晶体管 - UGBT，MOSFET - 单

IRGI4086PBF

Infineon Technologies

IGBT 300V 25A 43W TO220AB

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
• Power - Max: 43W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 36ns/112ns
• Test Condition: 196V, 25A, 10 Ohm
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

封装: TO-220-3 Full Pack

IRG4BC30K-STRRP

Infineon Technologies

IGBT 600V 28A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 56A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
• Power - Max: 100W
• Switching Energy: 360µJ (on), 510µJ (off)
• Input Type: Standard
• Gate Charge: 67nC
• Td (on/off) @ 25°C: 26ns/130ns
• Test Condition: 480V, 16A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXSR50N60BU1

IXYS

IGBT 600V ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

封装: ISOPLUS247?

IXSH30N60U1

IXYS

IGBT 600V 50A 200W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 2.5mJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 60ns/400ns
• Test Condition: 480V, 30A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

封装: TO-247-3

MGP15N40CL

ON Semiconductor

IGBT 440V 15A 150W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/4µs
• Test Condition: 300V, 6.5A, 1 kOhm
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IXGH32N60CD1

IXYS

IGBT 600V 60A 200W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
• Power - Max: 200W
• Switching Energy: 320µJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 25ns/85ns
• Test Condition: 480V, 32A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

IGB15N65S5ATMA1

Infineon Technologies

IGBT PRODUCTS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IXGT30N120BD1

IXYS

IGBT 1200V TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGH15N120B

IXYS

IGBT 1200V 30A 180W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
• Power - Max: 180W
• Switching Energy: 1.75mJ (off)
• Input Type: Standard
• Gate Charge: 69nC
• Td (on/off) @ 25°C: 25ns/180ns
• Test Condition: 960V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

GPA060A060MN-FD

Global Power Technologies Group

IGBT 600V 120A 347W TO3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 347W
• Switching Energy: 2.66mJ (on), 1.53mJ (off)
• Input Type: Standard
• Gate Charge: 225nC
• Td (on/off) @ 25°C: 45ns/150ns
• Test Condition: 400V, 60A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3
• Supplier Device Package: TO-3PN

封装: TO-3

IXYH24N170CV1

IXYS

IGBT 1.7KV 58A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 58A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A
• Power - Max: 500W
• Switching Energy: 3.6mJ (on), 1.76mJ (off)
• Input Type: Standard
• Gate Charge: 96nC
• Td (on/off) @ 25°C: 16ns/155ns
• Test Condition: 850V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封装: TO-247-3

IRG4IBC20KDPBF

Infineon Technologies

IGBT 600V 11.5A 34W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11.5A
• Current - Collector Pulsed (Icm): 23A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
• Power - Max: 34W
• Switching Energy: 340µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: 54ns/180ns
• Test Condition: 480V, 9A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

封装: TO-220-3 Full Pack

IXXX110N65B4H1

IXYS

IGBT 650V 240A 880W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 240A
• Current - Collector Pulsed (Icm): 630A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
• Power - Max: 880W
• Switching Energy: 2.2mJ (on), 1.05mJ (off)
• Input Type: Standard
• Gate Charge: 183nC
• Td (on/off) @ 25°C: 38ns/156ns
• Test Condition: 400V, 55A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

封装: TO-247-3

STGW25M120DF3

STMicroelectronics

IGBT 1200V 50A 375W

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
• Power - Max: 375W
• Switching Energy: 850µJ (on), 1.3mJ (off)
• Input Type: Standard
• Gate Charge: 85nC
• Td (on/off) @ 25°C: 28ns/150ns
• Test Condition: 600V, 25A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 265ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IRGB4630DPBF

Infineon Technologies

IGBT 600V 47A 206W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 47A
• Current - Collector Pulsed (Icm): 54A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
• Power - Max: 206W
• Switching Energy: 95µJ (on), 350µJ (off)
• Input Type: Standard
• Gate Charge: 35nC
• Td (on/off) @ 25°C: 40ns/105ns
• Test Condition: 400V, 18A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AC

封装: TO-220-3

IXEL40N400

IXYS

IGBT 4000V 90A 380W ISOPLUSI5

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 4000V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 400A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
• Power - Max: 380W
• Switching Energy: 55mJ (on), 165mJ (off)
• Input Type: Standard
• Gate Charge: 275nC
• Td (on/off) @ 25°C: 160ns/630ns
• Test Condition: 2800V, 40A, 33 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUSi5-Pak?
• Supplier Device Package: ISOPLUSi5-Pak?

封装: ISOPLUSi5-Pak?

IHW40N135R5XKSA1

Infineon Technologies

IGBT TRENCH FS 1350V 80A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1350 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
• Power - Max: 394 W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 305 nC
• Td (on/off) @ 25°C: -/410ns
• Test Condition: 600V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: -

LGD8201ATI

Littelfuse Inc.

IGBT 440V 20A TO252

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 50 A
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: 125 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: 1.5µs/8µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

封装: -

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DF400R07W2S5FB77BPSA1

Infineon Technologies

LOW POWER EASY

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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HGTG40N60C3

Harris Corporation

75A, 600V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
• Power - Max: 291 W
• Switching Energy: 850mJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 395 nC
• Td (on/off) @ 25°C: 47ns/185ns
• Test Condition: 480V, 40A, 3Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: -

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RGCL60TS60GC11

Rohm Semiconductor

IGBT TRNCH FIELD 600V 48A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 48 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
• Power - Max: 111 W
• Switching Energy: 770µJ (on), 1.11mJ (off)
• Input Type: Standard
• Gate Charge: 68 nC
• Td (on/off) @ 25°C: 44ns/186ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: -

NCG100F475NF120

onsemi

IGBT 500V 100A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IRG4BC40UPBF-INF

Infineon Technologies

ULTRAFAST SPEED IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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STGW100H65FB2-4

STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 1

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 145 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
• Power - Max: 441 W
• Switching Energy: 1.06mJ (on), 1.14mJ (off)
• Input Type: Standard
• Gate Charge: 288 nC
• Td (on/off) @ 25°C: 23ns/141ns
• Test Condition: 400V, 100A, 3.3Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: TO-247-4

封装: -

IKW30N65ET7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 30A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
• Power - Max: 188 W
• Switching Energy: 590µJ (on), 500µJ (off)
• Input Type: Standard
• Gate Charge: 180 nC
• Td (on/off) @ 25°C: 20ns/245ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): 80 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: -

AOB15B65MQ1

Alpha & Omega Semiconductor Inc.

IGBT 15A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
• Power - Max: 214 W
• Switching Energy: 290µJ (on), 200µJ (off)
• Input Type: Standard
• Gate Charge: 32 nC
• Td (on/off) @ 25°C: 15ns/94ns
• Test Condition: 400V, 15A, 20Ohm, 15V
• Reverse Recovery Time (trr): 106 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

封装: -

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MIW50N65F-BP

Micro Commercial Co

IGBT 650V 40A TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 85 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
• Power - Max: 326 W
• Switching Energy: 1.27mJ (on), 650µJ (off)
• Input Type: Standard
• Gate Charge: 450 nC
• Td (on/off) @ 25°C: 55ns/319ns
• Test Condition: 300V, 50A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AB

封装: -

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KGF65A6L

Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/60

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 180 A
• Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 60A
• Power - Max: 405 W
• Switching Energy: 1.7mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 110 nC
• Td (on/off) @ 25°C: 50ns/130ns
• Test Condition: 400V, 60A, 10Ohm, 15V
• Reverse Recovery Time (trr): 65 ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: -

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HGT1S7N60B3D

Harris Corporation

IGBT 600V 14A TO262

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 14 A
• Current - Collector Pulsed (Icm): 56 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
• Power - Max: 60 W
• Switching Energy: 160µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 30 nC
• Td (on/off) @ 25°C: 26ns/130ns
• Test Condition: 480V, 7A, 50Ohm, 15V
• Reverse Recovery Time (trr): 21 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
• Supplier Device Package: TO-262 (I2PAK)

封装: -

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SIGC15T60EX1SA4

Infineon Technologies

IGBT TRENCH FS 600V 30A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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