页 160 - IXYS 产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

IXYS 产品

记录 5,468
页  160/183
图片
零件编号
制造商
描述
封装
库存
数量
IXGK120N120B3
IXYS

IGBT 1200V 200A 830W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 370A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 5.5mJ (on), 5.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 36ns/275ns
  • Test Condition: 600V, 100A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封装: TO-264-3, TO-264AA
库存5,888
IXGA20N120
IXYS

IGBT 1200V 40A 150W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 6.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 28ns/400ns
  • Test Condition: 800V, 20A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,920
IXXH60N65C4
IXYS

IGBT 650V 118A 455W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
  • Power - Max: 455W
  • Switching Energy: 3.2mJ (on), 830µJ (off)
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: 37ns/133ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
封装: TO-247-3
库存3,472
IXGK120N120A3
IXYS

IGBT 1200V 240A 830W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 10mJ (on), 33mJ (off)
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 40ns/490ns
  • Test Condition: 960V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封装: TO-264-3, TO-264AA
库存7,296
VIO75-06P1
IXYS

MOD IGBT DIODE SGL 600V ECOPAC2

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 69A
  • Power - Max: 208W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 800µA
  • Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
封装: ECO-PAC2
库存4,928
MWI100-12A8
IXYS

MOD IGBT SIXPACK RBSOA 1200V E3

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 640W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
  • Current - Collector Cutoff (Max): 6.3mA
  • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
封装: E3
库存4,448
MWI50-06A7T
IXYS

MOD IGBT SIXPACK RBSOA 600V E2

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 72A
  • Power - Max: 225W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
封装: E2
库存3,056
MIAA20WD600TMH
IXYS

MODULE IGBT CBI

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 29A
  • Power - Max: 100W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Current - Collector Cutoff (Max): 1.1mA
  • Input Capacitance (Cies) @ Vce: 0.9nF @ 25V
  • Input: Single Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MiniPack2
  • Supplier Device Package: MiniPack2
封装: MiniPack2
库存4,192
IXFC24N50Q
IXYS

MOSFET N-CH ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
封装: ISOPLUS220?
库存3,600
IXFN120N25
IXYS

MOSFET N-CH 250V 120A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存5,760
hot IXTP2N60P
IXYS

MOSFET N-CH 600V 2A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存60,000
IXTA4N150HV
IXYS

MOSFET N-CH 1.5KV 4A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1576pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,240
IXFN55N50F
IXYS

MOSFET N-CH 500V 55A SOT227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存7,648
MCA700-22IO1W
IXYS

SCR THRYRISTOR CA 2200V WC-500

  • Structure: Common Anode - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2200V
  • Current - On State (It (AV)) (Max): 700A
  • Current - On State (It (RMS)) (Max): 1331A
  • Voltage - Gate Trigger (Vgt) (Max): -
  • Current - Gate Trigger (Igt) (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
  • Current - Hold (Ih) (Max): -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: WC-500
封装: WC-500
库存4,064
MCD72-18IO1B
IXYS

MOD THYRISTOR/DIO 1800V TO-240AA

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1800V
  • Current - On State (It (AV)) (Max): 115A
  • Current - On State (It (RMS)) (Max): 180A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封装: TO-240AA
库存6,800
DSA9-18F
IXYS

DIODE AVALANCHE 1.8KV 11A DO203

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 36A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: DO-203AA, DO-4, Stud
库存3,264
DSI30-16AS-TUBE
IXYS

DIODE GEN PURP 1.6KV 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 1600V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,800
DSS10-0045B
IXYS

DIODE SCHOTTKY 45V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2
库存6,032
HTZ250G44K
IXYS

DIODE MODULE 44.8KV 2.7A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 44800V
  • Current - Average Rectified (Io) (per Diode): 2.7A
  • Voltage - Forward (Vf) (Max) @ If: 32V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 44800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存2,176
DPG120C300QB
IXYS

DIODE ARRAY GP 300V 60A TO3P

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存4,272
DSSK40-006B
IXYS

DIODE ARRAY SCHOTTKY 60V TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 60V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
封装: TO-3P-3 Full Pack
库存7,376
VBO13-16NO2
IXYS

BRIDGE RECT SGL PHASE 1600V 18A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
封装: 4-Square, FO-A
库存3,968
hot IXDP630PI
IXYS

IC INVERTER INTERFACE 18-DIP

  • Applications: PWM Motor Controller
  • Interface: Microprocessor
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
  • Mounting Type: Through Hole
封装: 18-DIP (0.300", 7.62mm)
库存15,108
MCMA200PD1600YB
IXYS

DUAL THYRISTOR/DIODE Y4

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 200 A
  • Current - On State (It (RMS)) (Max): 315 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: -
库存3
CMA80MT1600NHR
IXYS

TRIAC 1.6KV 88A ISO247

  • Triac Type: Standard
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (RMS)) (Max): 88 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.7 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
  • Current - Gate Trigger (Igt) (Max): 70 mA
  • Current - Hold (Ih) (Max): 70 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
封装: -
Request a Quote
IXYP30N65C3
IXYS

DISC IGBT XPT-GENX3 TO-220AB/FP

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 118 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 270 W
  • Switching Energy: 1mJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 21ns/75ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: -
Request a Quote
DCG17P1200HR
IXYS

DIODE SCHOTTKY 1.2KV 18A ISO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
LSIC2SD120N80PA
IXYS

DIODE MOD SIC 1200V 75A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 75A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B - miniBLOC
封装: -
Request a Quote
DMA200XA1600NA
IXYS

DIODE MOD GP 1600V 100A SOT227B

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: -
Request a Quote
IXFH1826
IXYS

MOSFET N-CH 18A TO247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote