图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 10A TO-220
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,848 |
|
MOSFET (Metal Oxide) | 100V | 10A (Tc) | - | 3.5V @ 1mA | - | 600pF @ 25V | - | - | - | 200 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-220AB | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 30A TO-251
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存2,480 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | ±20V | - | 83W (Tc) | 6.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | P-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 30V 90A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,016 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | ±20V | - | 3.1W (Ta), 120W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET N-CH 100V 32A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,336 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 11.2A TO-3PF
|
封装: SC-94 |
库存4,736 |
|
MOSFET (Metal Oxide) | 600V | 11.2A (Tc) | 10V | 5V @ 250µA | 90nC @ 10V | 3600pF @ 25V | ±30V | - | 120W (Tc) | 380 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 14.5A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存319,896 |
|
MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 118nC @ 10V | 4480pF @ 15V | ±25V | - | 2.5W (Ta) | 7.2 mOhm @ 14.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 75V 183A TO220
|
封装: TO-220-3 |
库存4,096 |
|
MOSFET (Metal Oxide) | 75V | 183A (Tc) | 6V, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | ±20V | - | 290W (Tc) | 3.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
TT Electronics/Optek Technology |
MOSFET N-CH 60V 200MA SMD
|
封装: 3-SMD, No Lead |
库存3,056 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 25V | ±40V | - | 300mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD | 3-SMD, No Lead |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存3,312 |
|
MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 3.5V @ 250µA | 65nC @ 10V | 4300pF @ 25V | ±20V | - | 3.8W (Ta), 128W (Tc) | 1.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Renesas Electronics America |
MOSFET N-CH 60V 100A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,392 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | - | 133nC @ 10V | 7730pF @ 25V | ±20V | - | 1.5W (Ta), 156W (Tc) | 4.6 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Texas Instruments |
30V N CH MOSFET
|
封装: 8-PowerTDFN |
库存6,096 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta), 123A (Tc) | 4.5V, 10V | 1.7V @ 250µA | 54nC @ 10V | 3640pF @ 15V | ±20V | - | 3.1W (Ta), 83W (Tc) | 3.4 mOhm @ 16A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 4.9A CHIPFET
|
封装: 8-SMD, Flat Lead |
库存8,652 |
|
MOSFET (Metal Oxide) | 30V | 4.9A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 18nC @ 10V | 900pF @ 15V | ±20V | - | 800mW (Ta) | 22 mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
||
Vishay Siliconix |
MOSFET N-CH 30V 40A 1212-8 PWR
|
封装: PowerPAK? 1212-8 |
库存7,504 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 77nC @ 10V | 3595pF @ 15V | +20V, -16V | - | 3.7W (Ta), 52W (Tc) | 2.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
IXYS |
MOSFET N-CH 300V 94A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存5,408 |
|
MOSFET (Metal Oxide) | 300V | 94A (Tc) | 10V | 5V @ 4mA | 102nC @ 10V | 5510pF @ 25V | ±20V | - | 1040W (Tc) | 36 mOhm @ 47A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存22,260 |
|
MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | ±20V | - | 3W (Ta), 20W (Tc) | 3 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 500V 6.3A TO-220FP
|
封装: TO-220-3 Full Pack |
库存7,472 |
|
MOSFET (Metal Oxide) | 500V | 6.3A (Tc) | 13V | 3.5V @ 260µA | 24.8nC @ 10V | 584pF @ 100V | ±20V | - | 29.2W (Tc) | 380 mOhm @ 3.2A, 13V | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 13A
|
封装: 8-PowerVDFN |
库存5,552 |
|
MOSFET (Metal Oxide) | 100V | 13A (Ta), 72A (Tc) | 6V, 10V | 4V @ 250µA | 83nC @ 10V | 5875pF @ 75V | ±20V | - | 3.2W (Ta), 113W (Tc) | 9 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool?88 | 8-PowerVDFN |
||
Texas Instruments |
MOSFET N-CH 80V 200A DDPAK-3
|
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
库存2,144 |
|
MOSFET (Metal Oxide) | 80V | 200A (Ta) | 6V, 10V | 3.2V @ 250µA | 76nC @ 10V | 7920pF @ 40V | ±20V | - | 300W (Tc) | 3.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
||
Central Semiconductor Corp |
MOSFET P-CH 20V 650MA SOT523
|
封装: SOT-523 |
库存7,552 |
|
MOSFET (Metal Oxide) | 20V | 650mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 1.2nC @ 4.5V | 100pF @ 16V | 8V | - | 300mW (Ta) | 360 mOhm @ 350mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6.3A SOT-223
|
封装: TO-261-4, TO-261AA |
库存42,648 |
|
MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 500pF @ 15V | ±8V | - | 3W (Ta) | 45 mOhm @ 6.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB
|
封装: TO-220-3 |
库存48,912 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | ±20V | - | 190W (Tc) | 18 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8SOP
|
封装: 8-PowerVDFN |
库存36,648 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | ±20V | - | 1.6W (Ta), 36W (Tc) | 4 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Diotec Semiconductor |
IC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 145A (Tc) | 10V | 4V @ 250µA | 115 nC @ 10 V | 7000 pF @ 20 V | ±20V | - | 75W (Tc) | 1.5mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-QFN (5x6) | 8-PowerTDFN |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 11A TO247-3
|
封装: - |
库存16,794 |
|
SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 2.69V @ 2mA | 12 nC @ 15 V | 334 pF @ 800 V | ±15V | - | 74W (Tc) | 420mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
onsemi |
MOSFET N-CH 80V 17A/89A 5DFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 17A (Ta), 89A (Tc) | 6V, 10V | 4V @ 120µA | 32 nC @ 10 V | 2085 pF @ 40 V | ±20V | - | 3.8W (Ta), 104W (Tc) | 5.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Infineon Technologies |
MOSFET N-CH 60V 18A/40A TSDSON
|
封装: - |
库存8,988 |
|
MOSFET (Metal Oxide) | 60 V | 18A (Ta), 40A (Tc) | 6V, 10V | 3.3V @ 36µA | 34 nC @ 10 V | 2500 pF @ 30 V | ±20V | - | 2.1W (Ta), 69W (Tc) | 3.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Microchip Technology |
MOSFET, P-CHANNEL ENHANCEMENT-MO
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 350 V | 85mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 110 pF @ 25 V | ±20V | - | 360mW (Ta) | 30Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN (2x2) | 6-VDFN Exposed Pad |
||
Infineon Technologies |
IC DISCRETE
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 80V 80A POWER56
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 4V @ 250µA | 75 nC @ 10 V | 4350 pF @ 40 V | ±20V | - | 214W (Tc) | 4.5mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V,POWERDI10
|
封装: - |
库存3,396 |
|
MOSFET (Metal Oxide) | 100 V | 215A (Tc) | 10V | 4V @ 250µA | 124.4 nC @ 10 V | 8450 pF @ 50 V | ±20V | - | 5.8W (Ta), 230.8W (Tc) | 2.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI1012-8 | 8-PowerSFN |