图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 20V 9A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,256 |
|
MOSFET (Metal Oxide) | 20V | 9A (Ta) | 2.5V, 4.5V | 1.2V @ 100µA | 50.4nC @ 4.5V | 2265pF @ 15V | ±12V | - | 2.35W (Ta) | 21 mOhm @ 9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 24A 8DFN
|
封装: 8-PowerVDFN |
库存6,976 |
|
MOSFET (Metal Oxide) | 60V | 34.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 11nC @ 4.5V | 1610pF @ 30V | ±20V | - | 34.7W (Tc) | 15 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
||
Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205
|
封装: TO-205AD, TO-39-3 Metal Can |
库存2,640 |
|
MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 2V @ 1mA | - | 50pF @ 25V | ±20V | - | 725mW (Ta), 6.25W (Tc) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
||
IXYS |
MOSFET N-CH 900V 12A PLUS220SMD
|
封装: PLUS-220SMD |
库存3,376 |
|
MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 6.5V @ 1mA | 56nC @ 10V | 3080pF @ 25V | ±30V | - | 380W (Tc) | 900 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 9A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,864 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 5V, 10V | 2V @ 250µA | 21nC @ 5V | 1080pF @ 25V | ±20V | - | 2.5W (Ta), 55W (Tc) | 280 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1KV 12.5A TO-268
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,072 |
|
MOSFET (Metal Oxide) | 1000V | 12.5A (Tc) | 10V | 4.5V @ 4mA | 155nC @ 10V | 4000pF @ 25V | ±20V | - | 300W (Tc) | 900 mOhm @ 500mA, 10V | - | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
NXP |
MOSFET N-CH 30V 84A LFPAK
|
封装: SC-100, SOT-669 |
库存5,104 |
|
MOSFET (Metal Oxide) | 30V | 84A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 22.9nC @ 4.5V | 2786pF @ 12V | ±20V | - | 62.5W (Tc) | 4.8 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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STMicroelectronics |
MOSFET N-CH 200V 20A PWRFLAT6X5
|
封装: 8-PowerVDFN |
库存5,600 |
|
MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 800pF @ 25V | ±30V | - | 80W (Tc) | 105 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (6x5) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 560V 9A TO-247
|
封装: TO-247-3 |
库存2,640 |
|
MOSFET (Metal Oxide) | 560V | 9A (Tc) | 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | ±20V | - | 83W (Tc) | 399 mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 600V TO-3PH
|
封装: - |
库存3,200 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
MOSFET N-CH 55V 100A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存31,596 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 2.8V @ 1mA | 124nC @ 10V | 7750pF @ 25V | ±16V | - | 204W (Tc) | 4.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET P-CH 30V 4A POWERFLAT
|
封装: 6-PowerWDFN |
库存28,764 |
|
MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 6nC @ 4.5V | 639pF @ 25V | ±20V | - | 2.4W (Ta) | 56 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | PowerFlat? (2x2) | 6-PowerWDFN |
||
EPC |
TRANS GAN 150V 7MOHM BUMPED DIE
|
封装: Die |
库存31,656 |
|
GaNFET (Gallium Nitride) | 150V | 31A (Ta) | - | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | - | 7 mOhm @ 25A, 5V | - | Surface Mount | Die | Die |
||
Diodes Incorporated |
MOSFET N-CH 50V 500MA SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存594,036 |
|
MOSFET (Metal Oxide) | 50V | 500mA (Ta) | 4.5V, 10V | 1.5V @ 250µA | 0.8nC @ 10V | 40pF @ 10V | ±20V | - | 600mW (Ta) | 1.8 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Microsemi Corporation |
MOSFET N-CH 100V 8A 18ULCC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | - | ±20V | - | 25W (Tc) | 185mOhm @ 8A, 12V | -55°C ~ 150°C | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
||
International Rectifier |
IRFH7921 - HEXFET POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 15A (Ta), 34A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 14 nC @ 4.5 V | 1210 pF @ 15 V | ±20V | - | 3.1W (Ta) | 8.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 21.3A 4VSON
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 21.3A (Tc) | 10V | 4.5V @ 900µA | 86 nC @ 10 V | 2340 pF @ 100 V | ±20V | - | 195W (Tc) | 165mOhm @ 9.3A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 7A 6TSOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17 nC @ 10 V | 820 pF @ 15 V | ±20V | - | 2W (Ta) | 27mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
Taiwan Semiconductor Corporation |
-60V, -18A, SINGLE P-CHANNEL POW
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 16.4 nC @ 10 V | 870 pF @ 30 V | ±20V | - | 20W (Tc) | 68mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251S (IPAK SL) | TO-251-3 Stub Leads, IPAK |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 400 V | 3.3A (Tj) | 10V | 4V @ 250µA | 18 nC @ 10 V | 600 pF @ 25 V | ±30V | - | 33W (Tc) | 1.75Ohm @ 1.65A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
onsemi |
MOSFET, POWER, SINGLE N-CHANNEL,
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 54A (Ta), 337A (Tc) | 4.5V, 10V | 2.2V @ 200µA | 50 nC @ 4.5 V | 7690 pF @ 15 V | ±20V | - | 3.8W (Ta), 150W (Tc) | 0.74mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Central Semiconductor Corp |
MOSFET P-CH 30V 11A DIE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 80 nC @ 10 V | 3100 pF @ 8 V | ±20V | - | - | 13mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Goford Semiconductor |
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
|
封装: - |
库存22,206 |
|
MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 2V @ 250µA | 24.5 nC @ 10 V | 1253 pF @ 15 V | ±20V | - | 30W (Tc) | 20mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3.15x3.05) | 8-PowerVDFN |
||
Goford Semiconductor |
MOSFET P-CH 100V 4.3A TO-252
|
封装: - |
库存6,960 |
|
MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 3V @ 250µA | 10 nC @ 10 V | 247 pF @ 50 V | ±20V | - | 25W (Tc) | 670mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
NFET T0220 60V 0.12R
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
650V SILICON CARBIDE MOSFET
|
封装: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | 15V | 3.5V @ 6mA | 39.4 nC @ 15 V | 1165 pF @ 400 V | +15V, -5V | - | 103W (Tc) | 80mOhm @ 6A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 4V @ 250µA | 300 nC @ 10 V | 8970 pF @ 50 V | ±20V | - | 375W (Tc) | 2.5mOhm @ 170A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Renesas Electronics Corporation |
ABU / MOSFET
|
封装: - |
库存732 |
|
MOSFET (Metal Oxide) | 1500 V | 2A (Ta) | 15V | 4V @ 1mA | - | 990 pF @ 10 V | ±20V | - | 50W (Tc) | 12Ohm @ 1A, 15V | 150°C | Through Hole | TO-3PFM | TO-220-3 Full Pack |
||
Taiwan Semiconductor Corporation |
600V, 24A, SINGLE N-CHANNEL POWE
|
封装: - |
库存12,000 |
|
MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 5V @ 1mA | 44 nC @ 10 V | 1857 pF @ 300 V | ±30V | - | 89W (Tc) | 165mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
onsemi |
MOSFET N-CH 60V 6A/22A DPAK-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 6A (Ta), 22A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 15 nC @ 10 V | 675 pF @ 25 V | ±20V | - | 3.3W (Ta), 43W (Tc) | 39mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |