图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223
|
封装: TO-261-4, TO-261AA |
库存4,048 |
|
MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | ±20V | - | 1.8W (Ta) | 120 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 55V 25A TO-220
|
封装: TO-220-3 |
库存103,464 |
|
MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 2.2V @ 20µA | 47nC @ 10V | 2260pF @ 25V | ±16V | - | 50W (Tc) | 21.6 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 105A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,536 |
|
MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 35nC @ 4.5V | 2840pF @ 15V | ±20V | - | 110W (Tc) | 6 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO-262F
|
封装: TO-262-3 Full Pack, I2Pak |
库存6,480 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 42nC @ 10V | 2000pF @ 100V | ±30V | - | 28W (Tc) | 400 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Full Pack, I2Pak |
||
Vishay Siliconix |
MOSFET P-CH 20V 8.4A PPAK 1212-8
|
封装: PowerPAK? 1212-8 |
库存3,264 |
|
MOSFET (Metal Oxide) | 20V | 8.4A (Ta) | 1.8V, 4.5V | 1V @ 400µA | 51nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 15 mOhm @ 13.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Vishay Siliconix |
MOSFET P-CH 20V 5.8A 2X2 6-MFP
|
封装: 6-MICRO FOOT?CSP |
库存6,944 |
|
MOSFET (Metal Oxide) | 20V | 5.8A (Ta) | 1.8V, 4.5V | 900mV @ 350µA | 50nC @ 4.5V | - | ±8V | - | 1.47W (Ta) | 27 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-Micro Foot? | 6-MICRO FOOT?CSP |
||
STMicroelectronics |
MOSFET N-CH 800V 45A ISOTOP
|
封装: ISOTOP |
库存5,520 |
|
MOSFET (Metal Oxide) | 800V | 45A | 10V | 4.5V @ 150µA | 781nC @ 10V | 26000pF @ 25V | ±30V | - | 600W (Tc) | 130 mOhm @ 22.5A, 10V | -65°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
||
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,528 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 100 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 46A TO-247
|
封装: TO-247-3 |
库存5,232 |
|
MOSFET (Metal Oxide) | 600V | 46A (Tc) | 10V | 5V @ 2.9mA | 322nC @ 10V | 7700pF @ 25V | ±20V | - | 417W (Tc) | 83 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7-3
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存6,160 |
|
MOSFET (Metal Oxide) | 30V | 180A (Tc) | 4.5V, 10V | 2.2V @ 200µA | 300nC @ 10V | 23000pF @ 25V | ±16V | - | 250W (Tc) | 0.95 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 25A TO220
|
封装: TO-220-3 |
库存6,912 |
|
MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 4V @ 250µA | 26.4nC @ 10V | 1278pF @ 100V | ±30V | - | 357W (Tc) | 190 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 61.8A TO-3P(N)
|
封装: TO-3P-3, SC-65-3 |
库存4,848 |
|
MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 3.7V @ 3.1mA | 180nC @ 10V | 6500pF @ 300V | ±30V | Super Junction | 400W (Tc) | 38 mOhm @ 30.9A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Microsemi Corporation |
MOSFET N-CH 1000V 145A SP6
|
封装: SP6 |
库存2,100 |
|
MOSFET (Metal Oxide) | 1000V | 145A | 10V | 5V @ 20mA | 1068nC @ 10V | 28500pF @ 25V | ±30V | - | 3250W (Tc) | 78 mOhm @ 72.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
Vishay Siliconix |
MOSFET N-CH 40V 40A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存174,396 |
|
MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 48nC @ 10V | 1785pF @ 20V | ±20V | - | 5W (Ta), 34.7W (Tc) | 6.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 15A LPT
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,544 |
|
MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 4V @ 1mA | 40nC @ 10V | 910pF @ 25V | ±20V | - | 40W (Tc) | 290 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,168 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 275nC @ 20V | 4000pF @ 25V | ±20V | - | 325W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas Electronics America |
MOSFET P-CH 30V 75A 8HSON
|
封装: 8-SMD, Flat Lead Exposed Pad |
库存5,232 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 2.5V @ 250µA | 141nC @ 10V | 4800pF @ 25V | ±20V | - | 1W (Ta), 138W (Tc) | 6.2 mOhm @ 37.5A, 10V | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
||
Panasonic Electronic Components |
MOSFET P CH 20V 4.4A PMCP
|
封装: 3-SMD, Non-Standard |
库存3,488 |
|
MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 2V, 4.5V | 1.05V @ 1mA | - | 3000pF @ 10V | ±8V | - | - | 12.5 mOhm @ 3.7A, 4.5V | 150°C (TJ) | Surface Mount | 3-PMCP | 3-SMD, Non-Standard |
||
Diodes Incorporated |
MOSFET P-CH 60V 7A SOT223
|
封装: TO-261-4, TO-261AA |
库存5,504 |
|
MOSFET (Metal Oxide) | 60V | 7A (Ta), 18.2A (Tc) | 4.5V, 10V | 3V @ 250µA | 53.1nC @ 10V | 2569pF @ 30V | ±20V | - | 2W (Ta) | 28 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 500V 20A TO-220AB
|
封装: TO-220-3 |
库存33,324 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 2870pF @ 25V | ±30V | - | 280W (Tc) | 250 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Micro Commercial Co |
MOSFET N-CH 60V 340MA SOT-23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存295,620 |
|
MOSFET (Metal Oxide) | 60V | 340mA (Ta) | 4.5V, 10V | 1V @ 1mA | - | 40pF @ 10V | ±20V | - | 350mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 29 nC @ 10 V | 2700 pF @ 15 V | ±20V | - | 2.3W (Ta), 42W (Tc) | 5.3mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
||
Central Semiconductor Corp |
MOSFET N-CH 30V 3.6A DIE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 13 nC @ 4.5 V | 590 pF @ 10 V | 12V | - | - | 78mOhm @ 1.8A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Vishay Siliconix |
MOSFET N-CH 80V 150A TO263
|
封装: - |
库存8,601 |
|
MOSFET (Metal Oxide) | 80 V | 150A (Tc) | 7.5V, 10V | 4V @ 250µA | 227 nC @ 10 V | 10680 pF @ 40 V | ±20V | - | 375W (Tc) | 2.1mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 3V @ 1mA | 68 nC @ 10 V | 4389 pF @ 15 V | ±20V | - | 3.2W (Ta), 100W (Tc) | 2mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
MOSFET N-CH 20V 18A 8DFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 18A (Ta) | - | 2.5V @ 1mA | 16 nC @ 5 V | 1800 pF @ 10 V | - | - | - | 5.8mOhm @ 18A, 10V | - | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
||
onsemi |
MOSFET N-CH 100V 201A TO263
|
封装: - |
库存29,688 |
|
MOSFET (Metal Oxide) | 100 V | 201A (Ta) | 10V | 4V @ 500µA | 175 nC @ 10 V | 11900 pF @ 50 V | ±20V | - | 340W (Tc) | 4.2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET P-CH 60V 8A
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
MOSFET P-CH 60V 1.5A TSMT3
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 60 V | 1.5A (Ta) | 4V, 10V | 3V @ 1mA | 10 nC @ 10 V | 500 pF @ 10 V | ±20V | - | 700mW (Ta) | 280mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
Diotec Semiconductor |
IC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 4V @ 250µA | 27 nC @ 10 V | 1700 pF @ 30 V | ±20V | - | 70W (Tc) | 7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (5x6) | 8-PowerTDFN |