |
库存375 |
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MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 4.5V @ 390µA | 36 nC @ 10 V | 1503 pF @ 400 V | ±20V | - | 92W (Tc) | 125mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
OPTIMOS LOWVOLTAGE POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 13A (Ta), 85A (Tc) | 6V, 10V | 3.8V @ 48µA | 43 nC @ 10 V | 3000 pF @ 50 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WHTFN-9-1 | 9-PowerWDFN |
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Infineon Technologies |
IC MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET 650V NCH SIC TRENCH
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封装: - |
库存1,380 |
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SiCFET (Silicon Carbide) | 650 V | 59A (Tc) | 18V | 5.7V @ 11mA | 63 nC @ 18 V | 2131 pF @ 400 V | +23V, -5V | - | 189W (Tc) | 34mOhm @ 38.3A, 18V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 80V 10A/40A 8TSDSON
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封装: - |
库存157,749 |
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MOSFET (Metal Oxide) | 80 V | 10A (Ta), 40A (Tc) | 6V, 10V | 3.5V @ 33µA | 25 nC @ 10 V | 1700 pF @ 40 V | ±20V | - | 2.1W (Ta), 66W (Tc) | 12.3mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
CONSUMER PG-TO251-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 4.5V @ 180µA | 15.3 nC @ 10 V | 656 pF @ 400 V | ±20V | - | 51W (Tc) | 280mOhm @ 3.6A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 950V 9A TO251-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 3.5V @ 220µA | 23 nC @ 10 V | 712 pF @ 400 V | ±20V | - | 73W (Tc) | 750mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 25A/40A TSDSON
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封装: - |
库存14,688 |
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MOSFET (Metal Oxide) | 30 V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 41 nC @ 10 V | 2600 pF @ 15 V | ±20V | Schottky Diode (Body) | 2.1W (Ta), 69W (Tc) | 2.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 950V 13.3A TO252-3
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封装: - |
库存7,404 |
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MOSFET (Metal Oxide) | 950 V | 13.3A (Tc) | 10V | 3.5V @ 360µA | 43 nC @ 10 V | 1230 pF @ 400 V | ±20V | - | 104W (Tc) | 450mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 3A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 4.5V @ 30µA | 3.8 nC @ 10 V | 134 pF @ 400 V | ±20V | - | 20W (Tc) | 2Ohm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-344 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SMALL SIGNAL N-CHANNEL MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 2V @ 250µA | 40 nC @ 10 V | 3100 pF @ 15 V | ±20V | - | 1.56W (Ta) | 6.5mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET_)40V 60V) PG-TDSON-8
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封装: - |
库存14,640 |
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MOSFET (Metal Oxide) | 60 V | 60A (Tj) | 4.5V, 10V | 2.2V @ 19µA | 22.6 nC @ 10 V | 1655 pF @ 30 V | ±16V | - | 52W (Tc) | 7.3mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 100V 15A TO220-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 2V @ 1.54mA | 62 nC @ 10 V | 1490 pF @ 25 V | ±20V | - | 128W (Tc) | 200mOhm @ 11.3A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
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封装: - |
库存6,000 |
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SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 10A TO251-3
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封装: - |
库存2,496 |
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MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 4.5V @ 140µA | 12.7 nC @ 10 V | 534 pF @ 400 V | ±20V | - | 43W (Tc) | 360mOhm @ 2.9A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
TRENCH <= 40V
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IGBT
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 200V 26A TO220
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封装: - |
库存4,500 |
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MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 10V | 4V @ 89µA | 30 nC @ 10 V | 2300 pF @ 100 V | ±20V | - | 38W (Tc) | 32mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET_(20V 40V)
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封装: - |
库存3,000 |
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MOSFET (Metal Oxide) | 40 V | 275A (Tj) | 4.5V, 10V | 1.8V @ 60µA | 85 nC @ 10 V | 5704 pF @ 20 V | ±16V | - | 129W (Tc) | 0.91mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 20V 2.4A 6-TSOP
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封装: - |
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MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | - | 700mV @ 250µA (Min) | 8.8 nC @ 4.5 V | 210 pF @ 15 V | - | - | - | 200mOhm @ 1.6A, 4.5V | - | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |