页 8 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

IPA90R500C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 11A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

库存1,455

MOSFET (Metal Oxide)

900 V

11A (Tc)

10V

3.5V @ 740µA

68 nC @ 10 V

1700 pF @ 100 V

±20V

-

34W (Tc)

500mOhm @ 6.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IRFH5025TR2PBF

Infineon Technologies

MOSFET N-CH 250V 3.8A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

封装: -

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MOSFET (Metal Oxide)

250 V

3.8A (Ta)

-

5V @ 150µA

56 nC @ 10 V

2150 pF @ 50 V

-

100mOhm @ 5.7A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerVDFN

IPL65R115CFD7AUMA1

Infineon Technologies

COOLMOS CFD7 SUPERJUNCTION MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

封装: -

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MOSFET (Metal Oxide)

650 V

24A (Tc)

10V

4.5V @ 480µA

41 nC @ 10 V

1942 pF @ 400 V

±20V

-

144W (Tc)

115mOhm @ 9.7A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

IAUA250N04S6N007EAUMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-4
Package / Case: 5-PowerSFN

封装: -

库存9,447

MOSFET (Metal Oxide)

40 V

435A (Tj)

7V, 10V

3V @ 130µA

151 nC @ 10 V

9898 pF @ 25 V

±20V

-

250W (Tc)

0.7mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-4

5-PowerSFN

IPB180P04P403ATMA2

Infineon Technologies

MOSFET P-CH 40V 180A TO263-7

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

封装: -

库存5,508

MOSFET (Metal Oxide)

40 V

180A (Tc)

-

4V @ 410µA

250 nC @ 10 V

17640 pF @ 25 V

±20V

-

150W (Tc)

2.8mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2PAK (6 Leads + Tab)

IPN70R750P7SATMA1

Infineon Technologies

MOSFET N-CH 700V 6.5A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 6.7W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

封装: -

库存42,627

MOSFET (Metal Oxide)

700 V

6.5A (Tc)

10V

3.5V @ 70µA

8.3 nC @ 10 V

306 pF @ 400 V

±16V

-

6.7W (Tc)

750mOhm @ 1.4A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-SOT223

TO-261-4, TO-261AA

IRLMS5703TR

Infineon Technologies

MOSFET P-CH 30V 2.3A 6-TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro6™(SOT23-6)
Package / Case: SOT-23-6

封装: -

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MOSFET (Metal Oxide)

30 V

2.3A (Ta)

-

1V @ 250µA

11 nC @ 10 V

170 pF @ 25 V

-

200mOhm @ 1.6A, 10V

-

Surface Mount

Micro6™(SOT23-6)

SOT-23-6

IQE006NE2LM5SCATMA1

Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHSON-8-1
Package / Case: 8-PowerWDFN

封装: -

库存17,727

MOSFET (Metal Oxide)

25 V

47A (Ta), 310A (Tc)

4.5V, 10V

2V @ 250µA

82 nC @ 10 V

5453 pF @ 12 V

±16V

-

2.1W (Ta), 89W (Tc)

0.58mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-WHSON-8-1

8-PowerWDFN

IPA95R450PFD7XKSA1

Infineon Technologies

MOSFET N-CH 950V 7.2A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-313
Package / Case: TO-220-3 Full Pack

封装: -

库存1,425

MOSFET (Metal Oxide)

950 V

7.2A (Tc)

10V

3.5V @ 360µA

43 nC @ 10 V

1230 pF @ 400 V

±20V

-

30W (Tc)

450mOhm @ 7.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-313

TO-220-3 Full Pack

IPB108N15N3GATMA1

Infineon Technologies

MOSFET N-CH 150V 83A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 83A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存10,638

MOSFET (Metal Oxide)

150 V

83A (Tc)

8V, 10V

4V @ 160µA

55 nC @ 10 V

3230 pF @ 75 V

±20V

-

214W (Tc)

10.8mOhm @ 83A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRLML5103TR

Infineon Technologies

MOSFET P-CH 30V 760MA SOT-23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro3™/SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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MOSFET (Metal Oxide)

30 V

760mA (Ta)

-

1V @ 250µA

5.1 nC @ 10 V

75 pF @ 25 V

-

600mOhm @ 600mA, 10V

-

Surface Mount

Micro3™/SOT-23

TO-236-3, SC-59, SOT-23-3

IPD031N06L3GATMA1

Infineon Technologies

MOSFET N-CH 60V 100A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存212,697

MOSFET (Metal Oxide)

60 V

100A (Tc)

4.5V, 10V

2.2V @ 93µA

79 nC @ 4.5 V

13000 pF @ 30 V

±20V

-

167W (Tc)

3.1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

BSC152N10NSFG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

100 V

9.4A (Ta), 63A (Tc)

10V

4V @ 72µA

29 nC @ 10 V

1900 pF @ 50 V

±20V

-

114W (Tc)

15.2mOhm @ 25A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPB65R155CFD7ATMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

650 V

15A (Tc)

10V

4.5V @ 320µA

28 nC @ 10 V

1283 pF @ 400 V

±20V

-

77W (Tc)

155mOhm @ 6.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB156N22NFDATMA1

Infineon Technologies

MOSFET N-CH 220V 72A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 220 V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存3,153

MOSFET (Metal Oxide)

220 V

72A (Tc)

10V

4V @ 270µA

87 nC @ 10 V

6930 pF @ 110 V

±20V

-

300W (Tc)

15.6mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB034N06N3G

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

封装: -

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MOSFET (Metal Oxide)

60 V

100A (Tc)

10V

4V @ 93µA

130 nC @ 10 V

11000 pF @ 30 V

±20V

-

167W (Tc)

3.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2PAK (6 Leads + Tab)

IPD70N10S312ATMA2

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

100 V

70A (Tc)

10V

4V @ 83µA

65 nC @ 10 V

4355 pF @ 25 V

±20V

-

125W (Tc)

11.1mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IQE022N06LM5SCATMA1

Infineon Technologies

OPTIMOS 5 POWER-TRANSISTOR 60V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHSON-8
Package / Case: 8-PowerWDFN

封装: -

库存17,985

MOSFET (Metal Oxide)

60 V

24A (Ta), 151A (Tc)

4.5V, 10V

2.3V @ 48µA

53 nC @ 10 V

4420 pF @ 30 V

±20V

-

2.5W (Ta), 100W (Tc)

2.2mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WHSON-8

8-PowerWDFN

IPBE65R050CFD7AATMA1

Infineon Technologies

MOSFET N-CH 650V 45A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3-10
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

封装: -

库存8,553

MOSFET (Metal Oxide)

650 V

45A (Tc)

10V

4.5V @ 1.24mA

102 nC @ 10 V

4975 pF @ 400 V

±20V

-

227W (Tc)

50mOhm @ 24.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-7-3-10

TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

IPD50N10S3L16ATMA2

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

100 V

50A (Tc)

4.5V, 10V

2.4V @ 60µA

64 nC @ 10 V

4180 pF @ 25 V

±20V

-

100W (Tc)

15mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

ISC130N20NM6ATMA1

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IPA50R280E6

Infineon Technologies

IPA50R280 - 500V, CoolMOS N-Chan

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IPP60R145CFD7XKSA1

Infineon Technologies

MOSFET N CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

600 V

16A (Tc)

10V

4.5V @ 340µA

31 nC @ 10 V

1330 pF @ 400 V

±20V

-

83W (Tc)

145mOhm @ 6.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IMZA120R014M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-8
Package / Case: TO-247-4

封装: -

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SiCFET (Silicon Carbide)

1200 V

127A (Tc)

15V, 18V

5.2V @ 23.4mA

110 nC @ 18 V

4580 nF @ 25 V

+20V, -5V

-

455W (Tc)

18.4mOhm @ 54.3A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-8

TO-247-4

SPP11N65C3HKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO-220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

11A (Tc)

-

SPP17N80C3XKSA1

Infineon Technologies

MOSFET N-CH 800V 17A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

库存468

MOSFET (Metal Oxide)

800 V

17A (Tc)

10V

3.9V @ 1mA

177 nC @ 10 V

2320 pF @ 25 V

±20V

-

208W (Tc)

290mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPA057N06N3GXKSA1

Infineon Technologies

MOSFET N-CH 60V 60A TO220-3-31

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

封装: -

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MOSFET (Metal Oxide)

60 V

60A (Tc)

10V

4V @ 58µA

82 nC @ 10 V

6600 pF @ 30 V

±20V

-

38W (Tc)

5.7mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

BSC022N04LS6ATMA1

Infineon Technologies

MOSFET N-CH 40V 27A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

封装: -

库存45,510

MOSFET (Metal Oxide)

40 V

27A (Ta), 100A (Tc)

4.5V, 10V

2.3V @ 250µA

28 nC @ 10 V

1900 pF @ 20 V

±20V

-

3W (Ta), 79W (Tc)

2.2mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

IPB034N06N3GATMA2

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

100A (Tc)

10V

4V @ 93µA

130 nC @ 10 V

11000 pF @ 30 V

±20V

-

167W (Tc)

3.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2PAK (6 Leads + Tab)

IPB013N06NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存465

MOSFET (Metal Oxide)

60 V

40A (Ta), 198A (Tc)

6V, 10V

3.3V @ 246µA

305 nC @ 10 V

13800 pF @ 30 V

±20V

-

3.8W (Ta), 300W (Tc)

1.3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPA90R500C3XKSA2	Infineon Technologies	MOSFET N-CH 900V 11A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 740µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: -	库存1,455	MOSFET (Metal Oxide)	900 V	11A (Tc)	10V	3.5V @ 740µA	68 nC @ 10 V	1700 pF @ 100 V	±20V	-	34W (Tc)	500mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IRFH5025TR2PBF	Infineon Technologies	MOSFET N-CH 250V 3.8A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	250 V	3.8A (Ta)	-	5V @ 150µA	56 nC @ 10 V	2150 pF @ 50 V	-	-	-	100mOhm @ 5.7A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
IPL65R115CFD7AUMA1	Infineon Technologies	COOLMOS CFD7 SUPERJUNCTION MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 480µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4.5V @ 480µA	41 nC @ 10 V	1942 pF @ 400 V	±20V	-	144W (Tc)	115mOhm @ 9.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IAUA250N04S6N007EAUMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-4 Package / Case: 5-PowerSFN	封装: -	库存9,447	MOSFET (Metal Oxide)	40 V	435A (Tj)	7V, 10V	3V @ 130µA	151 nC @ 10 V	9898 pF @ 25 V	±20V	-	250W (Tc)	0.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-4	5-PowerSFN
IPB180P04P403ATMA2	Infineon Technologies	MOSFET P-CH 40V 180A TO263-7 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	封装: -	库存5,508	MOSFET (Metal Oxide)	40 V	180A (Tc)	-	4V @ 410µA	250 nC @ 10 V	17640 pF @ 25 V	±20V	-	150W (Tc)	2.8mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
IPN70R750P7SATMA1	Infineon Technologies	MOSFET N-CH 700V 6.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 6.7W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	封装: -	库存42,627	MOSFET (Metal Oxide)	700 V	6.5A (Tc)	10V	3.5V @ 70µA	8.3 nC @ 10 V	306 pF @ 400 V	±16V	-	6.7W (Tc)	750mOhm @ 1.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IRLMS5703TR	Infineon Technologies	MOSFET P-CH 30V 2.3A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro6™(SOT23-6) Package / Case: SOT-23-6	封装: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.3A (Ta)	-	1V @ 250µA	11 nC @ 10 V	170 pF @ 25 V	-	-	-	200mOhm @ 1.6A, 10V	-	Surface Mount	Micro6™(SOT23-6)	SOT-23-6
IQE006NE2LM5SCATMA1	Infineon Technologies	OPTIMOS LOWVOLTAGE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHSON-8-1 Package / Case: 8-PowerWDFN	封装: -	库存17,727	MOSFET (Metal Oxide)	25 V	47A (Ta), 310A (Tc)	4.5V, 10V	2V @ 250µA	82 nC @ 10 V	5453 pF @ 12 V	±16V	-	2.1W (Ta), 89W (Tc)	0.58mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-WHSON-8-1	8-PowerWDFN
IPA95R450PFD7XKSA1	Infineon Technologies	MOSFET N-CH 950V 7.2A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-313 Package / Case: TO-220-3 Full Pack	封装: -	库存1,425	MOSFET (Metal Oxide)	950 V	7.2A (Tc)	10V	3.5V @ 360µA	43 nC @ 10 V	1230 pF @ 400 V	±20V	-	30W (Tc)	450mOhm @ 7.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-313	TO-220-3 Full Pack
IPB108N15N3GATMA1	Infineon Technologies	MOSFET N-CH 150V 83A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 83A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存10,638	MOSFET (Metal Oxide)	150 V	83A (Tc)	8V, 10V	4V @ 160µA	55 nC @ 10 V	3230 pF @ 75 V	±20V	-	214W (Tc)	10.8mOhm @ 83A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRLML5103TR	Infineon Technologies	MOSFET P-CH 30V 760MA SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro3™/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	30 V	760mA (Ta)	-	1V @ 250µA	5.1 nC @ 10 V	75 pF @ 25 V	-	-	-	600mOhm @ 600mA, 10V	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
IPD031N06L3GATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存212,697	MOSFET (Metal Oxide)	60 V	100A (Tc)	4.5V, 10V	2.2V @ 93µA	79 nC @ 4.5 V	13000 pF @ 30 V	±20V	-	167W (Tc)	3.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC152N10NSFG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 72µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	9.4A (Ta), 63A (Tc)	10V	4V @ 72µA	29 nC @ 10 V	1900 pF @ 50 V	±20V	-	114W (Tc)	15.2mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPB65R155CFD7ATMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	4.5V @ 320µA	28 nC @ 10 V	1283 pF @ 400 V	±20V	-	77W (Tc)	155mOhm @ 6.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB156N22NFDATMA1	Infineon Technologies	MOSFET N-CH 220V 72A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 220 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存3,153	MOSFET (Metal Oxide)	220 V	72A (Tc)	10V	4V @ 270µA	87 nC @ 10 V	6930 pF @ 110 V	±20V	-	300W (Tc)	15.6mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB034N06N3G	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4V @ 93µA	130 nC @ 10 V	11000 pF @ 30 V	±20V	-	167W (Tc)	3.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
IPD70N10S312ATMA2	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	70A (Tc)	10V	4V @ 83µA	65 nC @ 10 V	4355 pF @ 25 V	±20V	-	125W (Tc)	11.1mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IQE022N06LM5SCATMA1	Infineon Technologies	OPTIMOS 5 POWER-TRANSISTOR 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 48µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHSON-8 Package / Case: 8-PowerWDFN	封装: -	库存17,985	MOSFET (Metal Oxide)	60 V	24A (Ta), 151A (Tc)	4.5V, 10V	2.3V @ 48µA	53 nC @ 10 V	4420 pF @ 30 V	±20V	-	2.5W (Ta), 100W (Tc)	2.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHSON-8	8-PowerWDFN
IPBE65R050CFD7AATMA1	Infineon Technologies	MOSFET N-CH 650V 45A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3-10 Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	封装: -	库存8,553	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 1.24mA	102 nC @ 10 V	4975 pF @ 400 V	±20V	-	227W (Tc)	50mOhm @ 24.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-7-3-10	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
IPD50N10S3L16ATMA2	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	50A (Tc)	4.5V, 10V	2.4V @ 60µA	64 nC @ 10 V	4180 pF @ 25 V	±20V	-	100W (Tc)	15mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
ISC130N20NM6ATMA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA50R280E6	Infineon Technologies	IPA50R280 - 500V, CoolMOS N-Chan FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R145CFD7XKSA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	4.5V @ 340µA	31 nC @ 10 V	1330 pF @ 400 V	±20V	-	83W (Tc)	145mOhm @ 6.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IMZA120R014M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.2V @ 23.4mA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-8 Package / Case: TO-247-4	封装: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	127A (Tc)	15V, 18V	5.2V @ 23.4mA	110 nC @ 18 V	4580 nF @ 25 V	+20V, -5V	-	455W (Tc)	18.4mOhm @ 54.3A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-8	TO-247-4
SPP11N65C3HKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	11A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
SPP17N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 17A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	库存468	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	3.9V @ 1mA	177 nC @ 10 V	2320 pF @ 25 V	±20V	-	208W (Tc)	290mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPA057N06N3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 60A TO220-3-31 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 58µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	60A (Tc)	10V	4V @ 58µA	82 nC @ 10 V	6600 pF @ 30 V	±20V	-	38W (Tc)	5.7mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
BSC022N04LS6ATMA1	Infineon Technologies	MOSFET N-CH 40V 27A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	封装: -	库存45,510	MOSFET (Metal Oxide)	40 V	27A (Ta), 100A (Tc)	4.5V, 10V	2.3V @ 250µA	28 nC @ 10 V	1900 pF @ 20 V	±20V	-	3W (Ta), 79W (Tc)	2.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPB034N06N3GATMA2	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4V @ 93µA	130 nC @ 10 V	11000 pF @ 30 V	±20V	-	167W (Tc)	3.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
IPB013N06NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 246µA Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存465	MOSFET (Metal Oxide)	60 V	40A (Ta), 198A (Tc)	6V, 10V	3.3V @ 246µA	305 nC @ 10 V	13800 pF @ 30 V	±20V	-	3.8W (Ta), 300W (Tc)	1.3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB