页 161 - IXYS 产品 | 深圳黑森尔电子
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IXYS 产品

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IXGQ150N30TC
IXYS

IGBT 300V 150A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存6,864
MII145-12A3
IXYS

MOD IGBT RBSOA 1200V 160A Y4-M5

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 700W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
  • Current - Collector Cutoff (Max): 6mA
  • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M5
  • Supplier Device Package: Y4-M5
封装: Y4-M5
库存3,552
MMIX4G20N250
IXYS

MOSFET N-CH

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 23A
  • Power - Max: 100W
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
  • Current - Collector Cutoff (Max): 10µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SMD Module, 9 Leads
  • Supplier Device Package: SMPD
封装: 24-SMD Module, 9 Leads
库存2,592
IXFH70N15
IXYS

MOSFET N-CH 150V 70A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存4,288
IXFX30N110P
IXYS

MOSFET N-CH 1100V 30A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1100V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存6,384
IXFN240N15T2
IXYS

MOSFET N-CH 150V 240A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 240A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存3,568
IXFR200N10P
IXYS

MOSFET N-CH 100V 133A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
封装: ISOPLUS247?
库存2,288
hot IXFH22N60P
IXYS

MOSFET N-CH 600V 22A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存390,000
hot IXFH12N80P
IXYS

MOSFET N-CH 800V 12A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存3,920
IXFN32N100Q3
IXYS

MOSFET N-CH 1000V 28A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存4,096
GWM120-0075X1-SMD
IXYS

MOSFET 6N-CH 75V 110A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 110A
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
封装: 17-SMD, Gull Wing
库存2,208
CLA30MT1200NPB
IXYS

THYRISTOR PHASE TO220

  • Triac Type: Standard
  • Voltage - Off State: 1200V (1.2kV)
  • Current - On State (It (RMS)) (Max): 33A
  • Voltage - Gate Trigger (Vgt) (Max): 1.3V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
  • Current - Gate Trigger (Igt) (Max): 40mA
  • Current - Hold (Ih) (Max): 50mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存6,564
hot MCC132-14IO1
IXYS

THYRISTOR MODULE 1400V 2X130A

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 130A
  • Current - On State (It (RMS)) (Max): 300A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
封装: Y4-M6
库存5,520
MMO140-08IO7
IXYS

MODULE AC CONTROL 800V ECO-PAC1

  • Structure: 1-Phase Controller - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 58A
  • Current - On State (It (RMS)) (Max): 90A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: Module
库存5,600
DSEP8-02A
IXYS

DIODE GEN PURP 200V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存3,632
MDO600-16N1
IXYS

DIODE MODULE 1.6KV 608A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 608A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30mA @ 1600V
  • Capacitance @ Vr, F: 762pF @ 400V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封装: Module
库存2,192
DS17-08A
IXYS

DIODE AVALANCHE 800V 25A DO203AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: DO-203AA, DO-4, Stud
库存6,000
MDA600-18N1
IXYS

DIODE MODULE 1.8KV 883A

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 883A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 18µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存2,032
hot DSP25-16A
IXYS

DIODE ARRAY GP 1600V 28A TO247AD

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 28A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 1600V
  • Operating Temperature - Junction: -40°C ~ 180°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
封装: TO-3P-3 Full Pack
库存96,504
VUC25-16GO2
IXYS

DIODE BRIDGE FAST 1600V KAMM-MOD

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A
  • Current - Reverse Leakage @ Vr: 5mA @ 1600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: KAMM
  • Supplier Device Package: KAMM
封装: KAMM
库存3,328
UGB6124AG
IXYS

IC MOD DIODE 1PHASE BRIDGE UGB1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 10500V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: UGB-1
  • Supplier Device Package: UGB-1
封装: UGB-1
库存4,336
VBO25-12AO2
IXYS

DIODE BRIDGE 31A 1200V AVAL FO-A

  • Diode Type: Single Phase
  • Technology: Avalanche
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 38A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
封装: 4-Square, FO-A
库存3,920
VBO30-08NO7
IXYS

DIODE BRIDGE 35A 800V PWS-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 40µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-A
  • Supplier Device Package: PWS-A
封装: PWS-A
库存2,928
IXDI514D1T/R
IXYS

IC GATE DRIVER SGL 14A 6-DFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4x5)
封装: 6-VDFN Exposed Pad
库存7,264
IXA531S10T/R
IXYS

IC BRIDGE DRVR 3PH 500MA 48-MLP

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 8 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 600mA, 600mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 650V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN
  • Supplier Device Package: 48-MLP
封装: 48-VFQFN
库存5,968
SLMD121H9L
IXYS

MONO SOLAR CELL 62MM X 21MM

  • Power (Watts) - Max: 201mW
  • Current @ Pmpp: 44.6mA
  • Voltage @ Pmpp: 4.5V
  • Current Short Circuit (Isc): 50mA
  • Type: Monocrystalline
  • Voltage - Open Circuit: 5.67V
  • Operating Temperature: -
  • Package / Case: Cell (9)
  • Size / Dimension: -
封装: Cell (9)
库存28,932
MDMA240UB1600ED
IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

  • Diode Type: Three Phase (Braking)
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 240 A
  • Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 240 A
  • Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
封装: -
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IXFA56N30X3
IXYS

MOSFET N-CH 300V 56A TO263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA (IXFA)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存444
DMA30P1600HB
IXYS

DIODE GEN PURP 1.6KV 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 11pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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IXTP48N20TM
IXYS

MOSFET N-CH 200V 48A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封装: -
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