图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 12A TO220F
|
封装: TO-220-3 Full Pack |
库存6,080 |
|
MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 1954pF @ 100V | ±30V | - | 50W (Tc) | 520 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
EPC |
TRANS GAN 100V 25A BUMPED DIE
|
封装: Die |
库存2,288 |
|
GaNFET (Gallium Nitride) | 100V | 25A (Ta) | 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | +6V, -5V | - | - | 7 mOhm @ 25A, 5V | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
||
Renesas Electronics America |
MOSFET N-CH 55V 100A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,688 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 3.25 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 280V 80A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存18,204 |
|
MOSFET (Metal Oxide) | 280V | 80A (Tc) | 10V | 5V @ 1mA | 115nC @ 10V | 5000pF @ 25V | ±30V | - | 500W (Tc) | 49 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存452,388 |
|
MOSFET (Metal Oxide) | 100V | - | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 300V 35A TO-247AD
|
封装: TO-247-3 |
库存11,148 |
|
MOSFET (Metal Oxide) | 300V | 35A (Tc) | 10V | 4V @ 4mA | 200nC @ 10V | 4800pF @ 25V | ±20V | - | 300W (Tc) | 100 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Infineon Technologies |
MOSFET P-CH TO263-3
|
封装: - |
库存3,568 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
TRANSISTOR N-CH
|
封装: - |
库存5,536 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 55V 64A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存62,100 |
|
MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | ±20V | - | 3.8W (Ta), 130W (Tc) | 14 mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 900V 32A PLUS247
|
封装: TO-247-3 |
库存3,440 |
|
MOSFET (Metal Oxide) | 900V | 32A (Tc) | 10V | 6.5V @ 1mA | 215nC @ 10V | 10600pF @ 25V | ±30V | - | 960W (Tc) | 300 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 60V 200A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存4,848 |
|
MOSFET (Metal Oxide) | 60V | 200A (Tc) | 10V | 5V @ 250µA | 200nC @ 10V | 5400pF @ 25V | ±20V | - | 714W (Tc) | 5 mOhm @ 400A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
STMicroelectronics |
MOSFET N-CH 950V 9A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,960 |
|
MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 5V @ 100µA | 13nC @ 10V | 450pF @ 100V | ±30V | - | 90W (Tc) | 1.25 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V 24A
|
封装: TO-247-3 |
库存6,432 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 5V @ 250µA | 43nC @ 10V | 1870pF @ 100V | ±25V | - | 190W (Tc) | 130 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
IXYS |
MOSFET N-CH 1000V 1.6A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,272 |
|
MOSFET (Metal Oxide) | 1000V | 1.6A (Tc) | - | - | 27nC @ 5V | 645pF @ 25V | ±20V | Depletion Mode | 100W (Tc) | 10 Ohm @ 800mA, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 24A PT8
|
封装: 8-PowerTDFN |
库存326,928 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 1mA | 47nC @ 10V | 3000pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 2.8 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 950V 7.2A TO-247
|
封装: TO-247-3 |
库存14,820 |
|
MOSFET (Metal Oxide) | 950V | 7.2A (Tc) | 10V | 5V @ 100µA | 34nC @ 10V | 1031pF @ 100V | ±30V | - | 150W (Tc) | 1.35 Ohm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 210A TO-220AB
|
封装: TO-220-3 |
库存392,448 |
|
MOSFET (Metal Oxide) | 40V | 210A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 5890pF @ 25V | ±20V | - | 330W (Tc) | 3.6 mOhm @ 130A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4A TO-220
|
封装: TO-220-3 |
库存30,900 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.5V @ 250µA | 18nC @ 10V | 615pF @ 25V | ±30V | - | 104W (Tc) | 2.2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 60V 45A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存501,444 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 5V | 2V @ 250µA | 32nC @ 5V | 1700pF @ 25V | ±15V | - | 2.4W (Ta), 125W (Tj) | 28 mOhm @ 22.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Transphorm |
650 V 35 A GAN FET HIGH VOLTAGE
|
封装: - |
库存1,296 |
|
GaNFET (Gallium Nitride) | 650 V | 35A (Tc) | 10V | 4.8V @ 700µA | 24 nC @ 10 V | 1000 pF @ 400 V | ±20V | - | 132W (Tc) | 60mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Diodes Incorporated |
MOSFET BVDSS: 25V-30V SOT323
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 380mA (Ta) | 4.5V, 10V | 2.6V @ 250µA | 0.36 nC @ 4.5 V | 19 pF @ 15 V | ±20V | - | 290mW (Ta) | 900mOhm @ 420mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Panjit International Inc. |
900V N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 900 V | 6A (Ta) | 10V | 4V @ 250µA | 23.6 nC @ 10 V | 915 pF @ 25 V | ±30V | - | 56W (Tc) | 2.3Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack |
||
Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 42A (Ta), 445A (Tc) | 6V, 10V | 3.3V @ 163µA | 150 nC @ 10 V | 12000 pF @ 30 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
Request a Quote |
|
- | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
||
Harris Corporation |
N-CHANNEL, MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 5V | 2V @ 1mA | - | 2000 pF @ 25 V | ±10V | - | 75W (Tc) | 85mOhm @ 12.5A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Renesas Electronics Corporation |
HIGH SPEED SWITCHING P CHANNEL ,
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
SWITCHING DEVICE
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET P-CH 30V 11A PWRDI3333
|
封装: - |
库存51,021 |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta), 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 51 nC @ 10 V | 2147 pF @ 15 V | ±25V | - | 1W (Ta) | 12mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
||
onsemi |
NCH 1.8V DRIVE SERIES
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |