图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 200V 16A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,048 |
|
MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | ±30V | - | 3.8W (Ta), 140W (Tc) | 170 mOhm @ 9.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 30A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存272,484 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 25µA | 11nC @ 5V | 700pF @ 25V | ±20V | - | 60W (Tc) | 20 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223
|
封装: TO-261-4, TO-261AA |
库存3,744 |
|
MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | ±20V | - | 1.8W (Ta) | 45 Ohm @ 120mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET P-CH 12V 9.5A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存7,904 |
|
MOSFET (Metal Oxide) | 12V | 9.5A (Ta) | 2.5V, 4.5V | 600mV @ 250µA | 74nC @ 5V | 6000pF @ 10V | ±12V | - | 2.5W (Ta) | 20 mOhm @ 9.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 55A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存2,064 |
|
MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | ±16V | - | 107W (Tc) | 19 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 55V 61A TO-220AB
|
封装: TO-220-3 |
库存391,020 |
|
MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | ±20V | - | 91W (Tc) | 11 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 2.6A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存6,896 |
|
MOSFET (Metal Oxide) | 30V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 9nC @ 10V | 370pF @ 15V | ±20V | - | 1.4W (Ta) | 130 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 12V 17A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存187,248 |
|
MOSFET (Metal Oxide) | 12V | 17A (Ta) | 1.8V, 4.5V | 400mV @ 250µA (Min) | 75nC @ 4.5V | - | ±8V | - | 1.6W (Ta) | 3 mOhm @ 25A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 620V 2.5A TO220
|
封装: TO-220-3 |
库存7,216 |
|
MOSFET (Metal Oxide) | 620V | 2.5A (Tc) | 10V | 4.5V @ 50µA | 17nC @ 10V | 386pF @ 50V | ±30V | - | 45W (Tc) | 3 Ohm @ 1.25A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 800V 27A SOT-227B
|
封装: SOT-227-4, miniBLOC |
库存5,568 |
|
MOSFET (Metal Oxide) | 800V | 27A | 10V | 4.5V @ 4mA | 170nC @ 10V | 7600pF @ 25V | ±20V | - | 520W (Tc) | 320 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 75V 230A TO-263
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存5,504 |
|
MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4V @ 250µA | 178nC @ 10V | 10500pF @ 25V | ±20V | - | 480W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
||
Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存5,216 |
|
MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 740mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Vishay Siliconix |
MOSFET N-CH 200V 2.85A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存227,268 |
|
MOSFET (Metal Oxide) | 200V | 2.85A (Ta) | 6V, 10V | 2V @ 250µA (Min) | 42nC @ 10V | - | ±20V | - | 1.56W (Ta) | 80 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET P-CH 20V 0.2A UMT3F
|
封装: SC-85 |
库存120,012 |
|
MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | 1.4nC @ 4.5V | 115pF @ 10V | ±10V | - | 150mW (Ta) | 1.2 Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
||
Vishay Siliconix |
MOSFET P-CH 30V 19.7A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存453,720 |
|
MOSFET (Metal Oxide) | 30V | 19.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 80nC @ 10V | 2610pF @ 15V | ±20V | - | 2.5W (Ta), 5.7W (Tc) | 9.8 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 120A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存18,444 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 1mA | 118nC @ 10V | 9700pF @ 25V | ±20V | - | 324W (Tc) | 1.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存42,660 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CHANNEL 40V 19A 8SOIC
|
封装: - |
库存14,196 |
|
MOSFET (Metal Oxide) | 40 V | 19A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 51 nC @ 10 V | 2406 pF @ 20 V | ±20V | - | 6W (Tc) | 8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 500V 26A TO263
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 4V @ 250µA | 86 nC @ 10 V | 1980 pF @ 100 V | ±30V | - | 250W (Tc) | 145mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MOSLEADER |
P -30V -2.8A SOT-23N
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存8,940 |
|
MOSFET (Metal Oxide) | 40 V | 12A (Ta), 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22 nC @ 10 V | 1258 pF @ 25 V | ±20V | - | 2W (Ta), 70W (Tc) | 9.5mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
Diotec Semiconductor |
MOSFET POWERQFN 2X2 P -20V -6A 0
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 13 nC @ 4.5 V | 1242 pF @ 10 V | ±12V | - | 2W (Tc) | 25mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (2x2) | 8-PowerUDFN |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -5.8A, -20
|
封装: - |
库存17,895 |
|
MOSFET (Metal Oxide) | 20 V | 5.8A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 25 nC @ 4.5 V | 2100 pF @ 15 V | ±10V | - | 1.56W (Tc) | 33mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
N-CHANNEL 650 V, 39 MOHM TYP., 5
|
封装: - |
库存300 |
|
MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 4.2V @ 250µA | 80 nC @ 10 V | 4610 pF @ 400 V | ±30V | - | 312W (Tc) | 45mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Cambridge GaN Devices |
650V GAN HEMT, 200MOHM, DFN5X6.
|
封装: - |
库存13,071 |
|
GaNFET (Gallium Nitride) | 650 V | 8.5A (Tc) | 9V, 20V | 4.2V @ 2.75mA | 1.4 nC @ 12 V | - | +20V, -1V | Current Sensing | - | 280mOhm @ 600mA, 12V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerVDFN |
||
Micro Commercial Co |
SCHOTTKY DIODES
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 80A (Tc) | 16V, 20V | 3V @ 15mA | 168 nC @ 18 V | 3570 pF @ 1000 V | +22V, -5V | - | 375W (Tc) | 30mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
onsemi |
MOSFET N-CH 60V 9A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 10V | 4V @ 250µA | 15 nC @ 10 V | 280 pF @ 25 V | ±20V | - | 28.8W (Ta) | 150mOhm @ 4.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
|
封装: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 650 V | 54A (Tc) | 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | 1393 pF @ 400 V | +23V, -5V | - | 211W (Tc) | 51mOhm @ 25A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |