图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 14A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存251,772 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 32nC @ 10V | 740pF @ 25V | ±20V | - | 56W (Tc) | 115 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 161A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存2,656 |
|
MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 50nC @ 4.5V | 4380pF @ 15V | ±20V | - | 140W (Tc) | 3.3 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存390,000 |
|
MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | - | 88W (Tc) | 8.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 5A TO-220F
|
封装: TO-220-3 Full Pack |
库存94,956 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 5V @ 250µA | 16.6nC @ 10V | 940pF @ 25V | ±30V | - | 39W (Tc) | 1.5 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 75V 100A
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,680 |
|
MOSFET (Metal Oxide) | 75V | 100A (Ta) | 4V, 10V | - | 220nC @ 10V | 12200pF @ 20V | ±20V | - | 1.65W (Ta), 90W (Tc) | 6 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | TO-263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas Electronics America |
MOSFET N-CH 30V 100A 8SON
|
封装: 8-PowerVDFN |
库存6,032 |
|
MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | - | 152nC @ 10V | 6550pF @ 10V | ±20V | - | 1.5W (Ta), 83W (Tc) | 2.9 mOhm @ 32A, 4.5V | 150°C (TJ) | Surface Mount | 8-HVSON (5.4x5.15) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 16.3A 8-WDFN
|
封装: 8-PowerWDFN |
库存50,508 |
|
MOSFET (Metal Oxide) | 30V | 16.3A (Ta), 64A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 29.4nC @ 10V | 2075pF @ 15V | ±20V | - | 1.47W (Ta), 22.73W (Tc) | 3.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
ON Semiconductor |
MOSFET P-CH 12V 3A CPH3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存7,184 |
|
MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.8V, 4.5V | 1.4V @ 1mA | 5.6nC @ 4.5V | 405pF @ 6V | ±10V | - | 1W (Ta) | 70 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
MOSFET N-CH 100V 65A LPTS
|
封装: SC-83 |
库存21,456 |
|
MOSFET (Metal Oxide) | 100V | 65A (Ta) | 4V, 10V | 2.5V @ 1mA | 260nC @ 10V | 10780pF @ 25V | ±20V | - | 100W (Tc) | 9.1 mOhm @ 32.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
||
Transphorm |
MOSFET N-CH GANFET 650V 16A PQFN
|
封装: 4-PowerDFN |
库存7,520 |
|
GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | ±18V | - | 81W (Tc) | 180 mOhm @ 10A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 4-PowerDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 68A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存38,412 |
|
MOSFET (Metal Oxide) | 100V | 68A (Tc) | 10V | 4V @ 1mA | 59nC @ 10V | 3195pF @ 50V | ±20V | - | 170W (Tc) | 13.9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB
|
封装: TO-220-3 |
库存5,312 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 500V 53A ISOTOP
|
封装: ISOTOP |
库存5,248 |
|
MOSFET (Metal Oxide) | 500V | 53A | 10V | 4V @ 250µA | 434nC @ 10V | 11200pF @ 25V | ±30V | - | 460W (Tc) | 80 mOhm @ 27A, 10V | 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
||
Goford Semiconductor |
N100V,RD(MAX)130MOHM@10V,TO-252
|
封装: - |
库存14,382 |
|
MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4.5V, 10V | 3V @ 250µA | 90 nC @ 10 V | 690 pF @ 25 V | ±20V | - | 28W (Tc) | 130mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
T6 40V LL 2X2 WDFNW6
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 40 V | 11A (Ta), 37A (Tc) | 4.5V, 10V | 2V @ 20µA | 10.5 nC @ 10 V | 550 pF @ 25 V | ±20V | - | 2.4W (Ta), 28W (Tc) | 11mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 6-WDFNW (2.05x2.05) | 6-PowerWDFN |
||
Wolfspeed, Inc. |
21m, 1200V SiC FET, TO-263-7 XL
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 114A (Tc) | 15V | 3.8V @ 17.1mA | 169 nC @ 15 V | 5100 pF @ 1000 V | +19V, -8V | - | 500W (Tc) | 29mOhm @ 62.12A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
MOSFET_(20V 40V) PG-TSDSON-8
|
封装: - |
库存14,940 |
|
MOSFET (Metal Oxide) | 40 V | 89A (Tj) | 7V, 10V | 3.4V @ 21µA | 25 nC @ 10 V | 1737 pF @ 25 V | ±20V | - | 58W (Tc) | 3.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-33 | 8-PowerTDFN |
||
Micro Commercial Co |
MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
60V P-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存86,766 |
|
MOSFET (Metal Oxide) | 60 V | 4A (Ta), 15A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17 nC @ 10 V | 879 pF @ 30 V | ±20V | - | 2W (Ta), 25W (Tc) | 68mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 20V 1A X2-DFN1006-3
|
封装: - |
库存56,181 |
|
MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 1.3 nC @ 10 V | 56 pF @ 16 V | ±12V | - | 500mW (Ta) | 400mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 3.7A SC70-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.7A (Ta) | 2.5V, 10V | 1.5V @ 250µA | 16 nC @ 10 V | 340 pF @ 15 V | ±12V | - | 1.1W (Ta) | 51mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
||
Infineon Technologies |
MOSFET N-CH 150V 86A D2PAK
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
N-CHANNEL MOSFET,DFN5060
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 4V @ 250µA | 25.5 nC @ 10 V | 1534 pF @ 25 V | ±20V | - | 75W (Tj) | 5.6mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -4.40A, -3
|
封装: - |
库存17,823 |
|
MOSFET (Metal Oxide) | 30 V | 4.4A (Ta) | 2.5V, 10V | 1.4V @ 250µA | 16 nC @ 10 V | 800 pF @ 15 V | ±12V | - | 1.2W (Ta) | 55mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Micro Commercial Co |
N-CHANNEL MOSFET,TO-247AB
|
封装: - |
库存954 |
|
SiC (Silicon Carbide Junction Transistor) | 1700 V | 3A | 15V, 20V | 4.5V @ 1mA | 15.5 nC @ 20 V | 124 pF @ 1000 V | +25V, -5V | - | 69W | 1.32Ohm @ 1.5A, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
Toshiba Semiconductor and Storage |
SMOS LOW RON NCH VDSS:20V ID:0.8
|
封装: - |
库存26,475 |
|
MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | 2 nC @ 4.5 V | 177 pF @ 10 V | ±8V | - | 500mW (Ta) | 57mOhm @ 800mA, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Lead |
||
Infineon Technologies |
MOSFET N-CH 20V 25A/100A TDSON
|
封装: - |
库存7,446 |
|
MOSFET (Metal Oxide) | 20 V | 25A (Ta), 100A (Tc) | 2.5V, 4.5V | 1.2V @ 200µA | 52.7 nC @ 4.5 V | 7800 pF @ 10 V | ±12V | - | 2.8W (Ta), 78W (Tc) | 2.6mOhm @ 50A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 30V 500MA PPAK 0806
|
封装: - |
库存35,280 |
|
MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 0.6 nC @ 4.5 V | 17 pF @ 15 V | ±8V | - | 1.25W (Ta) | 1.46Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 |
||
STMicroelectronics |
MOSFET N-CH 950V 18A TO247
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 950 V | 18A (Tc) | 10V | 5V @ 100µA | 50.7 nC @ 10 V | 1600 pF @ 100 V | ±30V | - | 250W (Tc) | 330mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
OPTIMOSTM5LINEARFET100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 10A (Ta), 63A (Tc) | 10V | 3.9V @ 36µA | 29 nC @ 10 V | 2300 pF @ 50 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 11.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 FL | 8-PowerTDFN |