图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 25V DIRECTFET MX
|
封装: DirectFET? Isometric MX |
库存2,224 |
|
MOSFET (Metal Oxide) | 25V | 32A (Ta), 200A (Tc) | 4.5V, 10V | 2.35V @ 100µA | 47nC @ 4.5V | 4420pF @ 13V | ±20V | Schottky Diode (Body) | 2.8W (Ta), 100W (Tc) | 1.7 mOhm @ 32A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 100V 27A TO220-3
|
封装: TO-220-3 |
库存12,252 |
|
MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | ±20V | - | 58W (Tc) | 35 mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存4,432 |
|
MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 1.4V @ 250µA | 1.4nC @ 10V | 41pF @ 25V | ±20V | - | 360mW (Ta) | 3.5 Ohm @ 230mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 150V 83A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,296 |
|
MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | ±30V | - | 330W (Tc) | 15 mOhm @ 33A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 80A TO-220
|
封装: TO-220-3 |
库存3,568 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 130µA | 105nC @ 10V | 3900pF @ 25V | ±20V | - | 188W (Tc) | 4.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 12V 15A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,272 |
|
MOSFET (Metal Oxide) | 12V | 15A (Ta) | 2.8V, 4.5V | 1.9V @ 250µA | 40nC @ 4.5V | 2550pF @ 6V | ±12V | - | 2.5W (Ta) | 8 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET
|
封装: DirectFET? Isometric MT |
库存150,372 |
|
MOSFET (Metal Oxide) | 30V | 27A (Ta), 92A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 72nC @ 4.5V | 6590pF @ 15V | +20V, -12V | - | 3.6W (Ta), 42W (Tc) | 3.4 mOhm @ 25A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MT | DirectFET? Isometric MT |
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IXYS |
MOSFET N-CH 55V 280A TO-247
|
封装: TO-247-3 |
库存6,960 |
|
MOSFET (Metal Oxide) | 55V | 280A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9700pF @ 25V | ±20V | - | 550W (Tc) | 3.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 1200V 30A PLUS264
|
封装: TO-264-3, TO-264AA |
库存4,992 |
|
MOSFET (Metal Oxide) | 1200V | 30A (Tc) | 10V | 6.5V @ 1mA | 310nC @ 10V | 22500pF @ 25V | ±20V | - | 1250W (Tc) | 350 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 300V 1.2A 8DFN
|
封装: 8-PowerSMD, Flat Leads |
库存7,376 |
|
MOSFET (Metal Oxide) | 300V | 1.2A (Ta), 4A (Tc) | 10V | 4.5V @ 250µA | 8.2nC @ 10V | 380pF @ 25V | ±30V | - | 3.1W (Ta), 33W (Tc) | 830 mOhm @ 1.2A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
Diodes Incorporated |
MOSFET N-CH 40V 8A U-DFN2020-6
|
封装: 6-UDFN Exposed Pad |
库存6,784 |
|
MOSFET (Metal Oxide) | 40V | 8A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 19.1nC @ 20V | 1060pF @ 20V | ±20V | - | 660mW (Ta) | 20 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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Rohm Semiconductor |
MOSFET N-CH 600V 9A LPT
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,088 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 4V @ 1mA | 23nC @ 10V | 430pF @ 25V | ±20V | - | 40W (Tc) | 535 mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 11.3A 1212-8
|
封装: PowerPAK? 1212-8 |
库存168,492 |
|
MOSFET (Metal Oxide) | 30V | 11.3A (Tc) | 4.5V, 10V | 1.5V @ 250µA | 27nC @ 4.5V | 2610pF @ 15V | ±12V | - | 1.5W (Ta) | 7.5 mOhm @ 17.8A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Infineon Technologies |
MOSFET N-CH 75V 140A TO-220AB
|
封装: TO-220-3 |
库存90,840 |
|
MOSFET (Metal Oxide) | 75V | 140A (Tc) | 10V | 4V @ 250µA | 220nC @ 10V | 5310pF @ 25V | ±20V | - | 330W (Tc) | 7 mOhm @ 82A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 37A TO-220AB
|
封装: TO-220-3 |
库存109,560 |
|
MOSFET (Metal Oxide) | 150V | 5A (Ta), 37A (Tc) | 6V, 10V | 4V @ 250µA | 51nC @ 10V | 2800pF @ 25V | ±20V | - | 150W (Tc) | 36 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Panasonic Electronic Components |
MOSFET P-CH 12V 4A WSMINI6
|
封装: 6-SMD, Flat Leads |
库存4,400 |
|
MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 1V @ 1mA | - | 1400pF @ 10V | ±8V | - | 700mW (Ta) | 34 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
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Nexperia USA Inc. |
MOSFET N-CH 100V 9.4A LFPAK
|
封装: SC-100, SOT-669 |
库存22,806 |
|
MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 4V @ 1mA | 9.4nC @ 10V | 497pF @ 25V | ±20V | - | 37.3W (Tc) | 153 mOhm @ 2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Microchip Technology |
MOSFET P-CH 90V 0.25A TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存14,628 |
|
MOSFET (Metal Oxide) | 90V | 250mA (Tj) | 5V, 10V | 3.5V @ 1mA | - | 60pF @ 25V | ±20V | - | 1W (Tc) | 8 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 350MA SC-89
|
封装: SC-89, SOT-490 |
库存872,136 |
|
MOSFET (Metal Oxide) | 20V | 350mA (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | 100pF @ 10V | ±8V | - | 625mW (Ta) | 1.2 Ohm @ 350mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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STMicroelectronics |
MOSFET N-CH 200V 1A SOT-223
|
封装: TO-261-4, TO-261AA |
库存61,212 |
|
MOSFET (Metal Oxide) | 200V | 1A (Tc) | 10V | 4V @ 250µA | 5.7nC @ 10V | 90pF @ 25V | ±20V | - | 2W (Ta) | 1.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Micro Commercial Co |
MOSFET N-CH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 10V | 2.9V @ 250µA | 11 nC @ 10 V | 612 pF @ 50 V | ±20V | - | 28W | 100mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
150 V, 7 MOHM GALLIUM NITRIDE (G
|
封装: - |
库存4,851 |
|
GaNFET (Gallium Nitride) | 150 V | 28A | 5V | 2.1V @ 5mA | 7.6 nC @ 5 V | 865 pF @ 85 V | +6V, -4V | - | 28W | 7mOhm @ 10A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | 3-FCLGA (3.2x2.2) | 3-VLGA |
||
Infineon Technologies |
SIC DISCRETE
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 2.2V @ 120µA | 92 nC @ 10 V | 5430 pF @ 25 V | +5V, -16V | - | 75W (Tc) | 7.8mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
FET 150V 6.5 MOHMS PQFN88
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 15A (Ta), 99A (Tc) | 6V, 10V | 4V @ 250µA | 108 nC @ 10 V | 8205 pF @ 75 V | ±20V | - | 3.2W (Ta), 156W (Tc) | 6.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool™88 | 8-PowerVDFN |
||
Renesas Electronics Corporation |
MOSFET N-CH 5.5V 12A 6WLCSP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 5.5 V | 12A (Ta) | 3.5V, 4.5V | 800mV @ 250µA | 6 nC @ 3.5 V | 940 pF @ 5.5 V | ±5.5V | - | 2.5W (Ta) | 2.4mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.47x1.47) | 6-SMD, No Lead |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 5.4A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 11.5 nC @ 4.5 V | 143 pF @ 10 V | ±8V | - | 890mW (Ta) | 31mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
T6 60V SL LFPAK8 5X6
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 26.9A (Ta), 139.3A (Tc) | 10V | 4V @ 135µA | 34 nC @ 10 V | 2675 pF @ 25 V | ±20V | - | 4.2W (Ta), 112.5W (Tc) | 2.9mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
||
Infineon Technologies |
MOSFET N-CH 40V 30A/100A TDSON
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 30A (Ta), 100A (Tc) | 10V | 4V @ 85µA | 108 nC @ 10 V | 8800 pF @ 20 V | ±20V | - | 2.5W (Ta), 139W (Tc) | 1.7mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
||
Rohm Semiconductor |
NCH 100V 70A, TO-263AB, POWER M
|
封装: - |
库存2,400 |
|
MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 6V, 10V | 4V @ 1mA | 73 nC @ 10 V | 4650 pF @ 50 V | ±20V | - | 135W (Tc) | 5.1mOhm @ 70A, 10V | 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |