页 636 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  636/1,401
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRFP4228PBF
Infineon Technologies

MOSFET N-CH 150V 78A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 33A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封装: TO-247-3
库存69,036
MOSFET (Metal Oxide)
150V
78A (Tc)
10V
5V @ 250µA
107nC @ 10V
4530pF @ 25V
±30V
-
310W (Tc)
15.5 mOhm @ 33A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
BTS244Z E3043
Infineon Technologies

MOSFET N-CH 55V 35A TO220-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Temperature Sensing Diode
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: P-TO220-5
  • Package / Case: TO-220-5
封装: TO-220-5
库存7,056
MOSFET (Metal Oxide)
55V
35A (Tc)
4.5V, 10V
2V @ 130µA
130nC @ 10V
2660pF @ 25V
±20V
Temperature Sensing Diode
170W (Tc)
13 mOhm @ 19A, 10V
-40°C ~ 175°C (TJ)
Through Hole
P-TO220-5
TO-220-5
IRL8113STRR
Infineon Technologies

MOSFET N-CH 30V 105A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,032
MOSFET (Metal Oxide)
30V
105A (Tc)
4.5V, 10V
2.25V @ 250µA
35nC @ 4.5V
2840pF @ 15V
±20V
-
110W (Tc)
6 mOhm @ 21A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRLR3715TRL
Infineon Technologies

MOSFET N-CH 20V 54A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存163,536
MOSFET (Metal Oxide)
20V
54A (Tc)
4.5V, 10V
3V @ 250µA
17nC @ 4.5V
1060pF @ 10V
±20V
-
3.8W (Ta), 71W (Tc)
14 mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRL3103D1
Infineon Technologies

MOSFET N-CH 30V 64A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存6,608
MOSFET (Metal Oxide)
30V
64A (Tc)
4.5V, 10V
1V @ 250µA
43nC @ 4.5V
1900pF @ 25V
±16V
-
2W (Ta), 89W (Tc)
14 mOhm @ 34A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
AO3406_104
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存3,520
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AO4405L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 6A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,616
MOSFET (Metal Oxide)
30V
6A (Ta)
4.5V, 10V
2.4V @ 250µA
11nC @ 10V
520pF @ 15V
±20V
-
3.1W (Ta)
50 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot NTD4855N-35G
ON Semiconductor

MOSFET N-CH 25V 14A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
封装: TO-251-3 Stub Leads, IPak
库存6,000
MOSFET (Metal Oxide)
25V
14A (Ta), 98A (Tc)
4.5V, 10V
2.5V @ 250µA
32.7nC @ 4.5V
2950pF @ 12V
±20V
-
1.35W (Ta), 66.7W (Tc)
4.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot STF11N65K3
STMicroelectronics

MOSFET N-CH 650V 11.0A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存7,392
MOSFET (Metal Oxide)
650V
11A (Tc)
10V
4.5V @ 100µA
42nC @ 10V
1180pF @ 50V
±30V
-
35W (Tc)
850 mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IXTH12N100
IXYS

MOSFET N-CH 1000V 12A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存6,272
MOSFET (Metal Oxide)
1000V
12A (Tc)
10V
4.5V @ 250µA
170nC @ 10V
4000pF @ 25V
±20V
-
300W (Tc)
1.05 Ohm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
NTMFS5C442NLTT3G
ON Semiconductor

MOSFET N-CH 40V 126A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存5,952
MOSFET (Metal Oxide)
40V
28A (Ta), 130A (Tc)
4.5V, 10V
2V @ 250µA
50nC @ 10V
3100pF @ 25V
±20V
-
3.7W (Ta), 83W (Tc)
2.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
DMN2501UFB4-7
Diodes Incorporated

MOSFET N-CH 20V 1A 3DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
封装: 3-XFDFN
库存7,824
MOSFET (Metal Oxide)
20V
1A (Ta)
1.8V, 4.5V
1V @ 250µA
2nC @ 10V
82pF @ 16V
±8V
-
500mW (Ta)
400 mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
hot SPW11N80C3
Infineon Technologies

MOSFET N-CH 800V 11A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 680µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存111,204
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
3.9V @ 680µA
85nC @ 10V
1600pF @ 100V
±20V
-
156W (Tc)
450 mOhm @ 7.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
DMTH6005LK3Q-13
Diodes Incorporated

MOSFET NCH 60V 90A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-4L
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD
库存21,480
MOSFET (Metal Oxide)
60V
90A (Tc)
-
3V @ 250µA
47.1nC @ 10V
2962pF @ 30V
-
-
2.1W (Ta), 100W (Tc)
5.6 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-4L
TO-252-5, DPak (4 Leads + Tab), TO-252AD
DMN62D0U-13
Diodes Incorporated

MOSFET N-CH 60V 0.38A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存7,824
MOSFET (Metal Oxide)
60V
380mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.5nC @ 4.5V
32pF @ 30V
±20V
-
380mW (Ta)
2 Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot STF31N65M5
STMicroelectronics

MOSFET N-CH 650V 22A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存6,384
MOSFET (Metal Oxide)
650V
22A (Tc)
10V
5V @ 250µA
45nC @ 10V
816pF @ 100V
±25V
-
30W (Tc)
148 mOhm @ 11A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IPP052N06L3GXKSA1
Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 58µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存12,378
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
2.2V @ 58µA
50nC @ 4.5V
8400pF @ 30V
±20V
-
115W (Tc)
5 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot IRLTS2242TRPBF
Infineon Technologies

MOSFET P-CH 20V 6.9A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
封装: SOT-23-6
库存454,224
MOSFET (Metal Oxide)
20V
6.9A (Ta)
2.5V, 4.5V
1.1V @ 10µA
12nC @ 4.5V
905pF @ 10V
±12V
-
2W (Ta)
32 mOhm @ 6.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
IRLML2803GTRPBF-ML
MOSLEADER

N 30V SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IMBG65R009M1HXTMA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MSHM30N46
Bruckewell

N-Channel MOSFET,30V,46A,DFN3x3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333
  • Package / Case: 8-VDFN Exposed Pad
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
46A (Ta)
4.5V, 10V
2.5V @ 250µA
-
-
±20V
-
-
9mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN3333
8-VDFN Exposed Pad
SIHF540STRL-GE3
Vishay Siliconix

MOSFET N-CH 100V 28A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
28A (Tc)
10V
4V @ 250µA
72 nC @ 10 V
1700 pF @ 25 V
±20V
-
3.7W (Ta), 150W (Tc)
77mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTMYS4D6N04CLTWG
onsemi

MOSFET N-CH 40V 21A/78A LFPAK4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK4 (5x6)
  • Package / Case: SOT-1023, 4-LFPAK
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
21A (Ta), 78A (Tc)
4.5V, 10V
2V @ 40µA
23 nC @ 10 V
1300 pF @ 25 V
±20V
-
3.6W (Ta), 50W (Tc)
4.5mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
IRLML6302GTRPBF-ML
MOSLEADER

P -20V SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMFS5C673NWFT1G
onsemi

MOSFET N-CH 60V 14A/50A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
14A (Ta), 50A (Tc)
10V
4V @ 35µA
9.6 nC @ 10 V
680 pF @ 30 V
±20V
-
3.6W (Ta), 46W (Tc)
10.7mOhm @ 7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
PJQ5462A_R2_00001
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060-8
  • Package / Case: 8-PowerVDFN
封装: -
库存8,841
MOSFET (Metal Oxide)
60 V
8.5A (Ta), 42A (Tc)
4.5V, 10V
2.5V @ 250µA
40 nC @ 10 V
2142 pF @ 25 V
±20V
-
2W (Ta), 60W (Tc)
12mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060-8
8-PowerVDFN
MCAC80N10Y-TP
Micro Commercial Co

MOSFET N-CH 100V 80A DFN5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 101.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6124 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 85W
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060
  • Package / Case: 8-PowerTDFN
封装: -
库存134,700
MOSFET (Metal Oxide)
100 V
80A (Tj)
4.5V, 10V
3V @ 250µA
101.6 nC @ 10 V
6124 pF @ 50 V
±20V
-
85W
4.3mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
SQP100N04-3M6_GE3
Vishay Siliconix

MOSFET N-CH 40V 100A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
3.5V @ 250µA
135 nC @ 10 V
7200 pF @ 25 V
±20V
-
120W (Tc)
3.6mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
RV4C020ZPHZGTCR1
Rohm Semiconductor

PCH -20V -2.0A SMALL SIGNAL MOSF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: DFN1616-6W
  • Package / Case: 6-PowerWFDFN
封装: -
库存7,440
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4.5V
1.3V @ 1mA
2 nC @ 4.5 V
80 pF @ 10 V
±8V
-
1.5W (Ta)
260mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount, Wettable Flank
DFN1616-6W
6-PowerWFDFN
NTTFS080N10GTAG
onsemi

100V MVSOA IN U8FL PACKAGE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: -
库存4,440
MOSFET (Metal Oxide)
100 V
4.1A (Ta), 16A (Tc)
10V
4V @ 22µA
8.6 nC @ 10 V
560.5 pF @ 50 V
±20V
-
2.5W (Ta), 39W (Tc)
72mOhm @ 4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN