页 282 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  282/1,401
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF8327STR1PBF
Infineon Technologies

MOSFET N-CH 30V 14A SQ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 14A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SQ
  • Package / Case: DirectFET? Isometric SQ
封装: DirectFET? Isometric SQ
库存2,528
MOSFET (Metal Oxide)
30V
14A (Ta), 60A (Tc)
4.5V, 10V
2.4V @ 25µA
14nC @ 4.5V
1430pF @ 15V
±20V
-
2.2W (Ta), 42W (Tc)
7.3 mOhm @ 14A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? SQ
DirectFET? Isometric SQ
IRL3402S
Infineon Technologies

MOSFET N-CH 20V 85A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,360
MOSFET (Metal Oxide)
20V
85A (Tc)
4.5V, 7V
700mV @ 250µA
78nC @ 4.5V
3300pF @ 15V
±10V
-
110W (Tc)
8 mOhm @ 51A, 7V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AO4476AL_102
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,648
MOSFET (Metal Oxide)
30V
15A (Ta)
4.5V, 10V
2.5V @ 250µA
24nC @ 10V
1380pF @ 15V
±20V
-
3.1W (Ta)
7.7 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
RJK6014DPK-00#T0
Renesas Electronics America

MOSFET N-CH 600V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 575 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存3,408
MOSFET (Metal Oxide)
600V
16A (Ta)
10V
-
45nC @ 10V
1800pF @ 25V
±30V
-
150W (Tc)
575 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
TPCA8005-H(TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 27A SOP-8 ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存4,224
MOSFET (Metal Oxide)
30V
27A (Ta)
4.5V, 10V
2.3V @ 1mA
24nC @ 10V
1395pF @ 10V
±20V
-
1.6W (Ta), 45W (Tc)
9 mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
hot SI4486EY-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 5.4A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存125,040
MOSFET (Metal Oxide)
100V
5.4A (Ta)
6V, 10V
2V @ 250µA (Min)
44nC @ 10V
-
±20V
-
1.8W (Ta)
25 mOhm @ 7.9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI3483DV-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 4.7A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.14W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存310,224
MOSFET (Metal Oxide)
30V
4.7A (Ta)
4.5V, 10V
3V @ 250µA
35nC @ 10V
-
±20V
-
1.14W (Ta)
35 mOhm @ 6.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
IXFV96N15P
IXYS

MOSFET N-CH 150V 96A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
封装: TO-220-3, Short Tab
库存4,544
MOSFET (Metal Oxide)
150V
96A (Tc)
10V
5V @ 4mA
110nC @ 10V
3500pF @ 25V
±20V
-
480W (Tc)
24 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IRF510STRR
Vishay Siliconix

MOSFET N-CH 100V 5.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,720
MOSFET (Metal Oxide)
100V
5.6A (Tc)
10V
4V @ 250µA
8.3nC @ 10V
180pF @ 25V
±20V
-
3.7W (Ta), 43W (Tc)
540 mOhm @ 3.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB160N04S4LH1ATMA1
Infineon Technologies

MOSFET N-CH TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14950pF @ 25V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
封装: TO-263-7, D2Pak (6 Leads + Tab)
库存5,200
MOSFET (Metal Oxide)
40V
160A (Tc)
4.5V, 10V
2.2V @ 110µA
190nC @ 10V
14950pF @ 25V
+20V, -16V
-
167W (Tc)
1.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D2Pak (6 Leads + Tab)
IXTH20N60
IXYS

MOSFET N-CH 600V 20A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存2,560
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4.5V @ 250µA
170nC @ 10V
4500pF @ 25V
±20V
-
300W (Tc)
350 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
FQB22P10TM_F085
Fairchild/ON Semiconductor

MOSFET P-CH 100V 22A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,432
MOSFET (Metal Oxide)
100V
22A (Tc)
10V
4V @ 250µA
50nC @ 10V
1500pF @ 25V
±30V
-
3.75W (Ta), 125W (Tc)
125 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SKI07171
Sanken

MOSFET N-CH 75V 46A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 650µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 22.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,456
MOSFET (Metal Oxide)
75V
46A (Tc)
4.5V, 10V
2.5V @ 650µA
36.2nC @ 10V
2520pF @ 25V
±20V
-
90W (Tc)
13.6 mOhm @ 22.8A, 10V
150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HTNFET-T
Honeywell Microelectronics & Precision Sensors

MOSFET N-CH 55V 4-PIN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V
  • Vgs (Max): 10V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tj)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 100mA, 5V
  • Operating Temperature: -55°C ~ 225°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-Power Tab
  • Package / Case: 4-SIP
封装: 4-SIP
库存6,464
MOSFET (Metal Oxide)
55V
-
5V
2.4V @ 100µA
4.3nC @ 5V
290pF @ 28V
10V
-
50W (Tj)
400 mOhm @ 100mA, 5V
-55°C ~ 225°C (TJ)
Through Hole
4-Power Tab
4-SIP
hot CSD18534KCS
Texas Instruments

MOSFET N-CH 60V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存193,872
MOSFET (Metal Oxide)
60V
45A (Ta), 100A (Tc)
4.5V, 10V
2.3V @ 250µA
24nC @ 10V
1880pF @ 30V
±20V
-
107W (Tc)
9.5 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDB0105N407L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 460A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23100pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
封装: TO-263-7, D2Pak (6 Leads + Tab)
库存2,176
MOSFET (Metal Oxide)
40V
460A (Tc)
6V, 10V
4V @ 250µA
291nC @ 10V
23100pF @ 20V
±20V
-
3.8W (Ta), 300W (Tc)
0.8 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab)
TPN2R703NL,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 45A 8-TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存94,590
MOSFET (Metal Oxide)
30V
45A (Tc)
4.5V, 10V
2.3V @ 300µA
21nC @ 10V
2100pF @ 15V
±20V
-
700mW (Ta), 42W (Tc)
2.7 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
8-TSON Advance (3.3x3.3)
8-PowerVDFN
hot BSC080P03LS G
Infineon Technologies

MOSFET P-CH 30V 30A TDSON-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存69,828
MOSFET (Metal Oxide)
30V
16A (Ta), 30A (Tc)
10V
2.2V @ 250µA
122.4nC @ 10V
6140pF @ 15V
±25V
-
2.5W (Ta), 89W (Tc)
8 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
hot SPA17N80C3
Infineon Technologies

MOSFET N-CH 800V 17A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存486,456
MOSFET (Metal Oxide)
800V
17A (Tc)
10V
3.9V @ 1mA
177nC @ 10V
2320pF @ 25V
±20V
-
42W (Tc)
290 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3 Full Pack
hot PSMN2R0-60PS,127
Nexperia USA Inc.

MOSFET N-CH 60V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9997pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 338W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存14,532
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 1mA
137nC @ 10V
9997pF @ 30V
±20V
-
338W (Tc)
2.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHD5N80AE-GE3
Vishay Siliconix

E SERIES POWER MOSFET DPAK (TO-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存10,566
MOSFET (Metal Oxide)
800 V
4.4A (Tc)
10V
4V @ 250µA
16.5 nC @ 10 V
321 pF @ 100 V
±30V
-
62.5W (Tc)
1.35Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP22D5UFB4-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 460mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
20 V
400mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.3 nC @ 4.5 V
17 pF @ 15 V
±8V
-
460mW (Ta)
1.9Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
AOY66620
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251B
  • Package / Case: TO-251-3 Stub Leads, IPAK
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
20A (Ta), 58A (Tc)
8V, 10V
3.6V @ 250µA
25 nC @ 10 V
1070 pF @ 30 V
±20V
-
6.2W (Ta), 52W (Tc)
8.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
IRF7478TRPBF-1
Infineon Technologies

MOSFET N-CH 60V 7A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
7A (Ta)
4.5V, 10V
3V @ 250µA
31 nC @ 4.5 V
1740 pF @ 25 V
±20V
-
2.5W (Ta)
26mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
ISL9N304AS3ST
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 145W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
75A (Tc)
4.5V, 10V
3V @ 250µA
105 nC @ 10 V
4075 pF @ 15 V
±20V
-
145W (Ta)
4.5mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDC642P-F085
onsemi

MOSFET P-CH 20V 4A SUPERSOT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT™-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
Request a Quote
MOSFET (Metal Oxide)
20 V
4A (Ta)
2.5V, 4.5V
1.5V @ 250µA
16 nC @ 4.5 V
640 pF @ 10 V
±8V
-
1.2W (Ta)
65mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
TPCA8052-H-T2L1-VM
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封装: -
库存42,255
MOSFET (Metal Oxide)
40 V
20A (Ta)
4.5V, 10V
2.3V @ 200µA
25 nC @ 10 V
2110 pF @ 10 V
±20V
-
1.6W (Ta), 30W (Tc)
11.3mOhm @ 10A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TPHR6503PL1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=210W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
封装: -
库存7,107
MOSFET (Metal Oxide)
30 V
150A (Tc)
4.5V, 10V
2.1V @ 1mA
110 nC @ 10 V
10000 pF @ 15 V
±20V
-
960mW (Ta), 210W (Tc)
0.65mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
IXTT4N150HV-TRL
IXYS

MOSFET N-CH 1500V 4A TO268HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV (IXTT)
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
1500 V
4A (Tc)
10V
5V @ 250µA
44.5 nC @ 10 V
1576 pF @ 25 V
±30V
-
280W (Tc)
6Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268HV (IXTT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
SIHA11N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 8A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封装: -
库存2,721
MOSFET (Metal Oxide)
800 V
8A (Tc)
10V
4V @ 250µA
42 nC @ 10 V
804 pF @ 100 V
±30V
-
31W (Tc)
450mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack