图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
POWER FIELD-EFFECT TRANSISTOR, 1
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO220-3-5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
AUTOMOTIVE_COOLMOS
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223-4
|
封装: - |
库存3,861 |
|
MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 4.5V, 10V | 2V @ 270µA | 13.9 nC @ 10 V | 420 pF @ 30 V | ±20V | - | 1.8W (Ta), 5W (Tc) | 250mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8-6
|
封装: - |
库存14,031 |
|
MOSFET (Metal Oxide) | 40 V | 381A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 94 nC @ 4.5 V | 8400 pF @ 20 V | ±20V | - | 188W | 0.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH <= 40V
|
封装: - |
库存29,940 |
|
MOSFET (Metal Oxide) | 15 V | 58A (Ta), 379A (Tc) | 4.5V, 7V | 2V @ 432µA | 55 nC @ 7 V | 6240 pF @ 7.5 V | ±7V | - | 2.1W (Ta), 89W (Tc) | 0.45mOhm @ 30A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TTFN-9-3 | 9-PowerTDFN |
||
Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 42A (Ta), 445A (Tc) | 6V, 10V | 3.3V @ 163µA | 150 nC @ 10 V | 12000 pF @ 30 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
||
Infineon Technologies |
MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 4V @ 85µA | 51 nC @ 10 V | 3670 pF @ 25 V | ±20V | - | 58W (Tc) | 12.6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-4 | TO-247-4 |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存8,550 |
|
MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 4.5V @ 630µA | 53 nC @ 10 V | 2513 pF @ 400 V | ±20V | - | 127W (Tc) | 90mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
封装: - |
库存3,300 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
OPTIMOS LOWVOLTAGE POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 21A (Ta), 132A (Tc) | 6V, 10V | 3.3V @ 50µA | 49 nC @ 10 V | 3800 pF @ 30 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WHTFN-9-1 | 9-PowerWDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 10A/35A 8TSDSON
|
封装: - |
库存86,457 |
|
MOSFET (Metal Oxide) | 30 V | 10A (Ta), 35A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 13 nC @ 10 V | 970 pF @ 15 V | ±20V | - | 2.1W (Ta), 25W (Tc) | 13mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 700V 10A SOT223
|
封装: - |
库存2,232 |
|
MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 3.5V @ 120µA | 13.1 nC @ 10 V | 424 pF @ 400 V | ±16V | - | 7.1W (Tc) | 450mOhm @ 2.3A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 250V 10.9A TDSON-8-5
|
封装: - |
库存20,946 |
|
MOSFET (Metal Oxide) | 250 V | 10.9A (Tc) | 10V | 4V @ 32µA | 11.4 nC @ 10 V | 920 pF @ 100 V | ±20V | - | 62.5W (Tc) | 165mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 250V 25A TO220-3
|
封装: - |
库存1,902 |
|
MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | ±20V | - | 136W (Tc) | 60mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 900V 5.7A TO220-FP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 900 V | 5.7A (Tc) | 10V | 3.5V @ 370µA | 34 nC @ 10 V | 850 pF @ 100 V | ±20V | - | 32W (Tc) | 1Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET P-CH 55V 31A DPAK
|
封装: - |
库存5,199 |
|
MOSFET (Metal Oxide) | 55 V | 31A (Tc) | - | 4V @ 250µA | 63 nC @ 10 V | 1200 pF @ 25 V | - | - | - | 65mOhm @ 16A, 10V | - | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 250V 25A D2PAK
|
封装: - |
库存14,874 |
|
MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | ±20V | - | 136W (Tc) | 60mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 100 V | 26A (Ta), 273A (Tc) | 6V, 10V | 3.8V @ 159µA | 134 nC @ 10 V | 9500 pF @ 50 V | ±20V | - | 3W (Ta), 333W (Tc) | 2.05mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
||
Infineon Technologies |
CONSUMER PG-TO252-3
|
封装: - |
库存1,284 |
|
MOSFET (Metal Oxide) | 600 V | 4.7A (Tc) | 10V | 4.5V @ 50µA | 6 nC @ 10 V | 230 pF @ 400 V | ±20V | - | 26W (Tc) | 1Ohm @ 1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 500V 6.1A TO252-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 6.1A (Tc) | 13V | 3.5V @ 150µA | 15 nC @ 10 V | 342 pF @ 100 V | ±20V | - | 47W (Tc) | 650mOhm @ 1.8A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 40A TSDSON-8-33
|
封装: - |
库存30,855 |
|
MOSFET (Metal Oxide) | 60 V | 40A (Tj) | - | 3.4V @ 29µA | 30.5 nC @ 10 V | 2200 pF @ 30 V | ±20V | - | 71W (Tc) | 5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-33 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 600V 9A 4VSON
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 3.5V @ 340µA | 17 nC @ 10 V | 790 pF @ 100 V | ±20V | - | 83W (Tc) | 385mOhm @ 5.2A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Infineon Technologies |
MOSFET N-CH 60V 100A 5X6 PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 20A (Ta), 100A (Tc) | - | 2.5V @ 150µA | 90 nC @ 10 V | 5360 pF @ 25 V | - | - | - | 4.4mOhm @ 50A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
||
Infineon Technologies |
PLANAR 40<-<100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 1.9A (Ta) | 10V | 5.5V @ 250µA | 15 nC @ 10 V | 330 pF @ 25 V | ±30V | - | 2.5W (Ta) | 280mOhm @ 1.14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 35A 5X6 PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 35A (Ta), 100A (Tc) | - | 2.35V @ 100µA | 77 nC @ 10 V | 5114 pF @ 15 V | - | - | - | 1.85mOhm @ 50A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
SIC_DISCRETE
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 38A (Tc) | 18V, 20V | 5.1V @ 4.3mA | 32 nC @ 20 V | 880 pF @ 800 V | +23V, -5V | - | 202W (Tc) | 75mOhm @ 13A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
MOSFET N-CH 25V 16A/40A TSDSON
|
封装: - |
库存191,511 |
|
MOSFET (Metal Oxide) | 25 V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 16 nC @ 10 V | 1200 pF @ 12 V | ±20V | - | 2.1W (Ta), 37W (Tc) | 3.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 14 nC @ 10 V | 1500 pF @ 15 V | ±20V | - | 38W (Tc) | 11.4mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |