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IXYS |
IGBT 1200V 70A 300W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
- Power - Max: 300W
- Switching Energy: 5mJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: 36ns/160ns
- Test Condition: 960V, 35A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,280 |
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IXYS |
IGBT 600V 75A 540W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 360A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Power - Max: 540W
- Switching Energy: 1.03mJ (on), 480µJ (off)
- Input Type: Standard
- Gate Charge: 174nC
- Td (on/off) @ 25°C: 27ns/77ns
- Test Condition: 480V, 50A, 2 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存5,248 |
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IXYS |
IGBT MODULE 1200V 12A HEX
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 17A
- Power - Max: 63W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MiniPack2
- Supplier Device Package: MiniPack2
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封装: MiniPack2 |
库存6,192 |
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IXYS |
MOSFET N-CH 600V 30A PLUS220-SMD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PLUS-220SMD
- Package / Case: PLUS-220SMD
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封装: PLUS-220SMD |
库存3,856 |
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IXYS |
MOSFET N-CH 1200V 0.8A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,088 |
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IXYS |
2000V TO 3000V POLAR3 POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 3000V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247HV
- Package / Case: TO-247-3 Variant
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封装: TO-247-3 Variant |
库存5,104 |
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IXYS |
MOD THYRISTOR 1400V 130A ECOPAC2
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 200A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 3600A, 3850A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 130°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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封装: ECO-PAC2 |
库存7,040 |
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IXYS |
MOD THYRISTOR DUAL 1600V Y1-CU
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 221A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
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封装: Y1-CU |
库存7,328 |
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IXYS |
RECT BRIDGE 1PH 1400V FO-T-A
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
- Number of SCRs, Diodes: 2 SCRs, 2 Diodes
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 53A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
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封装: FO-T-A |
库存6,032 |
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IXYS |
MODULE AC CONTROL 1400V ECO-PAC2
- Structure: 1-Phase Controller - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 105A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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封装: Module |
库存7,152 |
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IXYS |
THYRISTOR MODULE 1600V 2X32A
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 32A
- Current - On State (It (RMS)) (Max): 50A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存6,912 |
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IXYS |
DIODE ARRAY GP 400V 10A TO263
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.32V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,232 |
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IXYS |
DIODE BRIDGE 1200V 55A FO-T-A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 55A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
- Supplier Device Package: FO-T-A
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封装: FO-T-A |
库存6,816 |
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IXYS |
IC MOD DIODE 1PHASE BRIDGE UGB1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 4800V
- Current - Average Rectified (Io): 1.3A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: UGB-1
- Supplier Device Package: UGB-1
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封装: UGB-1 |
库存4,800 |
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IXYS |
DIODE BRIDGE 1800V 65A FO-T-A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 65A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
- Supplier Device Package: FO-T-A
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封装: FO-T-A |
库存7,872 |
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IXYS |
RECT BRIDGE 3PH 25A 800V V1-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.19V @ 10A
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1-A
- Supplier Device Package: V1-A
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封装: V1-A |
库存6,608 |
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IXYS |
IC GATE DRIVER DUAL 2A 6-DFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (4x5)
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封装: 6-VDFN Exposed Pad |
库存4,656 |
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IXYS |
IC DRIVER HALF BRDG 600MA 8DIP
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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封装: 8-DIP (0.300", 7.62mm) |
库存5,728 |
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IXYS |
SCR MODULE 1.6KV 110A MODULE
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 110 A
- Current - On State (It (RMS)) (Max): 170 A
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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封装: - |
Request a Quote |
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IXYS |
SCR 400V 1713A W58
- Voltage - Off State: 400 V
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 200 mA
- Voltage - On State (Vtm) (Max): 1.47 V
- Current - On State (It (AV)) (Max): 848 A
- Current - On State (It (RMS)) (Max): 1713 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 50 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W58
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封装: - |
Request a Quote |
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IXYS |
DIODE MOD GP 2.2KV 90A SOT227B
- Diode Configuration: 2 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io) (per Diode): 90A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 2200 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 1000V 100MA TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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封装: - |
库存73,188 |
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IXYS |
IXFP16N85XM
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
Request a Quote |
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IXYS |
SCR 2.6KV 2912A W11
- Voltage - Off State: 2.6 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 1.69 V
- Current - On State (It (AV)) (Max): 1467 A
- Current - On State (It (RMS)) (Max): 2912 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 23600A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W11
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 2.8KV 3842A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2800 V
- Current - Average Rectified (Io): 3842A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 34 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 160°C
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封装: - |
Request a Quote |
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IXYS |
DISC IGBT XPT-GENX3 TO-264(3)
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 600 A
- Current - Collector Pulsed (Icm): 1460 A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
- Power - Max: 2300 W
- Switching Energy: 7.8mJ (on), 4.7mJ (off)
- Input Type: Standard
- Gate Charge: 565 nC
- Td (on/off) @ 25°C: 42ns/190ns
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 125 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: PLUS264™
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封装: - |
Request a Quote |
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IXYS |
SCR 1.2KV 1169A W58
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 200 mA
- Voltage - On State (Vtm) (Max): 2.15 V
- Current - On State (It (AV)) (Max): 577 A
- Current - On State (It (RMS)) (Max): 1169 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 60 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W58
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封装: - |
Request a Quote |
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IXYS |
SCR 1.8KV 8545A W81
- Voltage - Off State: 1.8 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.12 V
- Current - On State (It (AV)) (Max): 4340 A
- Current - On State (It (RMS)) (Max): 8545 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 200 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 60500A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AF
- Supplier Device Package: W81
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO263AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
- Operating Temperature - Junction: -55°C ~ 150°C
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封装: - |
库存1,824 |
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IXYS |
SCR 1.2KV 63A TO263
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.7 V
- Current - Gate Trigger (Igt) (Max): 30 mA
- Voltage - On State (Vtm) (Max): 1.3 V
- Current - On State (It (AV)) (Max): 40 A
- Current - On State (It (RMS)) (Max): 63 A
- Current - Hold (Ih) (Max): 70 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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封装: - |
Request a Quote |
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