图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,872 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | ±20V | - | 107W (Tc) | 5.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 43A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存6,928 |
|
MOSFET (Metal Oxide) | 30V | 43A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | ±20V | - | 40W (Tc) | 13.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Microsemi Corporation |
MOSFET N-CH 18-LCC
|
封装: 18-BQFN Exposed Pad |
库存7,760 |
|
MOSFET (Metal Oxide) | 200V | 2.25A (Tc) | 10V | 4V @ 250µA | 8.6nC @ 10V | - | ±20V | - | 800mW (Ta), 15W (Tc) | 1.6 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 400V 3.5A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,688 |
|
MOSFET (Metal Oxide) | 400V | 3.5A (Tc) | 10V | 5V @ 250µA | 23nC @ 10V | 680pF @ 25V | ±30V | - | 3.13W (Ta), 85W (Tc) | 3.1 Ohm @ 1.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 400V 1.7A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存611,604 |
|
MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3.6 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1200V 1.4A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,100 |
|
MOSFET (Metal Oxide) | 1200V | 1.4A (Tc) | 10V | 4.5V @ 100µA | 24.8nC @ 10V | 666pF @ 25V | ±20V | - | 86W (Tc) | 13 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas Electronics America |
MOSFET N-CH 40V 45A LFPAK
|
封装: SC-100, SOT-669 |
库存90,000 |
|
MOSFET (Metal Oxide) | 40V | 45A (Ta) | 7V, 10V | 3V @ 1mA | 62nC @ 10V | 4650pF @ 10V | ±20V | - | 30W (Tc) | 4.2 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 85A LFPAK
|
封装: SC-100, SOT-669 |
库存5,072 |
|
MOSFET (Metal Oxide) | 100V | 85A (Tc) | 10V | 4V @ 1mA | 68nC @ 10V | 5067pF @ 25V | ±20V | - | 238W (Tc) | 12 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
STMicroelectronics |
MOSFET N-CH 600V 21A
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,664 |
|
MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 5V @ 250µA | 34nC @ 10V | 1500pF @ 100V | ±25V | - | 170W (Tc) | 160 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 120A
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存9,420 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | ±20V | - | 188W (Tc) | 3.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 600V 3.7A TO220
|
封装: TO-220-3 |
库存15,852 |
|
MOSFET (Metal Oxide) | 600V | 3.7A (Tc) | 10V | 4V @ 250µA | 4.5nC @ 10V | 165pF @ 100V | ±25V | - | 45W (Tc) | 1.4 Ohm @ 1.85A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3
|
封装: TO-251-3 Long Leads, IPak, TO-251AB |
库存6,432 |
|
MOSFET (Metal Oxide) | 900V | 6A | 10V | 5V @ 100µA | - | - | ±30V | Current Sensing | - | - | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
||
ON Semiconductor |
MOSFET N-CH 40V 40A 8WDFN
|
封装: 8-PowerWDFN |
库存5,856 |
|
MOSFET (Metal Oxide) | 40V | 16A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 30nC @ 10V | 1570pF @ 25V | ±20V | - | 3.2W (Ta), 21W (Tc) | 6.7 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 50A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,008 |
|
MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 1440pF @ 40V | ±20V | - | 75W (Tj) | 13.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 50MA S-MINI
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存3,440 |
|
MOSFET (Metal Oxide) | 20V | 50mA (Ta) | 2.5V | 1.5V @ 100µA | - | 5.5pF @ 3V | 10V | - | 200mW (Ta) | 40 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC
|
封装: TO-247-3 |
库存21,000 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 2100pF @ 25V | ±30V | - | 180W (Tc) | 580 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 160A TO263-7
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存33,594 |
|
MOSFET (Metal Oxide) | 100V | 160A (Tc) | 6V, 10V | 3.5V @ 160µA | 117nC @ 10V | 8410pF @ 50V | ±20V | - | 214W (Tc) | 3.9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Diodes Incorporated |
MOSFET P-CH 60V 280MA TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存39,924 |
|
MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 18V | ±20V | - | 700mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Vishay Siliconix |
MOSFET N-CH 30V 19A/40A PPAK SO8
|
封装: - |
库存17,970 |
|
MOSFET (Metal Oxide) | 30 V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 19 nC @ 10 V | 680 pF @ 15 V | +20V, -16V | - | 3.8W (Ta), 17W (Tc) | 6.83mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存14,988 |
|
MOSFET (Metal Oxide) | 30 V | 5A (Ta), 7.2A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 7.8 nC @ 10 V | 343 pF @ 15 V | ±20V | - | 1.5W (Ta), 3W (Tc) | 38mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 10A/51A 8PDFN
|
封装: - |
库存14,940 |
|
MOSFET (Metal Oxide) | 60 V | 10A (Ta), 51A (Tc) | 10V | 4V @ 250µA | 36 nC @ 10 V | 2380 pF @ 30 V | ±20V | - | 3.1W (Ta), 83W (Tc) | 13mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5.2x5.75) | 8-PowerLDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 101V~250V POWERDI5
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 120 V | 84A (Tc) | 6V, 10V | 4V @ 250µA | 44 nC @ 10 V | 3142 pF @ 60 V | ±20V | - | 3.5W | 8.9mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Nexperia USA Inc. |
NEXTPOWER 80/100V MOSFETS
|
封装: - |
库存1,608 |
|
MOSFET (Metal Oxide) | 100 V | 111A (Ta) | 7V, 10V | 4V @ 1mA | 75 nC @ 10 V | 4818 pF @ 50 V | ±20V | - | 194W (Ta) | 6.9mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Renesas Electronics Corporation |
MOSFET P-CH 12V 9A 8TSSOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 9A (Ta) | - | 1.5V @ 1mA | 15 nC @ 4 V | 1570 pF @ 10 V | - | - | - | 15mOhm @ 4.5A, 4.5V | - | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Nexperia USA Inc. |
SMALL SIGNAL MOSFET FOR MOBILE
|
封装: - |
库存18,000 |
|
MOSFET (Metal Oxide) | 20 V | 11.6A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 30 nC @ 4.5 V | 1696 pF @ 10 V | ±12V | - | 1.9W (Ta), 12.5W (Tc) | 9mOhm @ 11.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020M-6 | 6-UDFN Exposed Pad |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 3.9A (Tc) | 10V | 4V @ 250µA | 120 nC @ 10 V | - | ±20V | - | 150W (Tc) | 4.2Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 70A 8SOP
|
封装: - |
库存102,927 |
|
MOSFET (Metal Oxide) | 100 V | 70A (Ta) | 6V, 10V | 3.5V @ 1mA | 75 nC @ 10 V | 4970 pF @ 10 V | ±20V | - | 960mW (Ta), 170W (Tc) | 4.1mOhm @ 35A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Inventchip |
SIC MOSFET, 1200V 50MOHM, TO-247
|
封装: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 3.2V @ 6mA | 120 nC @ 20 V | 2750 pF @ 800 V | +20V, -5V | - | 344W (Tc) | 65mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Vishay Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8
|
封装: - |
库存8,682 |
|
MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 83 nC @ 10 V | 4450 pF @ 10 V | +16V, -12V | - | 65.7W (Tc) | 1.2mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |