页 87 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  87/148
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零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGIB4615DPBF
Infineon Technologies

IGBT 600V FULLPAK220 COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: 145µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封装: TO-220-3 Full Pack
库存5,840
600V
15A
-
-
-
145µJ (on), 70µJ (off)
Standard
-
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220FP
IRGP4078DPBF
Infineon Technologies

IGBT 600V 74A 278W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 278W
  • Switching Energy: 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 92nC
  • Td (on/off) @ 25°C: -/116ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存3,792
600V
74A
150A
2.2V @ 15V, 50A
278W
1.1mJ (off)
Standard
92nC
-/116ns
400V, 50A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
SKP10N60AXKSA1
Infineon Technologies

IGBT 600V 20A 92W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Power - Max: 92W
  • Switching Energy: 320µJ
  • Input Type: Standard
  • Gate Charge: 52nC
  • Td (on/off) @ 25°C: 28ns/178ns
  • Test Condition: 400V, 10A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 220ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3
库存3,968
600V
20A
40A
2.4V @ 15V, 10A
92W
320µJ
Standard
52nC
28ns/178ns
400V, 10A, 25 Ohm, 15V
220ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IRG4RC10UTR
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存912,000
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
RJH60D1DPP-E0#T2
Renesas Electronics America

IGBT 600V 10A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 30W
  • Switching Energy: 100µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 30ns/42ns
  • Test Condition: 300V, 10A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封装: TO-220-3 Full Pack
库存5,792
600V
20A
-
2.5V @ 15V, 10A
30W
100µJ (on), 130µJ (off)
Standard
13nC
30ns/42ns
300V, 10A, 5 Ohm, 15V
70ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
APT50GP60LDLG
Microsemi Corporation

IGBT 600V 150A 625W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 190A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 625W
  • Switching Energy: 456µJ (on), 635µJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 19ns/85ns
  • Test Condition: 400V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封装: TO-264-3, TO-264AA
库存6,432
600V
150A
190A
2.7V @ 15V, 50A
625W
456µJ (on), 635µJ (off)
Standard
165nC
19ns/85ns
400V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IXGQ50N60B4D1
IXYS

IGBT 600V 100A 300W TO3P

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
  • Power - Max: 300W
  • Switching Energy: 930µJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 37ns/330ns
  • Test Condition: 400V, 36A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存2,000
600V
100A
230A
1.8V @ 15V, 36A
300W
930µJ (on), 1mJ (off)
Standard
110nC
37ns/330ns
400V, 36A, 10 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGP24N60C4
IXYS

IGBT 600V 56A 190W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 21ns/143ns
  • Test Condition: 360V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存3,936
600V
56A
130A
2.7V @ 15V, 24A
190W
400µJ (on), 300µJ (off)
Standard
64nC
21ns/143ns
360V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGH40N60B
IXYS

IGBT 600V 75A 250W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250W
  • Switching Energy: 2.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 25ns/180ns
  • Test Condition: 480V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存4,912
600V
75A
150A
2.1V @ 15V, 40A
250W
2.7mJ (off)
Standard
116nC
25ns/180ns
480V, 40A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
STGF12NB60KD
STMicroelectronics

IGBT 600V 14A 30W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
  • Power - Max: 30W
  • Switching Energy: 152µJ (on), 258µJ (off)
  • Input Type: Standard
  • Gate Charge: 54nC
  • Td (on/off) @ 25°C: 25ns/96ns
  • Test Condition: 480V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封装: TO-220-3 Full Pack
库存3,328
600V
14A
60A
2.8V @ 15V, 12A
30W
152µJ (on), 258µJ (off)
Standard
54nC
25ns/96ns
480V, 12A, 10 Ohm, 15V
37ns
-
Through Hole
TO-220-3 Full Pack
TO-220FP
hot IXSH30N60BD1
IXYS

IGBT 600V 55A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
  • Power - Max: 200W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 30ns/150ns
  • Test Condition: 480V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
封装: TO-247-3
库存390,000
600V
55A
110A
2.7V @ 15V, 55A
200W
1.5mJ (off)
Standard
100nC
30ns/150ns
480V, 30A, 4.7 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
IXEH25N120
IXYS

IGBT 1200V 36A 200W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
  • Power - Max: 200W
  • Switching Energy: 4.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 20A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
封装: TO-3P-3 Full Pack
库存2,624
1200V
36A
-
3.2V @ 15V, 25A
200W
4.1mJ (on), 1.5mJ (off)
Standard
100nC
-
600V, 20A, 68 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-247AD
hot IRGS6B60KTRLPBF
Infineon Technologies

IGBT 600V 13A 90W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存105,600
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXBT42N300HV
IXYS

IGBT 3000V 42A 357W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 104A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
  • Power - Max: 500W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 72ns/445ns
  • Test Condition: 1500V, 42A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存2,048
3000V
104A
400A
3V @ 15V, 42A
500W
-
Standard
200nC
72ns/445ns
1500V, 42A, 20 Ohm, 15V
1.7µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
AOK20B60D1
Alpha & Omega Semiconductor Inc.

IGBT 600V 40A 180W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 74A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 760µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 24.6nC
  • Td (on/off) @ 25°C: 20ns/66ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 107ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存3,632
600V
40A
74A
2.4V @ 15V, 20A
167W
760µJ (on), 180µJ (off)
Standard
24.6nC
20ns/66ns
400V, 20A, 15 Ohm, 15V
107ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
APT40GR120S
Microsemi Corporation

IGBT 1200V 88A 500W D3PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 88A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 1.38mJ (on), 906µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 22ns/163ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D3Pak
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,536
1200V
88A
160A
3.2V @ 15V, 40A
500W
1.38mJ (on), 906µJ (off)
Standard
210nC
22ns/163ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D3Pak
STGWA80H65DFB
STMicroelectronics

IGBT BIPO 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 414nC
  • Td (on/off) @ 25°C: 84ns/280ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: TO-247-3
库存6,516
650V
120A
240A
2V @ 15V, 80A
469W
2.1mJ (on), 1.5mJ (off)
Standard
414nC
84ns/280ns
400V, 80A, 10 Ohm, 15V
85ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IKW40N65ES5XKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 79A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
  • Power - Max: 230W
  • Switching Energy: 860µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/130ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 73ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存7,104
650V
79A
160A
1.7V @ 15V, 40A
230W
860µJ (on), 400µJ (off)
Standard
95nC
19ns/130ns
400V, 40A, 10 Ohm, 15V
73ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
STGF7NB60SL
STMicroelectronics

IGBT 600V 15A 25W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4.5V, 7A
  • Power - Max: 25W
  • Switching Energy: 4.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 16nC
  • Td (on/off) @ 25°C: 1.1µs/5.2µs
  • Test Condition: 480V, 7A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封装: TO-220-3 Full Pack
库存55,098
600V
15A
20A
1.6V @ 4.5V, 7A
25W
4.1mJ (off)
Standard
16nC
1.1µs/5.2µs
480V, 7A, 1 kOhm, 5V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
IXBL60N360
IXYS

IGBT 3600V 92A ISOPLUS I5PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3600V
  • Current - Collector (Ic) (Max): 92A
  • Current - Collector Pulsed (Icm): 720A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 60A
  • Power - Max: 417W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 450nC
  • Td (on/off) @ 25°C: 50ns/340ns
  • Test Condition: 960V, 60A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 1.95µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-Pak?
  • Supplier Device Package: ISOPLUSi5-Pak?
封装: ISOPLUSi5-Pak?
库存6,272
3600V
92A
720A
3.4V @ 15V, 60A
417W
-
Standard
450nC
50ns/340ns
960V, 60A, 4.7 Ohm, 15V
1.95µs
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUSi5-Pak?
ISOPLUSi5-Pak?
FGY160T65SPD-F085
onsemi

650V FS GEN3 TRENCH IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 240 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
  • Power - Max: 882 W
  • Switching Energy: 12.4mJ (on), 5.7mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 53ns/98ns
  • Test Condition: 400V, 160A, 15V
  • Reverse Recovery Time (trr): 132 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
库存1,050
650 V
240 A
480 A
2.05V @ 15V, 160A
882 W
12.4mJ (on), 5.7mJ (off)
Standard
-
53ns/98ns
400V, 160A, 15V
132 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIGC25T60NCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 30A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
21ns/110ns
300V, 30A, 8.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
LGB8204ATH
IXYS

D2PAK, IGBT3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430 V
  • Current - Collector (Ic) (Max): 18 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
  • Power - Max: 115 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: -
Request a Quote
430 V
18 A
50 A
2V @ 4.5V, 10A
115 W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
AIGB30N65H5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封装: -
Request a Quote
650 V
30 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
PCFF15H60W
onsemi

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGC35B60PB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
-
-
1.7V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
FGF65A4H
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/40

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.37V @ 15V, 40A
  • Power - Max: 72 W
  • Switching Energy: 700µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 40ns/100ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封装: -
Request a Quote
650 V
65 A
120 A
2.37V @ 15V, 40A
72 W
700µJ (on), 600µJ (off)
Standard
75 nC
40ns/100ns
400V, 40A, 10Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
MIW50N65RA-BP
Micro Commercial Co

IGBT TRENCH FS 650V 100A TO247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Power - Max: 357 W
  • Switching Energy: 1.49mJ (on), 670µJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: 28ns/129ns
  • Test Condition: 300V, 50A, 20Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB
封装: -
Request a Quote
650 V
100 A
200 A
2.4V @ 15V, 50A
357 W
1.49mJ (on), 670µJ (off)
Standard
210 nC
28ns/129ns
300V, 50A, 20Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AB
SIGC42T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 43ns/130ns
  • Test Condition: 300V, 50A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
43ns/130ns
300V, 50A, 3.3Ohm, 15V
-
-55°C ~ 150°C
Surface Mount
Die
Die
KGF65A4L
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/40

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 40A
  • Power - Max: 288 W
  • Switching Energy: 900µJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 40ns/100ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
650 V
65 A
120 A
1.96V @ 15V, 40A
288 W
900µJ (on), 900µJ (off)
Standard
75 nC
40ns/100ns
400V, 40A, 10Ohm, 15V
60 ns
175°C (TJ)
Through Hole
TO-247-3
TO-247-3