图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N CH 250V 9.3A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,968 |
|
MOSFET (Metal Oxide) | 250V | 9.3A (Tc) | 10V | 5V @ 50µA | 20nC @ 10V | 705pF @ 25V | ±20V | - | 100W (Tc) | 345 mOhm @ 5.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 20V 54A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,120 |
|
MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | - | 3.8W (Ta), 71W (Tc) | 14 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 87A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,584 |
|
MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | ±20V | - | 79W (Tc) | 6.3 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 20V 7A MCPH6
|
封装: 6-SMD, Flat Leads |
库存2,176 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
||
ON Semiconductor |
MOSFET P-CH 30V 6A CPH6
|
封装: - |
库存3,888 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 100A TO220AB
|
封装: TO-220-3 |
库存7,648 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V, 10V | 2.1V @ 1mA | 65nC @ 5V | 9710pF @ 25V | ±10V | - | 234W (Tc) | 4.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 40V 5.4A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,512 |
|
MOSFET (Metal Oxide) | 40V | 5.4A (Ta), 8A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20nC @ 10V | 640pF @ 20V | ±20V | - | 2W (Ta), 10.8W (Tc) | 37 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Renesas Electronics America |
MOSFET N-CH 200V 2A 8SOP
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存28,752 |
|
MOSFET (Metal Oxide) | 200V | 2A (Ta) | 10V | - | 13nC @ 10V | 450pF @ 25V | ±30V | - | 2.5W (Ta) | 440 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET BVDSS: 651V 800V TO251
|
封装: TO-251-3, IPak, Short Leads |
库存4,912 |
|
MOSFET (Metal Oxide) | 700V | 7A (Tc) | 10V | 4V @ 250µA | 18.4nC @ 10V | 603pF @ 50V | ±30V | - | 68W (Tc) | 900 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3, IPak, Short Leads |
||
Diodes Incorporated |
MOSFET N-CH 50V 0.5A SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存7,552 |
|
MOSFET (Metal Oxide) | 50V | 500mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 0.6nC @ 4.5V | 46pF @ 25V | ±20V | - | 370mW (Ta) | 1.6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN
|
封装: TO-3P-3, SC-65-3 |
库存6,252 |
|
MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | ±30V | - | 200W (Tc) | 2 Ohm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 17A LFPAK
|
封装: SOT-1210, 8-LFPAK33 (5-Lead) |
库存3,504 |
|
MOSFET (Metal Oxide) | 60V | 17A (Tc) | 5V | 2.1V @ 1mA | 6nC @ 5V | 683pF @ 25V | ±10V | - | 36W (Tc) | 46 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 8A TO-3PF
|
封装: SC-94 |
库存401,256 |
|
MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 5V @ 250µA | 88nC @ 10V | 3500pF @ 25V | ±30V | - | 120W (Tc) | 750 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Diodes Incorporated |
MOSFET N-CH 60V 13.5A POWERDI506
|
封装: 8-PowerTDFN |
库存3,344 |
|
MOSFET (Metal Oxide) | 60V | 13.5A (Ta), 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 41.3nC @ 10V | 2090pF @ 30V | ±20V | - | 2.6W (Ta), 136W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 8A 6DFN
|
封装: 6-UDFN Exposed Pad |
库存180,180 |
|
MOSFET (Metal Oxide) | 20V | 8A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 18nC @ 4.5V | 1025pF @ 10V | ±8V | - | 2.8W (Ta) | 32 mOhm @ 8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
||
Vishay Siliconix |
MOSFET P-CH 150V 0.53A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存432,600 |
|
MOSFET (Metal Oxide) | 150V | 530mA (Ta) | 6V, 10V | 4.5V @ 250µA | 12nC @ 10V | 510pF @ 25V | ±20V | - | 750mW (Ta) | 1.2 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 80 V (D-S)
|
封装: - |
库存8,814 |
|
MOSFET (Metal Oxide) | 80 V | 118A (Tc) | 10V | 3.5V @ 250µA | 69 nC @ 10 V | 3478 pF @ 25 V | ±20V | - | 234W (Tc) | 7.5mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
onsemi |
MOSFET N-CH 40V 28A/142A 8WDFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 28A (Ta), 142A (Tc) | 4.5V, 10V | 2V @ 90µA | 49 nC @ 10 V | 2940 pF @ 25 V | ±20V | - | 3.2W (Ta), 85W (Tc) | 2.2mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Renesas Electronics Corporation |
MOSFET N-CH 150V 10A 8WPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 10A (Ta) | 10V | 4.5V @ 1mA | 9.7 nC @ 10 V | 430 pF @ 25 V | ±30V | - | 20W (Tc) | 190mOhm @ 5A, 10V | 150°C | Surface Mount | 8-WPAK (3) | 8-PowerWDFN |
||
Infineon Technologies |
MOSFET N-CH 950V 14A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 950 V | 14A (Tc) | 10V | 3.5V @ 360µA | 35 nC @ 10 V | 1053 pF @ 400 V | ±20V | - | 30W (Tc) | 450mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET N-CH 100V PWRDI5060
|
封装: - |
库存6,078 |
|
MOSFET (Metal Oxide) | 100 V | 14A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 2085 pF @ 50 V | ±20V | - | 1.3W (Ta) | 8.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 40V 14A/45A DPAK
|
封装: - |
库存18,720 |
|
MOSFET (Metal Oxide) | 40 V | 14A (Ta), 45A (Tc) | 4.5V, 10V | 2.2V @ 30µA | 20 nC @ 10 V | 1100 pF @ 25 V | ±20V | - | 3W (Ta), 30W (Tc) | 7.7mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas |
2SK3447TZ-E - SILICON N CHANNEL
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 1A (Ta) | 4V, 10V | 2.5V @ 1mA | 4.5 nC @ 10 V | 85 pF @ 10 V | ±20V | - | 900mW (Ta) | 1.95Ohm @ 500mA, 10V | 150°C | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
MOSLEADER |
Single-N 30V 2.6A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 100V 220MA TO92-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 220mA (Ta) | - | 2V @ 1mA | 2 nC @ 10 V | 60 pF @ 25 V | - | - | - | 6Ohm @ 220mA, 10V | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
||
Nexperia USA Inc. |
PSMN071-100NSE/SOT1220-2/DFN20
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 12.7A (Ta) | 10V | 3.6V @ 1mA | 9.5 nC @ 10 V | 559 pF @ 50 V | ±20V | - | 31W (Ta) | 82.3mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020M-6 | 6-UDFN Exposed Pad |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
库存1,842 |
|
MOSFET (Metal Oxide) | 150 V | 19.4A (Ta), 174A (Tc) | 8V, 10V | 4.6V @ 235µA | 89 nC @ 10 V | 7000 pF @ 75 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 4.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8 | 8-PowerSMD, Gull Wing |
||
Infineon Technologies |
MOSFET N-CH 8TISON
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 4.5 V | 5214 pF @ 25 V | ±20V | - | 2.4W (Ta), 83.3W (Tc) | 3.8mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |