图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 80V 70A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,152 |
|
MOSFET (Metal Oxide) | 80V | 70A (Tc) | 10V | 5.5V @ 250µA | 94nC @ 10V | 3510pF @ 25V | ±20V | - | 3.8W (Ta), 140W (Tc) | 14 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 20V 49A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存21,420 |
|
MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | ±20V | - | 40W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 800V 2A TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,528 |
|
MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.9V @ 120µA | 16nC @ 10V | 290pF @ 100V | ±20V | - | 42W (Tc) | 2.7 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 100V TO-205AF
|
封装: TO-205AF Metal Can |
库存7,728 |
|
MOSFET (Metal Oxide) | 100V | 3.5A (Tc) | 10V | 4V @ 250µA | 8.1nC @ 10V | - | ±20V | - | 800mW (Ta), 15W (Tc) | 600 mOhm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
||
NXP |
MOSFET N-CH 60V 340MA SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存6,800 |
|
MOSFET (Metal Oxide) | 60V | 340mA (Ta) | 4.5V, 10V | 2V @ 1mA | - | 40pF @ 10V | ±15V | - | 830mW (Ta) | 3.9 Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 9.5A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存176,976 |
|
MOSFET (Metal Oxide) | 30V | 9.5A (Ta), 30A (Tc) | 4.5V, 10V | 3V @ 250µA | 9.4nC @ 5V | 660pF @ 15V | ±20V | - | 2.8W (Ta), 36W (Tc) | 20 mOhm @ 9.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,208 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | ±10V | - | 3.1W (Ta), 74W (Tc) | 400 mOhm @ 5.4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 600V 30A TO-268 D3
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,000 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 5V @ 250µA | 82nC @ 10V | 5050pF @ 25V | ±30V | - | 540W (Tc) | 240 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 500V 4A TO-220
|
封装: TO-220-3 |
库存3,472 |
|
MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 5.5V @ 250µA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 41W (Tc) | 800 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 200V 15A TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,008 |
|
MOSFET (Metal Oxide) | 200V | 15A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 20A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存68,808 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 54nC @ 10V | 1500pF @ 25V | ±30V | - | 192W (Tc) | 290 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 12V 4A SC-70-6
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存454,104 |
|
MOSFET (Metal Oxide) | 12V | 4A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 36nC @ 8V | - | ±10V | - | 1.6W (Ta), 2.8W (Tc) | 34 mOhm @ 5.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 32A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存103,476 |
|
MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2220pF @ 25V | ±30V | - | 204W (Tc) | 82 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 18A PWRDI3333-8
|
封装: 8-PowerWDFN |
库存3,232 |
|
MOSFET (Metal Oxide) | 20V | 18A (Ta), 40A (Tc) | 2.5V, 10V | 1.3V @ 250µA | 85nC @ 10V | 4621pF @ 10V | ±12V | - | 2.3W (Ta) | 5.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 80A TO-220AB
|
封装: TO-220-3 |
库存111,732 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 222nC @ 10V | 12240pF @ 15V | ±20V | - | 254W (Tc) | 2.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 48A TO-220AB
|
封装: TO-220-3 |
库存549,096 |
|
MOSFET (Metal Oxide) | 60V | 48A (Tc) | 5V, 10V | 2V @ 250µA | 60nC @ 5V | 2000pF @ 25V | ±16V | - | 100W (Tc) | 20 mOhm @ 24A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 250V 8TDSON
|
封装: 8-PowerTDFN |
库存36,738 |
|
MOSFET (Metal Oxide) | 250V | 24A (Tc) | 10V | 4V @ 90µA | 30nC @ 10V | 2410pF @ 125V | ±20V | - | 150W (Tc) | 67 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8TSON
|
封装: 8-PowerVDFN |
库存6,224 |
|
MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | ±20V | - | 700mW (Ta), 30W (Tc) | 11.4 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Central Semiconductor Corp |
SUPER JUNCTION MOSFETS
|
封装: - |
库存1,500 |
|
MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 4V @ 250µA | 17 nC @ 10 V | 554 pF @ 400 V | 30V | - | 32W (Tc) | 600mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Diotec Semiconductor |
MOSFET P-CH 60V 130MA SOT23-3
|
封装: - |
库存33,663 |
|
MOSFET (Metal Oxide) | 60 V | 130mA (Ta) | 10V | 2V @ 1mA | - | 45 pF @ 25 V | ±20V | - | 250mW (Ta) | 10Ohm @ 130mA, 10V | 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N CH 40V 100A PQFN5X6
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | - | 3.9V @ 150µA | 194 nC @ 10 V | 6419 pF @ 25 V | - | - | - | 1.4mOhm @ 100A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-VQFN Exposed Pad |
||
Micro Commercial Co |
MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 20A | 4.5V, 10V | 2.5V @ 250µA | 19 nC @ 10 V | 821 pF @ 30 V | ±20V | - | 125W (Tj) | 37mOhm @ 10A, 10V | -55°C ~ 150°C | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
OPTIMOS LOWVOLTAGE POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 16A (Ta), 99A (Tc) | 6V, 10V | 3.8V @ 49µA | 44 nC @ 10 V | 2900 pF @ 40 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WHSON-8-1 | 8-PowerWDFN |
||
onsemi |
P-CHANNEL MOSFET FOR ULTRA-HIGH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4V, 10V | 2.6V @ 1mA | 5.5 nC @ 10 V | 200 pF @ 10 V | ±20V | - | 1W (Ta) | 145mOhm @ 1A, 10V | 150°C | Surface Mount | 3-MCPH | 3-SMD, Flat Lead |
||
Rohm Semiconductor |
1200V, 40A, 7-PIN SMD, TRENCH-ST
|
封装: - |
库存2,388 |
|
SiCFET (Silicon Carbide) | 1200 V | 40A (Tj) | 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | 2335 pF @ 800 V | +21V, -4V | - | 150W | 47mOhm @ 21A, 18V | 175°C (TJ) | Surface Mount | TO-263-7L | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
IXYS |
MOSFET N-CH 200V 90A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 4.5V @ 1.5mA | 78 nC @ 10 V | 5420 pF @ 25 V | ±20V | - | 390W (Tc) | 12.8mOhm @ 45A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK
|
封装: - |
库存20,682 |
|
MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.8V @ 273µA | 206 nC @ 10 V | 14400 pF @ 37.5 V | ±20V | - | 300W (Tc) | 2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 136A (Tc) | 10V | 4.5V @ 3.08mA | 236 nC @ 10 V | 12338 pF @ 400 V | ±20V | - | 694W (Tc) | 17mOhm @ 61.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22 | 22-PowerBSOP Module |
||
Infineon Technologies |
SICFET N-CH 1.2KV 47A TO263
|
封装: - |
库存1,704 |
|
SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | - | 5.7V @ 7.5mA | 46 nC @ 18 V | 1527 pF @ 800 V | +18V, -15V | - | 227W (Tc) | 63mOhm @ 16A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |