页 5 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  5/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P45N65UD1PBF
Infineon Technologies

G8 650V 45A CO-PAK-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,352
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG7CH28UEF
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 60nC
  • Td (on/off) @ 25°C: 35ns/225ns
  • Test Condition: 600V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存7,888
1200V
-
-
1.55V @ 15V, 2.5A
-
-
Standard
60nC
35ns/225ns
600V, 15A, 22 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRG7PH50K10DPBF
Infineon Technologies

IGBT 1200V 90A 400W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
  • Power - Max: 400W
  • Switching Energy: 2.3mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 300nC
  • Td (on/off) @ 25°C: 90ns/340ns
  • Test Condition: 600V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存5,840
1200V
90A
160A
2.4V @ 15V, 35A
400W
2.3mJ (on), 1.6mJ (off)
Standard
300nC
90ns/340ns
600V, 35A, 5 Ohm, 15V
130ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGS4086PBF
Infineon Technologies

IGBT 300V 70A 160W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/112ns
  • Test Condition: 196V, 25A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存35,400
300V
70A
-
2.96V @ 15V, 120A
160W
-
Standard
65nC
36ns/112ns
196V, 25A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
SGP20N60XKSA1
Infineon Technologies

IGBT 600V 40A 179W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 179W
  • Switching Energy: 440µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 36ns/225ns
  • Test Condition: 400V, 20A, 16 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3
库存4,624
600V
40A
80A
2.4V @ 15V, 20A
179W
440µJ (on), 330µJ (off)
Standard
100nC
36ns/225ns
400V, 20A, 16 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRG4PH40K
Infineon Technologies

IGBT 1200V 30A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
  • Power - Max: 160W
  • Switching Energy: 730µJ (on), 1.66mJ (off)
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: 30ns/200ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存6,656
1200V
30A
60A
3.4V @ 15V, 15A
160W
730µJ (on), 1.66mJ (off)
Standard
94nC
30ns/200ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
NGTB20N120IHLWG
ON Semiconductor

IGBT 1200V 40A 192W TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 192W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: -/235ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存6,144
1200V
40A
200A
2.2V @ 15V, 20A
192W
700µJ (off)
Standard
200nC
-/235ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGT28N60B
IXYS

IGBT 600V 40A 150W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
  • Power - Max: 150W
  • Switching Energy: 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 15ns/175ns
  • Test Condition: 480V, 28A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存6,352
600V
40A
80A
2V @ 15V, 28A
150W
2mJ (off)
Standard
68nC
15ns/175ns
480V, 28A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
STGW33IH120D
STMicroelectronics

IGBT 1200V 60A 220W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 1.5mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 127nC
  • Td (on/off) @ 25°C: 46ns/284ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: TO-247-3
库存3,856
1200V
60A
45A
2.8V @ 15V, 20A
220W
1.5mJ (on), 3.4mJ (off)
Standard
127nC
46ns/284ns
960V, 20A, 10 Ohm, 15V
85ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot ISL9V3036S3S
Fairchild/ON Semiconductor

IGBT 360V 21A 150W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存432,816
360V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
AUIRGP65G40D0
Infineon Technologies

IGBT 600V 62A 625W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 62A
  • Current - Collector Pulsed (Icm): 84A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 625W
  • Switching Energy: 298µJ (on), 147µJ (off)
  • Input Type: Standard
  • Gate Charge: 270nC
  • Td (on/off) @ 25°C: 35ns/142ns
  • Test Condition: 400V, 20A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存3,040
600V
62A
84A
2.2V @ 15V, 20A
625W
298µJ (on), 147µJ (off)
Standard
270nC
35ns/142ns
400V, 20A, 4.7 Ohm, 15V
41ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
SGD02N60BUMA1
Infineon Technologies

IGBT 600V 6A 30W TO252-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,608
600V
6A
12A
2.4V @ 15V, 2A
30W
64µJ
Standard
14nC
20ns/259ns
400V, 2A, 118 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXGX32N170H1
IXYS

IGBT 1700V 75A 350W PLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350W
  • Switching Energy: 15mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1360V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存5,200
1700V
75A
200A
3.3V @ 15V, 32A
350W
15mJ (off)
Standard
155nC
45ns/270ns
1360V, 32A, 2.7 Ohm, 15V
150ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGK50N90B2D1
IXYS

IGBT 900V 75A 400W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 400W
  • Switching Energy: 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/350ns
  • Test Condition: 720V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封装: TO-264-3, TO-264AA
库存5,888
900V
75A
200A
2.7V @ 15V, 50A
400W
4.7mJ (off)
Standard
135nC
20ns/350ns
720V, 50A, 5 Ohm, 15V
200ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
AOTF15B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 15A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
  • Power - Max: 36W
  • Switching Energy: 290µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 15ns/94ns
  • Test Condition: 400V, 15A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 317ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存14,190
650V
30A
45A
2.15V @ 15V, 15A
36W
290µJ (on), 200µJ (off)
Standard
32nC
15ns/94ns
400V, 15A, 20 Ohm, 15V
317ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot IRGP20B120UD-EP
Infineon Technologies

IGBT 1200V 40A 300W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A
  • Power - Max: 300W
  • Switching Energy: 850µJ (on), 425µJ (off)
  • Input Type: Standard
  • Gate Charge: 169nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 300ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存68,028
1200V
40A
120A
4.85V @ 15V, 40A
300W
850µJ (on), 425µJ (off)
Standard
169nC
-
600V, 20A, 5 Ohm, 15V
300ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRGP6690D-EPBF
Infineon Technologies

IGBT 600V 90A TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
  • Power - Max: 483W
  • Switching Energy: 2.4mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 85ns/222ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存12,876
600V
140A
225A
1.95V @ 15V, 75A
483W
2.4mJ (on), 2.2mJ (off)
Standard
140nC
85ns/222ns
400V, 75A, 10 Ohm, 15V
90ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
STGWT80V60DF
STMicroelectronics

IGBT 600V 120A 469W TO-3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 1.8mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 448nC
  • Td (on/off) @ 25°C: 60ns/220ns
  • Test Condition: 400V, 80A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存7,332
600V
120A
240A
2.3V @ 15V, 80A
469W
1.8mJ (on), 1mJ (off)
Standard
448nC
60ns/220ns
400V, 80A, 5 Ohm, 15V
60ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGD2736G3-F085V
onsemi

IGBT ECOSPARK1 IGN TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360 V
  • Current - Collector (Ic) (Max): 37.5 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 4.5V, 10A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 18 nC
  • Td (on/off) @ 25°C: 900ns/4.4µs
  • Test Condition: 300V, 6.5A, 470Ohm, 5V
  • Reverse Recovery Time (trr): 3 µs
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封装: -
Request a Quote
360 V
37.5 A
-
1.65V @ 4.5V, 10A
150 W
-
Standard
18 nC
900ns/4.4µs
300V, 6.5A, 470Ohm, 5V
3 µs
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
IHW30N140R5LXKSA1
Infineon Technologies

IGBT 1400V 80A TO247-44

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
  • Power - Max: 306 W
  • Switching Energy: -, 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: -/175ns
  • Test Condition: 25V, 30A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-44
封装: -
库存669
1400 V
80 A
90 A
1.95V @ 15V, 30A
306 W
-, 140µJ (off)
Standard
210 nC
-/175ns
25V, 30A, 2.2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-44
IRGC15B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 3A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
-
1.35V @ 15V, 3A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
LGD8205ATI
Littelfuse Inc.

IGBT 390V 20A 125W DPAK-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AFGHL25T120RHD
onsemi

1200V/25A FSII IGBT TO247 AUTOMO

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 261 W
  • Switching Energy: 1.94mJ (on), 770µJ (off)
  • Input Type: Standard
  • Gate Charge: 189 nC
  • Td (on/off) @ 25°C: 27ns/118ns
  • Test Condition: 600V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 159 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
1200 V
48 A
100 A
2.4V @ 15V, 25A
261 W
1.94mJ (on), 770µJ (off)
Standard
189 nC
27ns/118ns
600V, 25A, 5Ohm, 15V
159 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
DGG4015A
Sanken Electric USA Inc.

IGBT WITH GATE PROTECTION DIODE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 425 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 10V, 10A
  • Power - Max: 55 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
封装: -
Request a Quote
425 V
15 A
-
1.7V @ 10V, 10A
55 W
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
IKB20N65EH5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 38A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 125 W
  • Switching Energy: 560µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 400V, 20A, 32Ohm, 15V
  • Reverse Recovery Time (trr): 80 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: -
库存2,550
650 V
38 A
60 A
2.1V @ 15V, 20A
125 W
560µJ (on), 130µJ (off)
Standard
48 nC
19ns/160ns
400V, 20A, 32Ohm, 15V
80 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
AUIRGP66524D0-IR
International Rectifier

IGBT WITH ULTRAFAST SOFT RECOVER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 72 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 214 W
  • Switching Energy: 915µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 50 nC
  • Td (on/off) @ 25°C: 30ns/75ns
  • Test Condition: 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 176 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: -
Request a Quote
600 V
60 A
72 A
1.9V @ 15V, 24A
214 W
915µJ (on), 280µJ (off)
Standard
50 nC
30ns/75ns
400V, 24A, 10Ohm, 15V
176 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
SIGC25T60UNX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 400V, 30A, 1.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
30 A
90 A
3.15V @ 15V, 30A
-
-
Standard
-
16ns/122ns
400V, 30A, 1.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKW75N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
  • Power - Max: 395 W
  • Switching Energy: 450µJ (on), 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 164 nC
  • Td (on/off) @ 25°C: 22ns/145ns
  • Test Condition: 400V, 75A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
库存630
650 V
80 A
300 A
1.7V @ 15V, 75A
395 W
450µJ (on), 750µJ (off)
Standard
164 nC
22ns/145ns
400V, 75A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXYK100N65B3D1
IXYS

IGBT 650V 225A TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 225 A
  • Current - Collector Pulsed (Icm): 460 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
  • Power - Max: 830 W
  • Switching Energy: 1.27mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 168 nC
  • Td (on/off) @ 25°C: 29ns/150ns
  • Test Condition: 400V, 50A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 37 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封装: -
Request a Quote
650 V
225 A
460 A
1.85V @ 15V, 70A
830 W
1.27mJ (on), 2mJ (off)
Standard
168 nC
29ns/150ns
400V, 50A, 3Ohm, 15V
37 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
RGW00TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 254 W
  • Switching Energy: 1.18mJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 141 nC
  • Td (on/off) @ 25°C: 52ns/180ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
Request a Quote
650 V
96 A
200 A
1.9V @ 15V, 50A
254 W
1.18mJ (on), 960µJ (off)
Standard
141 nC
52ns/180ns
400V, 50A, 10Ohm, 15V
95 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N