图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET 800V TDSON-8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 18.5A TO247-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 18.5A (Tc) | 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | 1137 pF @ 100 V | ±20V | - | 127W (Tc) | 190mOhm @ 6.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
库存2,250 |
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MOSFET (Metal Oxide) | 60 V | 44A (Ta), 293A (Tc) | 6V, 10V | 3.3V @ 246µA | 305 nC @ 10 V | 13800 pF @ 30 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.05mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-U02 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET P-CH 12V 4.3A SOT-23
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 4.3A (Ta) | - | 950mV @ 250µA | 15 nC @ 5 V | 830 pF @ 10 V | - | - | - | 50mOhm @ 4.3A, 4.5V | - | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
40V 1.5M OPTIMOS MOSFET SUPERSO8
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封装: - |
库存1,557 |
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MOSFET (Metal Oxide) | 40 V | 33A (Ta), 206A (Tc) | 7V, 10V | 3.4V @ 60µA | 67 nC @ 10 V | 4800 pF @ 20 V | ±20V | - | 3W (Ta), 115W (Tc) | 1.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT-23
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | - | 1.2V @ 250µA | 12 nC @ 5 V | 633 pF @ 10 V | - | - | - | 65mOhm @ 3.7A, 4.5V | - | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 80V 100A TDSON-8-34
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封装: - |
库存12,468 |
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MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.8V @ 95µA | 76 nC @ 10 V | 5525 pF @ 40 V | ±20V | - | 167W (Tc) | 3.1mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 20V 25A/100A TDSON
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封装: - |
库存7,446 |
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MOSFET (Metal Oxide) | 20 V | 25A (Ta), 100A (Tc) | 2.5V, 4.5V | 1.2V @ 200µA | 52.7 nC @ 4.5 V | 7800 pF @ 10 V | ±12V | - | 2.8W (Ta), 78W (Tc) | 2.6mOhm @ 50A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存25,734 |
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MOSFET (Metal Oxide) | 120 V | 24A (Ta), 237A (Tc) | 10V | 4V @ 270µA | 198 nC @ 10 V | 13000 pF @ 60 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
SICFET N-CH 1.2KV 36A TO263
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封装: - |
库存5,841 |
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SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | - | 5.7V @ 5.6mA | 34 nC @ 18 V | 1145 pF @ 800 V | +18V, -15V | - | 181W (Tc) | 83mOhm @ 13A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
SILICON CARBIDE MOSFET
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封装: - |
库存5,895 |
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SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 950V 9A TO252-3
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封装: - |
库存6,060 |
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MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 3.5V @ 220µA | 23 nC @ 10 V | 712 pF @ 400 V | ±20V | - | 73W (Tc) | 750mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
IC MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A 6-TSOP
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | - | 1.2V @ 250µA | 22 nC @ 5 V | 1310 pF @ 15 V | - | - | - | 30mOhm @ 6.5A, 4.5V | - | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4V @ 1.037mA | 170 nC @ 10 V | 6860 pF @ 50 V | ±20V | - | 280W (Tc) | 6mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-901 | TO-247-3 |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存10,554 |
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MOSFET (Metal Oxide) | 150 V | 87A (Tc) | 8V, 10V | 4.6V @ 107µA | 40.7 nC @ 10 V | 3230 pF @ 75 V | ±20V | - | 139W (Tc) | 9.3mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223-4
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封装: - |
库存11,919 |
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MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 10V | 4V @ 270µA | 10.8 nC @ 10 V | 420 pF @ 30 V | ±20V | - | 1.8W (Ta), 4.2W (Tc) | 250mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 30V 70A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2V @ 270µA | 175 nC @ 10 V | 12400 pF @ 15 V | ±20V | - | 150W (Tc) | 4.2mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 2V @ 100µA | 57 nC @ 5 V | 7027 pF @ 15 V | ±20V | - | 150W (Tc) | 2.7mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 15A 8-SO
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO247-3
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封装: - |
库存600 |
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MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 3.5V @ 790µA | 52 nC @ 10 V | 2000 pF @ 100 V | ±20V | - | 192W (Tc) | 165mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
TRENCH <= 40V PG-TDSON-8
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封装: - |
库存41,664 |
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MOSFET (Metal Oxide) | 40 V | 36A (Ta), 232A (Tc) | 6V, 10V | 2.8V @ 747µA | 64 nC @ 10 V | 4600 pF @ 20 V | ±20V | - | 3W (Ta), 125W (Tc) | 1.2mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 80A TO220-3
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封装: - |
库存1,686 |
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MOSFET (Metal Oxide) | 30 V | 80A (Tc) | - | 2V @ 253µA | 160 nC @ 10 V | 11300 pF @ 25 V | +5V, -16V | - | 137W (Tc) | 4.4mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
SIC DISCRETE
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封装: - |
库存630 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
SIC DISCRETE
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET_(75V 120V(
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH 40<-<100V PG-TDSON-8
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封装: - |
库存729 |
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MOSFET (Metal Oxide) | 60 V | 37A (Ta), 288A (Tc) | 4.5V, 10V | 2.3V @ 116µA | 170 nC @ 10 V | 11000 pF @ 30 V | ±20V | - | 3W (Ta), 188W (Tc) | 1.15mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-17 | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL AUTOMOTIVE MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 2V @ 150µA | 130 nC @ 10 V | 3160 pF @ 25 V | ±20V | - | 210W (Tc) | 7mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |