图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 200V 18A TO262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,392 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | ±20V | - | 100W (Tc) | 105 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Diodes Incorporated |
MOSFET P-CH 60V 0.28A TO92-3
|
封装: E-Line-3 |
库存3,168 |
|
MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 18V | ±20V | - | 700mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Panasonic Electronic Components |
MOSFET N-CH 50V 100MA SMINI-3
|
封装: SC-70, SOT-323 |
库存2,704 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 5V | 3.5V @ 100µA | - | 15pF @ 5V | 8V | - | 150mW (Ta) | 50 Ohm @ 20mA, 5V | 150°C (TJ) | Surface Mount | SMini3-G1 | SC-70, SOT-323 |
||
Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC
|
封装: TO-247-3 |
库存5,216 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 124nC @ 10V | 3540pF @ 25V | ±30V | - | 280W (Tc) | 240 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 25V 8.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存436,368 |
|
MOSFET (Metal Oxide) | 25V | 8.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 14nC @ 4.5V | 1330pF @ 20V | ±20V | - | 1.25W (Ta), 58W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存9,936 |
|
MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 4V @ 250µA | 68nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 125W (Tc) | 280 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH TO263-7
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存5,952 |
|
MOSFET (Metal Oxide) | 80V | 140A (Tc) | 10V | 4V @ 100µA | 80nC @ 10V | 5500pF @ 25V | ±20V | - | 161W (Tc) | 4.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET P-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,760 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 176nC @ 10V | 3800pF @ 25V | ±16V | - | 125W (Tc) | 4.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 200V 97A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存5,328 |
|
MOSFET (Metal Oxide) | 200V | 97A | 10V | 4V @ 2.5mA | 290nC @ 10V | 8500pF @ 25V | ±30V | - | 450W (Tc) | 22 mOhm @ 48.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
Microsemi Corporation |
MOSFET N-CH 600V 60A TO-247
|
封装: TO-247-3 Variant |
库存7,744 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | - | 1040W (Tc) | 110 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存3,616 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 65nC @ 10V | 2922pF @ 20V | ±20V | - | 55W (Tc) | 4.5 mOhm @ 15.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Nexperia USA Inc. |
MOSFET P-CH 240V 0.2A SOT89
|
封装: TO-243AA |
库存3,200 |
|
MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 10V | 2.8V @ 1mA | - | 90pF @ 25V | ±20V | - | 560mW (Ta), 12.5W (Tc) | 12 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
||
Infineon Technologies |
MOSFET N-CH 12V 15A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存95,400 |
|
MOSFET (Metal Oxide) | 12V | 15A (Ta) | 2.8V, 4.5V | 1.9V @ 250µA | 40nC @ 4.5V | 2550pF @ 6V | ±12V | - | 2.5W (Ta) | 8 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 60V 22A 8VSON
|
封装: 8-PowerTDFN |
库存4,672 |
|
MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 6V, 10V | 3.4V @ 250µA | 64nC @ 10V | 5340pF @ 30V | ±20V | - | 3.2W (Ta) | 3.4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 55A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存224,922 |
|
MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 2V @ 1mA | 48nC @ 5V | 2916pF @ 25V | ±15V | - | 115W (Tc) | 13.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 70A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存531,144 |
|
MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 2.2V @ 30µA | 48nC @ 10V | 3300pF @ 25V | ±16V | - | 68W (Tc) | 4.3 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
封装: 8-PowerWDFN |
库存48,732 |
|
MOSFET (Metal Oxide) | 60V | 260A (Tc) | 4.5V, 10V | - | - | - | ±20V | - | 960mW (Ta), 170W (Tc) | - | - | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 1.7A SSOT3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存2,301,660 |
|
MOSFET (Metal Oxide) | 30V | 1.7A (Ta) | 4.5V, 10V | 2V @ 250µA | 5nC @ 5V | 195pF @ 15V | ±20V | - | 500mW (Ta) | 85 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
||
Goford Semiconductor |
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
|
封装: - |
库存18,432 |
|
MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 46 nC @ 10 V | 1600 pF @ 30 V | ±20V | - | 2.1W (Tc) | 22mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 650V 11.4A D2PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104.2W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Renesas Electronics Corporation |
N CHANNEL 30V, 30A, POWER SWITCH
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 800V 5.4A DPAK
|
封装: - |
库存6,186 |
|
MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 4V @ 250µA | 44 nC @ 10 V | 827 pF @ 100 V | ±30V | - | 78W (Tc) | 940mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
YAGEO XSEMI |
MOSFET N-CH 100V 48.5A TO251S
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 100 V | 48.5A (Tc) | 6V, 10V | 4V @ 250µA | 56 nC @ 10 V | 2288 pF @ 80 V | ±20V | - | 1.13W (Ta), 50W (Tc) | 11mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251S | TO-251-3 Short Leads, IPAK, TO-251AA |
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Vishay Siliconix |
AUTOMOTIVE P-CHANNEL 20 V (D-S)
|
封装: - |
库存14,520 |
|
MOSFET (Metal Oxide) | 20 V | 3.75A (Tc) | 2.5V, 4.5V | 1.3V @ 250µA | 5.5 nC @ 4.5 V | 330 pF @ 10 V | ±12V | - | 13.6W (Tc) | 125mOhm @ 2.4A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 8SOIC
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Transphorm |
GANFET N-CH 900V 15A TO220AB
|
封装: - |
Request a Quote |
|
GaNFET (Cascode Gallium Nitride FET) | 900 V | 15A (Tc) | 10V | 2.6V @ 500µA | 10 nC @ 8 V | 780 pF @ 600 V | ±18V | - | 78W (Tc) | 205mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
MOSFET N-CH 650V 76A TO247-4
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 5V @ 7.6mA | 298 nC @ 10 V | 12560 pF @ 100 V | ±20V | - | 595W (Tc) | 41mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Vishay Siliconix |
MOSFET N-CH 80V 10.2A/25.5A PPAK
|
封装: - |
库存35,967 |
|
MOSFET (Metal Oxide) | 80 V | 10.2A (Ta), 25.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1250 pF @ 40 V | ±20V | - | 3.6W (Ta), 22.3W (Tc) | 15.6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 43.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 11.2 nC @ 10 V | 750 pF @ 20 V | ±20V | - | 4W (Ta), 46.9W (Tc) | 14.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 100V 110A TO268
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 4.5V @ 250µA | 260 nC @ 10 V | 10500 pF @ 25 V | ±20V | - | 600W (Tc) | 18mOhm @ 55A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 (IXTT) | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |