页 13 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

BSC120N12LSGATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: -

库存7,386

MOSFET (Metal Oxide)

120 V

10A (Ta), 68A (Tc)

4.5V, 10V

2.4V @ 72µA

51 nC @ 10 V

4900 pF @ 60 V

±20V

-

114W (Tc)

12mOhm @ 34A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPI100N04S303MATMA1

Infineon Technologies

MOSFET N-CH TO262-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IPI100N04S303MATMA2

Infineon Technologies

MOSFET N-CH TO262-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IPW60R040CFD7XKSA1

Infineon Technologies

MOSFET N-CH 600V 50A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

600 V

50A (Tc)

10V

4.5V @ 1.25mA

109 nC @ 10 V

4354 pF @ 400 V

±20V

-

227W (Tc)

40mOhm @ 24.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IRFCZ44VB

Infineon Technologies

MOSFET 60V 55A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 55A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 55A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

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MOSFET (Metal Oxide)

60 V

55A

10V

-

16.5mOhm @ 55A, 10V

-

Surface Mount

Die

IRLH7134TR2PBF

Infineon Technologies

MOSFET N-CH 40V 26A 8PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

40 V

26A (Ta), 85A (Tc)

-

2.5V @ 100µA

58 nC @ 4.5 V

3720 pF @ 25 V

-

3.3mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

IAUC120N06S5L015ATMA1

Infineon Technologies

MOSFET_)40V 60V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-43
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

60 V

235A (Tj)

4.5V, 10V

2.2V @ 94µA

114 nC @ 10 V

8193 pF @ 30 V

±20V

-

167W (Tc)

1.5mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-43

8-PowerTDFN

SPD04N50C3BTMA1

Infineon Technologies

MOSFET N-CH 560V 4.5A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

560 V

4.5A (Tc)

10V

3.9V @ 200µA

22 nC @ 10 V

470 pF @ 25 V

±20V

-

50W (Tc)

950mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

AUIRFR3710ZTRL

Infineon Technologies

MOSFET N-CH 100V 42A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

100 V

42A (Tc)

-

4V @ 250µA

100 nC @ 10 V

2930 pF @ 25 V

-

140W (Tc)

18mOhm @ 33A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPP60R520C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 8.1A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

600 V

8.1A (Tc)

10V

3.5V @ 230µA

23.4 nC @ 10 V

512 pF @ 100 V

±20V

-

66W (Tc)

520mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IRFP3006PBFXKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

60 V

195A (Tc)

10V

4V @ 250µA

300 nC @ 10 V

8970 pF @ 50 V

±20V

-

375W (Tc)

2.5mOhm @ 170A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IRFB4310ZPBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

100 V

120A (Tc)

10V

4V @ 1.037mA

170 nC @ 10 V

6860 pF @ 50 V

±20V

-

250W (Tc)

6mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

ISC007N06NM6ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IPDQ60R035CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW PG-HDSOP-22

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封装: -

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MOSFET (Metal Oxide)

600 V

-

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IPQC60T017S7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IAUC100N08S5N034ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

80 V

132A (Tj)

6V, 10V

3.8V @ 78µA

66 nC @ 10 V

4559 pF @ 40 V

±20V

-

136W (Tc)

3.4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

IPA60R520C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 8.1A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

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MOSFET (Metal Oxide)

600 V

8.1A (Tc)

10V

3.5V @ 230µA

23.4 nC @ 10 V

512 pF @ 100 V

±20V

-

29W (Tc)

520mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

64-2116PBF

Infineon Technologies

MOSFET N-CH 100V 130A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IPB038N12N3GATMA1

Infineon Technologies

MOSFET N-CH 120V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存7,350

MOSFET (Metal Oxide)

120 V

120A (Tc)

10V

4V @ 270µA

211 nC @ 10 V

13800 pF @ 60 V

±20V

-

300W (Tc)

3.8mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSC009NE2LSATMA1

Infineon Technologies

MOSFET N-CH 25V 41A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-7
Package / Case: 8-PowerTDFN

封装: -

库存146,778

MOSFET (Metal Oxide)

25 V

41A (Ta), 100A (Tc)

4.5V, 10V

2.2V @ 250µA

126 nC @ 10 V

5800 pF @ 12 V

±20V

-

2.5W (Ta), 96W (Tc)

0.9mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-7

8-PowerTDFN

IST026N10NM5AUMA1

Infineon Technologies

TRENCH >=100V PG-HSOF-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-1
Package / Case: 5-PowerSFN

封装: -

库存5,004

MOSFET (Metal Oxide)

100 V

27A (Ta), 248A (Tc)

6V, 10V

3.8V @ 148µA

125 nC @ 10 V

6300 pF @ 50 V

±20V

-

3.8W (Ta), 313W (Tc)

2.6mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-1

5-PowerSFN

IRF7805ZTRPBF-1

Infineon Technologies

MOSFET N-CH 30V 16A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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MOSFET (Metal Oxide)

30 V

16A (Ta)

4.5V, 10V

2.25V @ 250µA

27 nC @ 4.5 V

2080 pF @ 15 V

±20V

-

2.5W (Ta)

6.8mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

IPB65R095C7ATMA2

Infineon Technologies

MOSFET N-CH 650V 24A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存10,197

MOSFET (Metal Oxide)

650 V

24A (Tc)

10V

4V @ 590µA

45 nC @ 10 V

2140 pF @ 400 V

±20V

-

128W (Tc)

95mOhm @ 11.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPA60R125C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 30A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

库存1,428

MOSFET (Metal Oxide)

600 V

30A (Tc)

10V

3.5V @ 960µA

96 nC @ 10 V

2127 pF @ 100 V

±20V

-

34W (Tc)

125mOhm @ 14.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPB034N06L3GATMA1

Infineon Technologies

MOSFET N-CH 60V 90A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存5,931

MOSFET (Metal Oxide)

60 V

90A (Tc)

4.5V, 10V

2.2V @ 93µA

79 nC @ 4.5 V

13000 pF @ 30 V

±20V

-

167W (Tc)

3.4mOhm @ 90A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

SPB20N60C3ATMA1

Infineon Technologies

MOSFET N-CH 600V 20.7A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存13,707

MOSFET (Metal Oxide)

600 V

20.7A (Tc)

10V

3.9V @ 1mA

114 nC @ 10 V

2400 pF @ 25 V

±20V

-

208W (Tc)

190mOhm @ 13.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB65R099CFD7AATMA1

Infineon Technologies

MOSFET N-CH 650V 24A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

MOSFET (Metal Oxide)

650 V

24A (Tc)

10V

4.5V @ 630µA

53 nC @ 10 V

2513 pF @ 400 V

±20V

-

127W (Tc)

99mOhm @ 12.5A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPW65R110CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 31.2A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

650 V

31.2A (Tc)

10V

4.5V @ 1.3mA

118 nC @ 10 V

3240 pF @ 100 V

±20V

-

277.8W (Tc)

110mOhm @ 12.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPW65R110CFDFKSA2

Infineon Technologies

MOSFET N-CH 650V 31.2A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

封装: -

库存624

MOSFET (Metal Oxide)

650 V

31.2A (Tc)

10V

4.5V @ 1.3mA

118 nC @ 10 V

3240 pF @ 100 V

±20V

-

277.8W (Tc)

110mOhm @ 12.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

IPDQ65R125CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封装: -

Request a Quote

MOSFET (Metal Oxide)

650 V

24A (Tc)

10V

4.5V @ 390µA

32 nC @ 10 V

1566 pF @ 400 V

±20V

-

160W (Tc)

125mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSC120N12LSGATMA1	Infineon Technologies	TRENCH >=100V PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 72µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: -	库存7,386	MOSFET (Metal Oxide)	120 V	10A (Ta), 68A (Tc)	4.5V, 10V	2.4V @ 72µA	51 nC @ 10 V	4900 pF @ 60 V	±20V	-	114W (Tc)	12mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPI100N04S303MATMA1	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI100N04S303MATMA2	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW60R040CFD7XKSA1	Infineon Technologies	MOSFET N-CH 600V 50A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	4.5V @ 1.25mA	109 nC @ 10 V	4354 pF @ 400 V	±20V	-	227W (Tc)	40mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRFCZ44VB	Infineon Technologies	MOSFET 60V 55A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 55A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16.5mOhm @ 55A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	55A	10V	-	-	-	-	-	-	16.5mOhm @ 55A, 10V	-	Surface Mount	Die	Die
IRLH7134TR2PBF	Infineon Technologies	MOSFET N-CH 40V 26A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	40 V	26A (Ta), 85A (Tc)	-	2.5V @ 100µA	58 nC @ 4.5 V	3720 pF @ 25 V	-	-	-	3.3mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IAUC120N06S5L015ATMA1	Infineon Technologies	MOSFET_)40V 60V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 235A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-43 Package / Case: 8-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	235A (Tj)	4.5V, 10V	2.2V @ 94µA	114 nC @ 10 V	8193 pF @ 30 V	±20V	-	167W (Tc)	1.5mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-43	8-PowerTDFN
SPD04N50C3BTMA1	Infineon Technologies	MOSFET N-CH 560V 4.5A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	560 V	4.5A (Tc)	10V	3.9V @ 200µA	22 nC @ 10 V	470 pF @ 25 V	±20V	-	50W (Tc)	950mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
AUIRFR3710ZTRL	Infineon Technologies	MOSFET N-CH 100V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	42A (Tc)	-	4V @ 250µA	100 nC @ 10 V	2930 pF @ 25 V	-	-	140W (Tc)	18mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP60R520C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 8.1A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	8.1A (Tc)	10V	3.5V @ 230µA	23.4 nC @ 10 V	512 pF @ 100 V	±20V	-	66W (Tc)	520mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IRFP3006PBFXKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	195A (Tc)	10V	4V @ 250µA	300 nC @ 10 V	8970 pF @ 50 V	±20V	-	375W (Tc)	2.5mOhm @ 170A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFB4310ZPBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.037mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4V @ 1.037mA	170 nC @ 10 V	6860 pF @ 50 V	±20V	-	250W (Tc)	6mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
ISC007N06NM6ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPDQ60R035CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW PG-HDSOP-22 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPQC60T017S7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUC100N08S5N034ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 132A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 78µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	80 V	132A (Tj)	6V, 10V	3.8V @ 78µA	66 nC @ 10 V	4559 pF @ 40 V	±20V	-	136W (Tc)	3.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
IPA60R520C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 8.1A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	8.1A (Tc)	10V	3.5V @ 230µA	23.4 nC @ 10 V	512 pF @ 100 V	±20V	-	29W (Tc)	520mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
64-2116PBF	Infineon Technologies	MOSFET N-CH 100V 130A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB038N12N3GATMA1	Infineon Technologies	MOSFET N-CH 120V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存7,350	MOSFET (Metal Oxide)	120 V	120A (Tc)	10V	4V @ 270µA	211 nC @ 10 V	13800 pF @ 60 V	±20V	-	300W (Tc)	3.8mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC009NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 41A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	封装: -	库存146,778	MOSFET (Metal Oxide)	25 V	41A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	126 nC @ 10 V	5800 pF @ 12 V	±20V	-	2.5W (Ta), 96W (Tc)	0.9mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IST026N10NM5AUMA1	Infineon Technologies	TRENCH >=100V PG-HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 148µA Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	封装: -	库存5,004	MOSFET (Metal Oxide)	100 V	27A (Ta), 248A (Tc)	6V, 10V	3.8V @ 148µA	125 nC @ 10 V	6300 pF @ 50 V	±20V	-	3.8W (Ta), 313W (Tc)	2.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
IRF7805ZTRPBF-1	Infineon Technologies	MOSFET N-CH 30V 16A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote	MOSFET (Metal Oxide)	30 V	16A (Ta)	4.5V, 10V	2.25V @ 250µA	27 nC @ 4.5 V	2080 pF @ 15 V	±20V	-	2.5W (Ta)	6.8mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPB65R095C7ATMA2	Infineon Technologies	MOSFET N-CH 650V 24A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存10,197	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 590µA	45 nC @ 10 V	2140 pF @ 400 V	±20V	-	128W (Tc)	95mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA60R125C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 30A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: -	库存1,428	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	3.5V @ 960µA	96 nC @ 10 V	2127 pF @ 100 V	±20V	-	34W (Tc)	125mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPB034N06L3GATMA1	Infineon Technologies	MOSFET N-CH 60V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存5,931	MOSFET (Metal Oxide)	60 V	90A (Tc)	4.5V, 10V	2.2V @ 93µA	79 nC @ 4.5 V	13000 pF @ 30 V	±20V	-	167W (Tc)	3.4mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SPB20N60C3ATMA1	Infineon Technologies	MOSFET N-CH 600V 20.7A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存13,707	MOSFET (Metal Oxide)	600 V	20.7A (Tc)	10V	3.9V @ 1mA	114 nC @ 10 V	2400 pF @ 25 V	±20V	-	208W (Tc)	190mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB65R099CFD7AATMA1	Infineon Technologies	MOSFET N-CH 650V 24A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4.5V @ 630µA	53 nC @ 10 V	2513 pF @ 400 V	±20V	-	127W (Tc)	99mOhm @ 12.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW65R110CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	4.5V @ 1.3mA	118 nC @ 10 V	3240 pF @ 100 V	±20V	-	277.8W (Tc)	110mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPW65R110CFDFKSA2	Infineon Technologies	MOSFET N-CH 650V 31.2A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	封装: -	库存624	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	4.5V @ 1.3mA	118 nC @ 10 V	3240 pF @ 100 V	±20V	-	277.8W (Tc)	110mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IPDQ65R125CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4.5V @ 390µA	32 nC @ 10 V	1566 pF @ 400 V	±20V	-	160W (Tc)	125mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module