图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,416 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | ±20V | - | 300W (Tc) | 2.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 100A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,592 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | ±20V | - | 2.4W (Ta), 170W (Tc) | 9 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 100V 225A ISOTOP
|
封装: SOT-227-4, miniBLOC |
库存7,952 |
|
MOSFET (Metal Oxide) | 100V | 225A (Tc) | 10V | 4V @ 5mA | 1050nC @ 10V | 21600pF @ 25V | ±30V | - | 700W (Tc) | - | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 500V 4.8A TO-252AA
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,928 |
|
MOSFET (Metal Oxide) | 500V | 4.8A (Tc) | 10V | 5.5V @ 50µA | 12.6nC @ 10V | 620pF @ 25V | ±30V | - | 89W (Tc) | 1.4 Ohm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 15.6A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,056 |
|
MOSFET (Metal Oxide) | 250V | 15.6A (Tc) | 10V | 4V @ 250µA | 53.5nC @ 10V | 1080pF @ 25V | ±30V | - | 3.13W (Ta), 139W (Tc) | 270 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 20A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存42,264 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 3V @ 250µA | 69nC @ 10V | 3300pF @ 15V | ±20V | - | 3W (Ta) | 4.5 mOhm @ 20.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microchip Technology |
MOSFET P-CH 16V 1A SOT-143
|
封装: TO-253-4, TO-253AA |
库存138,000 |
|
MOSFET (Metal Oxide) | 16V | 1A (Ta) | 2.7V, 10V | 1.4V @ 250µA | - | 100pF @ 12V | 16V | - | 568mW (Ta) | 450 mOhm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-143 | TO-253-4, TO-253AA |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,952 |
|
MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 150V 38A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,032 |
|
MOSFET (Metal Oxide) | 150V | 38A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Panasonic Electronic Components |
MOSFET N-CH 20V 2A SC113DA
|
封装: 6-SMD, Flat Leads |
库存3,472 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4V | 1.3V @ 1mA | - | 280pF @ 10V | ±10V | Schottky Diode (Isolated) | 700mW (Ta) | 105 mOhm @ 1A, 4V | 125°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
||
ON Semiconductor |
MOSFET N-CH 25V 1A SOT-363
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存1,496,580 |
|
MOSFET (Metal Oxide) | 25V | 1A (Ta) | 2.7V, 4.5V | 1.5V @ 250µA | 1.5nC @ 4.5V | 60pF @ 10V | ±8V | - | 630mW (Ta) | 350 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V SOT523
|
封装: SOT-523 |
库存4,720 |
|
MOSFET (Metal Oxide) | 30V | 350mA (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 0.35nC @ 4.5V | 13.6pF @ 15V | ±12V | - | 320mW | 1.5 Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
STMicroelectronics |
MOSFET N-CH 500V 10A TO-220
|
封装: TO-220-3 |
库存328,452 |
|
MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 4.5V @ 100µA | 68nC @ 10V | 1390pF @ 25V | ±30V | - | 125W (Tc) | 520 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 9A 4VSON
|
封装: 4-PowerTSFN |
库存7,712 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 3.5V @ 340µA | 17nC @ 10V | 790pF @ 100V | ±20V | - | 83W (Tc) | 385 mOhm @ 5.2A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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IXYS |
2000V TO 3000V POLAR3 POWER MOSF
|
封装: TO-247-3 |
库存4,368 |
|
MOSFET (Metal Oxide) | 3000V | 2A (Tc) | 10V | 5V @ 250µA | 73nC @ 10V | 1890pF @ 25V | ±20V | - | 520W (Tc) | 21 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 5A TO-220AB
|
封装: TO-220-3 |
库存18,816 |
|
MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 4V @ 250µA | 9nC @ 10V | 270pF @ 100V | ±25V | - | 60W (Tc) | 1.15 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 100A POWERDI506
|
封装: 8-PowerTDFN |
库存5,840 |
|
MOSFET (Metal Oxide) | 60V | 20.6A (Ta), 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 47.1nC @ 10V | 2962pF @ 30V | ±20V | - | 3.2W (Ta), 150W (Tc) | 5.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 12.8A TO-220
|
封装: TO-220-3 |
库存5,040 |
|
MOSFET (Metal Oxide) | 100V | 12.8A (Tc) | 5V, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | ±20V | - | 65W (Tc) | 180 mOhm @ 6.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
|
封装: 8-PowerTDFN |
库存138,888 |
|
MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 173nC @ 10V | 13000pF @ 15V | ±20V | - | 2.5W (Ta), 125W (Tc) | 1.6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 0.31A SOT323
|
封装: SC-70, SOT-323 |
库存342,000 |
|
MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 10V | 2.4V @ 250µA | 0.8nC @ 4.5V | 50pF @ 10V | ±20V | - | 260mW (Ta) | 1.6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
||
Rohm Semiconductor |
NCH 150V 35A, HSOP8, POWER MOSFE
|
封装: - |
库存7,362 |
|
MOSFET (Metal Oxide) | 150 V | 35A (Tc) | 6V, 10V | 4V @ 1mA | 25 nC @ 10 V | 1470 pF @ 75 V | ±20V | - | 3W (Ta), 73W (Tc) | 41mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
Micro Commercial Co |
MOSFET N-CH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 4A | 10V | 4V @ 250µA | 10 nC @ 10 V | 760 pF @ 25 V | ±30V | - | - | 3Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251S | TO-251-3 Stub Leads, IPAK |
||
onsemi |
MOSFET N-CH 40V 90A D2PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 3V @ 250µA | 68 nC @ 10 V | 3360 pF @ 20 V | ±20V | - | 94W (Tj) | 2.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V X2-DFN1006
|
封装: - |
库存19,356 |
|
MOSFET (Metal Oxide) | 30 V | 1.3A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 0.9 nC @ 4.5 V | 40.8 pF @ 25 V | ±8V | - | 490mW (Ta) | 460mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
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Motorola |
MOSFET N-CH 60V 1.5A MICRO8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 1.5A (Ta) | - | 3V @ 250µA | 26 nC @ 10 V | 200 pF @ 25 V | ±20V | - | 1.25W (Ta) | 220mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Goford Semiconductor |
P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 106 nC @ 10 V | 6586 pF @ 20 V | ±20V | - | 130W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
SILICON CARBIDE (SIC) MOSFET - 4
|
封装: - |
库存2,205 |
|
SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | 1473 pF @ 325 V | +22V, -8V | - | 170W (Tc) | 70mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
MOSFET 800V TDSON-8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
onsemi |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 3.5A SOT23-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 1.8V, 10V | 1.2V @ 250µA | 10 nC @ 4.5 V | 325 pF @ 10 V | ±12V | - | 1.4W (Ta) | 85mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant |