页 24 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

ISZ0703NLSATMA1

Infineon Technologies

MOSFET N-CH 60V 13A/56A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-25
Package / Case: 8-PowerTDFN

封装: -

库存54,984

MOSFET (Metal Oxide)

60 V

13A (Ta), 56A (Tc)

4.5V, 10V

2.3V @ 15µA

23 nC @ 10 V

1400 pF @ 30 V

±20V

-

2.5W (Ta), 44W (Tc)

7.3mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8-25

8-PowerTDFN

IQD020N10NM5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-U04
Package / Case: 8-PowerTDFN

封装: -

库存15,000

MOSFET (Metal Oxide)

100 V

26A (Ta), 276A (Tc)

6V, 10V

3.8V @ 159µA

134 nC @ 10 V

9500 pF @ 50 V

±20V

-

3W (Ta), 333W (Tc)

2.05mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-U04

8-PowerTDFN

IRFC3710D

Infineon Technologies

MOSFET 100V 57A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 57A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 23mOhm @ 57A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

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MOSFET (Metal Oxide)

100 V

57A

10V

-

23mOhm @ 57A, 10V

-

Surface Mount

Die

ISC022N10NM6ATMA1

Infineon Technologies

TRENCH >=100V PG-TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

封装: -

库存20,016

MOSFET (Metal Oxide)

100 V

25A (Ta), 230A (Tc)

8V, 10V

3.3V @ 147µA

91 nC @ 10 V

6880 pF @ 50 V

±20V

-

3W (Ta), 254W (Tc)

2.24mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-3

8-PowerTDFN

IRFB3077PBFXKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-904
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

75 V

120A (Tc)

10V

4V @ 250µA

220 nC @ 10 V

9400 pF @ 50 V

±20V

-

370W (Tc)

3.3mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-904

TO-220-3

IPB60R055CFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 38A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存3,150

MOSFET (Metal Oxide)

600 V

38A (Tc)

10V

4.5V @ 900µA

79 nC @ 10 V

3194 pF @ 400 V

±20V

-

178W (Tc)

55mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRF7404QTRPBF

Infineon Technologies

MOSFET P-CH 20V 6.7A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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MOSFET (Metal Oxide)

20 V

6.7A (Ta)

-

700mV @ 250µA (Min)

50 nC @ 4.5 V

1500 pF @ 15 V

-

40mOhm @ 3.2A, 4.5V

-

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

SPA08N50C3XKSA1

Infineon Technologies

MOSFET N-CH 560V 7.6A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

封装: -

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MOSFET (Metal Oxide)

560 V

7.6A (Tc)

10V

3.9V @ 350µA

32 nC @ 10 V

750 pF @ 25 V

±20V

-

32W (Tc)

600mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

IPP100N10S305AKSA2

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

100 V

100A (Tc)

10V

4V @ 240µA

176 nC @ 10 V

11570 pF @ 25 V

±20V

-

300W (Tc)

5.1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

BTS244ZE3062AATMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-5-2
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB

封装: -

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MOSFET (Metal Oxide)

55 V

35A (Tc)

4.5V, 10V

2V @ 130µA

130 nC @ 10 V

2660 pF @ 25 V

±20V

-

170W (Tc)

13mOhm @ 19A, 10V

-40°C ~ 175°C (TJ)

Surface Mount

PG-TO263-5-2

TO-263-5, D2PAK (4 Leads + Tab), TO-263BB

BSC010N04LS6ATMA1

Infineon Technologies

MOSFET N-CH 40V 40A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

封装: -

库存31,635

MOSFET (Metal Oxide)

40 V

40A (Ta), 100A (Tc)

4.5V, 10V

2.3V @ 250µA

67 nC @ 4.5 V

4600 pF @ 20 V

±20V

-

3W (Ta), 150W (Tc)

1mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

AUIRFSL4010

Infineon Technologies

MOSFET N CH 100V 180A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

封装: -

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MOSFET (Metal Oxide)

100 V

180A (Tc)

-

4V @ 250µA

215 nC @ 10 V

9575 pF @ 50 V

-

375W (Tc)

4.7mOhm @ 106A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2PAK, TO-262AA

IRFB4620PBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-904
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

200 V

25A (Tc)

10V

5V @ 100µA

38 nC @ 10 V

1710 pF @ 50 V

±20V

-

144W (Tc)

72.5mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-904

TO-220-3

IRFHM830DTR2PBF

Infineon Technologies

MOSFET N-CH 30V 20A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (3x3)
Package / Case: 8-VQFN Exposed Pad

封装: -

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MOSFET (Metal Oxide)

30 V

20A (Ta), 40A (Tc)

-

2.35V @ 50µA

27 nC @ 10 V

1797 pF @ 25 V

-

4.3mOhm @ 20A, 10V

-

Surface Mount

PQFN (3x3)

8-VQFN Exposed Pad

IRLB3034PBFXKMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

40 V

195A (Tc)

4.5V, 10V

2.5V @ 250µA

162 nC @ 4.5 V

10315 pF @ 25 V

±20V

-

375W (Tc)

1.7mOhm @ 195A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

ISC030N10NM6ATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 179A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 109µA
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 208W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

封装: -

库存13,302

MOSFET (Metal Oxide)

100 V

21A (Ta), 179A (Tc)

8V, 10V

3.3V @ 109µA

69 nC @ 10 V

5200 pF @ 50 V

±20V

-

3W (Ta), 208W (Tc)

3mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPU95R3K7P7AKMA1

Infineon Technologies

MOSFET N-CH 950V 2A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: -

库存1,581

MOSFET (Metal Oxide)

950 V

2A (Tc)

10V

3.5V @ 40µA

6 nC @ 10 V

196 pF @ 400 V

±20V

-

22W (Tc)

3.7Ohm @ 800mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Short Leads, IPak, TO-251AA

IPT60R065S7XTMA1

Infineon Technologies

MOSFET N-CH 600V 8A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-2
Package / Case: 8-PowerSFN

封装: -

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MOSFET (Metal Oxide)

600 V

8A (Tc)

12V

4.5V @ 490µA

51 nC @ 12 V

1932 pF @ 300 V

±20V

-

167W (Tc)

65mOhm @ 8A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-2

8-PowerSFN

BSC0901NSATMA1

Infineon Technologies

MOSFET N-CH 30V 28A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-5
Package / Case: 8-PowerTDFN

封装: -

库存97,470

MOSFET (Metal Oxide)

30 V

28A (Ta), 100A (Tc)

4.5V, 10V

2.2V @ 250µA

44 nC @ 10 V

2800 pF @ 15 V

±20V

-

2.5W (Ta), 69W (Tc)

1.9mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-5

8-PowerTDFN

IPD65R660CFDATMA2

Infineon Technologies

MOSFET N-CH 700V 6A TO252-3-313

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存5,481

MOSFET (Metal Oxide)

700 V

6A (Tc)

10V

4.5V @ 200µA

22 nC @ 10 V

615 pF @ 100 V

±20V

-

63W (Tc)

660mOhm @ 2.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPP023N08N5XKSA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

80 V

120A (Tc)

6V, 10V

3.8V @ 208µA

166 nC @ 10 V

12100 pF @ 40 V

±20V

-

300W (Tc)

2.3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

BSZ024N04LS6ATMA1

Infineon Technologies

MOSFET N-CH 40V 24A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

封装: -

库存269,583

MOSFET (Metal Oxide)

40 V

24A (Ta), 40A (Tc)

4.5V, 10V

2.3V @ 250µA

25 nC @ 10 V

1800 pF @ 20 V

±20V

-

2.5W (Ta), 75W (Tc)

2.4mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

IPP80N07S405AKSA1

Infineon Technologies

MOSFET N-CH TO220-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

80A (Tc)

-

BSO613SPVGHUMA1

Infineon Technologies

MOSFET P-CH 60V 3.44A 8DSO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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MOSFET (Metal Oxide)

60 V

3.44A (Ta)

10V

4V @ 1mA

30 nC @ 10 V

875 pF @ 25 V

±20V

-

2.5W (Ta)

130mOhm @ 3.44A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8

8-SOIC (0.154", 3.90mm Width)

IPT129N20NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封装: -

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MOSFET (Metal Oxide)

200 V

11A (Ta), 87A (Tc)

10V, 15V

4.5V @ 129µA

56 nC @ 10 V

3800 pF @ 100 V

±20V

-

3.8W (Ta), 234W (Tc)

12mOhm @ 65A, 15V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

BSZ0902NSIATMA1

Infineon Technologies

MOSFET N-CH 30V 21A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

30 V

21A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

24 nC @ 10 V

1500 pF @ 15 V

±20V

-

2.5W (Ta), 48W (Tc)

2.8mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

IPP018N10N5XKSA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封装: -

库存210

MOSFET (Metal Oxide)

100 V

205A (Tc)

6V, 10V

3.8V @ 270µA

210 nC @ 10 V

16000 pF @ 50 V

±20V

-

3.8W (Ta), 375W (Tc)

1.83mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPD50R280CEBTMA1

Infineon Technologies

MOSFET N-CH 500V 13A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

500 V

13A (Tc)

13V

3.5V @ 350µA

32.6 nC @ 10 V

773 pF @ 100 V

±20V

-

92W (Tc)

280mOhm @ 4.2A, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPP014N06NF2SAKMA2

Infineon Technologies

TRENCH 40<-<100V PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-U05
Package / Case: TO-220-3

封装: -

库存660

MOSFET (Metal Oxide)

60 V

39A (Ta), 198A (Tc)

6V, 10V

3.3V @ 246µA

305 nC @ 10 V

13800 pF @ 30 V

±20V

-

3.8W (Ta), 300W (Tc)

1.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-U05

TO-220-3

IPP014N06NF2SAKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-U05
Package / Case: TO-220-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

39A (Ta), 198A (Tc)

6V, 10V

3.3V @ 246µA

305 nC @ 10 V

13800 pF @ 30 V

±20V

-

3.8W (Ta), 300W (Tc)

1.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-U05

TO-220-3