图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 30V 32A 5X6 PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 32A (Ta), 100A (Tc) | - | 2.35V @ 100µA | 76 nC @ 10 V | 4400 pF @ 15 V | - | - | - | 2.1mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 4.5V @ 790µA | 83 nC @ 12 V | - | ±20V | - | 272W (Tc) | 40mOhm @ 13A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22 | 22-PowerBSOP Module |
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Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
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封装: - |
库存14,793 |
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MOSFET (Metal Oxide) | 30 V | 66A (Ta), 700A (Tc) | 4.5V, 10V | 2V @ 1.46mA | 197 nC @ 10 V | 18000 pF @ 15 V | ±20V | - | 2.5W (Ta), 278W (Tc) | 0.35mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
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Infineon Technologies |
SICFET N-CH 750V PG-HDSOP-22
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封装: - |
库存1,818 |
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SiCFET (Silicon Carbide) | 750 V | 98A (Tc) | 0V, 18V | 5.6V @ 14.9mA | 80 nC @ 18 V | 2869 pF @ 500 V | +23V, -5V | - | 384W (Tc) | 22mOhm @ 41.5A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-22 | 22-PowerBSOP Module |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存10,863 |
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MOSFET (Metal Oxide) | 100 V | 27.3A | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
1200V COOLSIC MOSFET PG-TO247-3
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封装: - |
库存816 |
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SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 15V | 5.7V @ 5.6mA | 28 nC @ 15 V | 1060 pF @ 800 V | +20V, -7V | - | 150W (Tc) | 104mOhm @ 13A, 15V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
SIC_DISCRETE
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封装: - |
库存120 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 55A (Tc) | 18V, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | 1264 pF @ 800 V | +23V, -5V | - | 268W (Tc) | 50mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-11 | TO-247-4 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 30V 7A MICRO8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 69 nC @ 10 V | 2204 pF @ 25 V | ±20V | - | 1.79W (Ta) | 26mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 950V 14A TO251-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 950 V | 14A (Tc) | 10V | 3.5V @ 360µA | 35 nC @ 10 V | 1053 pF @ 400 V | ±20V | - | 104W (Tc) | 450mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3
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封装: - |
库存25,707 |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 2.2V @ 34µA | 29 nC @ 4.5 V | 4900 pF @ 30 V | ±20V | - | 79W (Tc) | 7.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-311 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 900V 6.9A TO262-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 3.5V @ 460µA | 42 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104W (Tc) | 800mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 61A HDSOP-10
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 61A (Tc) | - | 4.5V @ 900µA | 79 nC @ 10 V | 3194 pF @ 400 V | ±20V | - | 379W (Tc) | 45mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT23
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 12 nC @ 5 V | 633 pF @ 10 V | ±12V | - | 1.3W (Ta) | 65mOhm @ 3.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 80V 300A HSOG-8
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封装: - |
库存6,357 |
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MOSFET (Metal Oxide) | 80 V | 300A (Tc) | 6V, 10V | 3.8V @ 275µA | 231 nC @ 10 V | 16250 pF @ 40 V | ±20V | - | 375W (Tc) | 1.2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
HIGH POWER_NEW
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 200V 21A TO220-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 21A (Tc) | 10V | 4V @ 1mA | - | 1900 pF @ 25 V | ±20V | - | 125W (Tc) | 130mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
TRENCH >=100V PG-TSON-8
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封装: - |
库存84,990 |
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MOSFET (Metal Oxide) | 100 V | 14A (Ta), 85A (Tc) | 6V, 10V | 3.8V @ 48µA | 42 nC @ 10 V | 3000 pF @ 50 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-4 | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 33A (Tc) | 4.5V, 10V | 2V @ 90µA | 90 nC @ 10 V | 1730 pF @ 25 V | ±20V | - | 120W (Tc) | 18mOhm @ 12A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO263-5-2 | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB |
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Infineon Technologies |
MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 12V | 4.5V @ 1.44mA | 150 nC @ 12 V | 5640 pF @ 300 V | ±20V | - | 416W (Tc) | 22mOhm @ 23A, 12V | -40°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Infineon Technologies |
MOSFET N-CH 120V 56A D2PAK
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封装: - |
库存7,638 |
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MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 4V @ 61µA | 49 nC @ 10 V | 3220 pF @ 60 V | ±20V | - | 107W (Tc) | 14.4mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
POWER FIELD-EFFECT TRANSISTOR, 1
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 2V @ 250µA | 20 nC @ 10 V | 1500 pF @ 15 V | ±20V | - | 2.5W (Ta), 28W (Tc) | 9.1mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 120A 8TDSON-33
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 7V, 10V | 3.4V @ 90µA | 115 nC @ 10 V | 7360 pF @ 25 V | ±20V | - | 150W (Tc) | 0.9mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
40V 4.6M OPTIMOS MOSFET SUPERSO8
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封装: - |
库存44,835 |
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MOSFET (Metal Oxide) | 40 V | 19A (Ta), 77A (Tc) | 7V, 10V | 3.4V @ 17µA | 21 nC @ 10 V | 1400 pF @ 20 V | ±20V | - | 3W (Ta), 50W (Tc) | 4.6mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO262-3
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封装: - |
Request a Quote |
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- | - | 80A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 87A TO220
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封装: - |
库存1,437 |
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MOSFET (Metal Oxide) | 60 V | 87A (Tc) | 6V, 10V | 3.3V @ 36µA | 74 nC @ 10 V | 5300 pF @ 30 V | ±20V | - | 38W (Tc) | 2.9mOhm @ 87A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 60V 180MA SOT23-3
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封装: - |
库存300,603 |
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MOSFET (Metal Oxide) | 60 V | 180mA (Ta) | 4.5V, 10V | 2V @ 11µA | 0.59 nC @ 10 V | 18 pF @ 30 V | ±20V | - | 400mW (Ta) | 5.5Ohm @ 180mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3-5 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET 100V 170A DIE
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 170A | 10V | - | - | - | - | - | - | 9mOhm @ 170A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET P-CH 20V 12A 8DSO
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封装: - |
库存33,915 |
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MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 88 nC @ 4.5 V | 9600 pF @ 15 V | ±12V | - | 1.6W (Ta) | 8mOhm @ 14.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 60V 80A TO263-3
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封装: - |
库存9,099 |
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MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 4V @ 5.5mA | 173 nC @ 10 V | 5033 pF @ 25 V | ±20V | - | 340W (Tc) | 23mOhm @ 64A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |