图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 600V 29A HDSOP-10
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封装: - |
库存9,300 |
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MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 4V @ 490µA | 42 nC @ 10 V | 1640 pF @ 400 V | ±20V | - | 174W (Tc) | 80mOhm @ 9.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 50 V | 17A (Tc) | 10V | 3.5V @ 1mA | - | 600 pF @ 25 V | ±20V | - | 50W | 100mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO220-3-5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-31
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封装: - |
库存125,349 |
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MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 2V @ 45µA | 78 nC @ 10 V | 6300 pF @ 20 V | ±20V | - | 94W (Tc) | 3.6mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
SMALL SIGNAL N-CHANNEL MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | 143 pF @ 10 V | ±12V | - | 500mW (Ta) | 140mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 100V 27A/202A 8HSOF
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封装: - |
库存21,648 |
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MOSFET (Metal Oxide) | 100 V | 27A (Ta), 202A (Tc) | 6V, 10V | 3.8V @ 158µA | 120 nC @ 10 V | 8800 pF @ 50 V | ±20V | - | 214W (Tc) | 2.6mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
IC MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 12A/40A TSDSON
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封装: - |
库存109,578 |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 10 nC @ 10 V | 670 pF @ 15 V | ±20V | - | - | 6.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 120 V | 26A (Ta), 222A (Tc) | 8V, 10V | 3.6V @ 169µA | 88 nC @ 10 V | 6500 pF @ 60 V | ±20V | - | 3.8W (Ta), 278W (Tc) | 2.6mOhm @ 115A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 600V 101A TO247-4-3
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封装: - |
库存630 |
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MOSFET (Metal Oxide) | 600 V | 101A (Tc) | 10V | 4V @ 2.03mA | 164 nC @ 10 V | 7144 pF @ 400 V | ±20V | - | 291W (Tc) | 24mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 |
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Infineon Technologies |
TRENCH >=100V DIRECTFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | - | 1.2V @ 250µA | 12 nC @ 5 V | 740 pF @ 15 V | - | - | - | 45mOhm @ 4.2A, 4.5V | - | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
OPTIMOS 5 POWER MOSFET 60 V
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封装: - |
库存5,193 |
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MOSFET (Metal Oxide) | 60 V | 36A (Ta), 242A (Tc) | 6V, 10V | 3.3V @ 95µA | 89 nC @ 10 V | 5200 pF @ 30 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 1.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 40V 8.9A/31A TSDSON
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 8.9A (Ta), 31A (Tc) | 10V | 4V @ 10µA | 10 nC @ 10 V | 840 pF @ 20 V | ±20V | - | 2.1W (Ta), 25W (Tc) | 16.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 6.1A (Tc) | 10V | 3.5V @ 220µA | 27 nC @ 10 V | 550 pF @ 100 V | ±20V | - | 60W (Tc) | 600mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO247-3
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 3.5V @ 430µA | 43 nC @ 10 V | 950 pF @ 100 V | ±20V | - | 104W (Tc) | 280mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 36A/180A 2WDSON
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 36A (Ta), 180A (Tc) | 10V | 4V @ 250µA | 142 nC @ 10 V | 12000 pF @ 20 V | ±20V | - | 2.8W (Ta), 89W (Tc) | 1.5mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
OPTIMOS 5 POWER MOSFET
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封装: - |
库存7,962 |
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MOSFET (Metal Oxide) | 80 V | 42A (Ta), 408A (Tc) | 6V, 10V | 3.8V @ 280µA | 223 nC @ 10 V | 17000 pF @ 40 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.1mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 80V 240A 8HSOF
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封装: - |
库存3,291 |
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MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 6V, 10V | 3.8V @ 160µA | 130 nC @ 10 V | 9264 pF @ 40 V | ±20V | - | 230W (Tc) | 1.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 4V @ 250µA | 95 nC @ 10 V | 2840 pF @ 25 V | - | - | 140W (Tc) | 7.5mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 68.5A TO247-3
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封装: - |
库存9 |
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MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | 8400 pF @ 100 V | ±20V | - | 500W (Tc) | 41mOhm @ 33.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 68.5A TO247-3
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封装: - |
库存417 |
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MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | 8400 pF @ 100 V | ±20V | - | 500W (Tc) | 41mOhm @ 33.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 80A DPAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 75 V | 56A (Tc) | - | 4V @ 100µA | 84 nC @ 10 V | 3070 pF @ 50 V | - | - | 140W (Tc) | 9mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 31A (Ta), 323A (Tc) | 6V, 10V | 3.8V @ 159µA | 133 nC @ 10 V | 9200 pF @ 40 V | ±20V | - | 3W (Ta), 333W (Tc) | 1.57mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
COOLMOS CFD7 SUPERJUNCTION MOSFE
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 4.5V @ 420µA | 36 nC @ 10 V | 1694 pF @ 400 V | ±20V | - | 127W (Tc) | 130mOhm @ 8.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存57 |
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MOSFET (Metal Oxide) | 100 V | 103A (Tc) | 6V, 10V | 3.8V @ 85µA | 76 nC @ 10 V | 3600 pF @ 50 V | ±20V | - | 150W (Tc) | 5.05mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 18A TSDSON-8-32
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封装: - |
库存8,388 |
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MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 4.5V, 10V | 2.2V @ 8µA | 8 nC @ 10 V | 470 pF @ 50 V | ±20V | - | 30W (Tc) | 42mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH
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封装: - |
库存1,056 |
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MOSFET (Metal Oxide) | 600 V | 101A (Tc) | 10V | 4.5V @ 2.91mA | 251 nC @ 10 V | 9901 pF @ 400 V | ±20V | - | 416W (Tc) | 18mOhm @ 58.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET
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封装: - |
库存4,992 |
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MOSFET (Metal Oxide) | 100 V | 33A (Ta), 294A (Tc) | 6V, 10V | 3.8V @ 216µA | 195 nC @ 10 V | 9300 pF @ 50 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.75mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |