页 89 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  89/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IXGH24N60BU1
IXYS

IGBT 600V 48A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 600µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存116,400
600V
48A
96A
2.3V @ 15V, 24A
150W
600µJ (on), 800µJ (off)
Standard
90nC
25ns/150ns
480V, 24A, 10 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGR40N60B2D1
IXYS

IGBT 600V 60A 167W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 167W
  • Switching Energy: 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 18ns/130ns
  • Test Condition: 400V, 30A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存6,416
600V
60A
200A
1.9V @ 15V, 30A
167W
400µJ (off)
Standard
100nC
18ns/130ns
400V, 30A, 3.3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
FGPF30N30DTU
Fairchild/ON Semiconductor

IGBT 300V 46W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A
  • Power - Max: 46W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 39nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封装: TO-220-3 Full Pack
库存6,032
300V
-
80A
1.5V @ 15V, 10A
46W
-
Standard
39nC
-
-
21ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot SGF23N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 23A 75W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 75W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
封装: SC-94
库存2,000
600V
23A
92A
2.6V @ 15V, 12A
75W
115µJ (on), 135µJ (off)
Standard
49nC
17ns/60ns
300V, 12A, 23 Ohm, 15V
60ns
-
Through Hole
SC-94
TO-3PF
IRGS10B60KDTRRP
Infineon Technologies

IGBT 600V 22A 156W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 156W
  • Switching Energy: 140µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 30ns/230ns
  • Test Condition: 400V, 10A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,496
600V
22A
44A
2.2V @ 15V, 10A
156W
140µJ (on), 250µJ (off)
Standard
38nC
30ns/230ns
400V, 10A, 47 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGF20N300
IXYS

IGBT 3000V 22A 100W I4-PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 103A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 31nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5 (3 leads)
库存4,656
3000V
22A
103A
3.2V @ 15V, 20A
100W
-
Standard
31nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
IXGX300N60B3
IXYS

IGBT 600V 1000W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,736
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGK72N60B3H1
IXYS

IGBT 600V 75A 540W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 450A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
  • Power - Max: 540W
  • Switching Energy: 1.4mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 31ns/152ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封装: TO-264-3, TO-264AA
库存5,616
600V
75A
450A
1.8V @ 15V, 60A
540W
1.4mJ (on), 1mJ (off)
Standard
225nC
31ns/152ns
480V, 50A, 3 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXGR32N90B2D1
IXYS

IGBT 900V 47A 160W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 47A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
  • Power - Max: 160W
  • Switching Energy: 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 89nC
  • Td (on/off) @ 25°C: 20ns/260ns
  • Test Condition: 720V, 32A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 190ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存6,192
900V
47A
200A
2.9V @ 15V, 32A
160W
2.2mJ (off)
Standard
89nC
20ns/260ns
720V, 32A, 5 Ohm, 15V
190ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGH6N170
IXYS

IGBT 1700V 12A 75W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
  • Power - Max: 75W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 20nC
  • Td (on/off) @ 25°C: 40ns/250ns
  • Test Condition: 1360V, 6A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存5,760
1700V
12A
24A
4V @ 15V, 6A
75W
1.5mJ (off)
Standard
20nC
40ns/250ns
1360V, 6A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGP20N120BD1
IXYS

IGBT 1200V 40A 190W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 190W
  • Switching Energy: 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 72nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存2,640
1200V
40A
100A
3.4V @ 15V, 20A
190W
2.1mJ (off)
Standard
72nC
25ns/150ns
960V, 20A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTD17T65F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存4,880
650V
-
160A
2V @ 15V, 40A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
STGB6M65DF2
STMicroelectronics

IGBT TRENCH 650V 12A D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 88W
  • Switching Energy: 36µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 21.2nC
  • Td (on/off) @ 25°C: 15ns/90ns
  • Test Condition: 400V, 6A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,664
650V
12A
24A
2V @ 15V, 6A
88W
36µJ (on), 200µJ (off)
Standard
21.2nC
15ns/90ns
400V, 6A, 22 Ohm, 15V
140ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGP4066DPBF
Infineon Technologies

IGBT 600V 140A 454W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 454W
  • Switching Energy: 2.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 155ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存30,600
600V
140A
225A
2.1V @ 15V, 75A
454W
2.47mJ (on), 2.16mJ (off)
Standard
150nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
155ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot APT20GT60BRDQ1G
Microsemi Corporation

IGBT 600V 43A 174W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 174W
  • Switching Energy: 215µJ (on), 245µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 8ns/80ns
  • Test Condition: 400V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存20,400
600V
43A
80A
2.5V @ 15V, 20A
174W
215µJ (on), 245µJ (off)
Standard
100nC
8ns/80ns
400V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IKW50N65ES5XKSA1
Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 274W
  • Switching Energy: 1.23mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 20ns/127ns
  • Test Condition: 400V, 50A, 8.2 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存6,624
650V
80A
200A
1.7V @ 15V, 50A
274W
1.23mJ (on), 550µJ (off)
Standard
120nC
20ns/127ns
400V, 50A, 8.2 Ohm, 15V
70ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
FGB20N60SF
Fairchild/ON Semiconductor

IGBT 600V 40A 208W D2PAK

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 208W
  • Switching Energy: 370µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 13ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,344
600V
40A
60A
2.8V @ 15V, 20A
208W
370µJ (on), 160µJ (off)
Standard
65nC
13ns/90ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGD4M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 16A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 68W
  • Switching Energy: 40µJ (on), 136µJ (off)
  • Input Type: Standard
  • Gate Charge: 15.2nC
  • Td (on/off) @ 25°C: 12ns/86ns
  • Test Condition: 400V, 4A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 133ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,344
650V
8A
16A
2.1V @ 15V, 4A
68W
40µJ (on), 136µJ (off)
Standard
15.2nC
12ns/86ns
400V, 4A, 47 Ohm, 15V
133ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
NTE3310
NTE Electronics, Inc

IGBT-N-CHAN ENHANCEMENT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 15A
  • Power - Max: 100 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 400ns/500ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: -
Request a Quote
600 V
15 A
30 A
4V @ 15V, 15A
100 W
-
Standard
-
400ns/500ns
-
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
SIGC14T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 15A, 18Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
21ns/110ns
300V, 15A, 18Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
STGWA75H65DFB2
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 7

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 115 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 357 W
  • Switching Energy: 1.428mJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 207 nC
  • Td (on/off) @ 25°C: 28ns/100ns
  • Test Condition: 400V, 75A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): 88 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: -
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650 V
115 A
225 A
2V @ 15V, 75A
357 W
1.428mJ (on), 1.05mJ (off)
Standard
207 nC
28ns/100ns
400V, 75A, 2.2Ohm, 15V
88 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
RGWS60TS65GC13
Rohm Semiconductor

IGBT TRENCH FS 650V 51A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 51 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 156 W
  • Switching Energy: 500µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 32ns/91ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
封装: -
库存1,800
650 V
51 A
90 A
2V @ 15V, 30A
156 W
500µJ (on), 450µJ (off)
Standard
58 nC
32ns/91ns
400V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
FGB3040G2-F085C
onsemi

IGBT 400V 41A TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 900ns/4.8µs
  • Test Condition: 5V, 470Ohm
  • Reverse Recovery Time (trr): 1.9 µs
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
库存1,641
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
900ns/4.8µs
5V, 470Ohm
1.9 µs
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXYA30N120A3HV
IXYS

IGBT DISCRETE TO-263HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGHL40T120RWD
onsemi

IGBT FIELD STOP 1200V 80A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40.3A
  • Power - Max: 600 W
  • Switching Energy: 2.9mJ (on), 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 174 nC
  • Td (on/off) @ 25°C: 38ns/184ns
  • Test Condition: 600V, 40A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 248 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
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1200 V
80 A
120 A
1.8V @ 15V, 40.3A
600 W
2.9mJ (on), 2.1mJ (off)
Standard
174 nC
38ns/184ns
600V, 40A, 4.7Ohm, 15V
248 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGW80TK65DGVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 39A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 39 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 81 W
  • Switching Energy: 760µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 44ns/143ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: -
库存1,320
650 V
39 A
160 A
1.9V @ 15V, 40A
81 W
760µJ (on), 720µJ (off)
Standard
110 nC
44ns/143ns
400V, 40A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
SIGC81T60NCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 95ns/200ns
  • Test Condition: 300V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
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600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
95ns/200ns
300V, 100A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
ISL9V3036S3ST-F085C
onsemi

IGBT 360V 21A TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360 V
  • Current - Collector (Ic) (Max): 21 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17 nC
  • Td (on/off) @ 25°C: 700ns/4.8µs
  • Test Condition: -
  • Reverse Recovery Time (trr): 2.1 µs
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
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360 V
21 A
-
1.6V @ 4V, 6A
150 W
-
Logic
17 nC
700ns/4.8µs
-
2.1 µs
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
RGTH00TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 85A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 277 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 54 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
封装: -
库存1,779
650 V
85 A
200 A
2.1V @ 15V, 50A
277 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
54 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
SIGC28T60EX1SA3
Infineon Technologies

IGBT TRENCH FS 600V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
50 A
150 A
1.85V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die