图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,416 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2430pF @ 25V | ±20V | - | 110W (Tc) | 16 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 150V 83A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存8,436 |
|
MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 4460pF @ 25V | ±30V | - | 350W (Tc) | 15 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 38A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,408 |
|
MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 3.8W (Ta), 68W (Tc) | 26 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET P-CH 30V 1.9A SC70-6
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存42,552 |
|
MOSFET (Metal Oxide) | 30V | 1.9A (Ta) | 4.5V, 10V | 3V @ 100µA | 5nC @ 4.5V | - | ±20V | - | 950mW (Ta) | 150 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 7.3A TO-220
|
封装: TO-220-3 |
库存103,464 |
|
MOSFET (Metal Oxide) | 100V | 7.3A (Tc) | 5V, 10V | 2V @ 250µA | 6nC @ 5V | 290pF @ 25V | ±20V | - | 40W (Tc) | 350 mOhm @ 3.65A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 500V 4.3A TO251
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存5,904 |
|
MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | ±20V | - | 53W (Tc) | 950 mOhm @ 1.2A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-323
|
封装: - |
库存3,296 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存62,388 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | - | 2.5W (Ta), 42W (Tc) | 100 mOhm @ 8.4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 60V 26A SO8FL
|
封装: 8-PowerTDFN |
库存7,392 |
|
MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 850pF @ 25V | ±20V | - | 3.6W (Ta), 39W (Tc) | 24 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 5.4A 4WLCSP
|
封装: 4-XFBGA, WLCSP |
库存7,312 |
|
MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | - | 6.2nC @ 4.5V | - | - | - | 400mW | - | 150°C (TJ) | Surface Mount | 4-WLCSP (2x2) | 4-XFBGA, WLCSP |
||
Vishay Siliconix |
MOSFET N-CH 200V 34.4A SO8
|
封装: PowerPAK? SO-8 |
库存7,280 |
|
MOSFET (Metal Oxide) | 200V | 34.4A (Tc) | 7.5V, 10V | 4V @ 250µA | 37nC @ 7.5V | 1935pF @ 100V | ±20V | - | 104W (Tc) | 35 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 650V 13A TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,440 |
|
MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | ±20V | - | 72W (Tc) | 190 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 30V 2.5A CPH3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存25,188 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | ±20V | - | 1W (Ta) | 156 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT223
|
封装: TO-261-4, TO-261AA |
库存27,276 |
|
MOSFET (Metal Oxide) | 60V | 2.9A (Tj) | 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | ±20V | - | 1.8W (Ta) | 120 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
STMicroelectronics |
MOSFET N-CH 525V 5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存26,724 |
|
MOSFET (Metal Oxide) | 525V | 5A (Tc) | 10V | 4.5V @ 100µA | - | - | ±30V | - | 70W (Tc) | 1.2 Ohm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
|
封装: SC-100, SOT-669 |
库存24,612 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 103.5nC @ 10V | 6645pF @ 15V | ±20V | - | 272W (Tc) | 1.15 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
onsemi |
T8 80V LL SO8FL
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 20A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 140µA | 52 nC @ 10 V | 2900 pF @ 40 V | ±20V | - | 3.8W (Ta), 116W (Tc) | 4mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Infineon Technologies |
MOSFET_(120V 300V)
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 4V @ 240µA | 185 nC @ 10 V | 11570 pF @ 25 V | ±20V | - | 300W (Tc) | 5.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
onsemi |
MOSFET N-CH 200V 9A D2PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 4V @ 250µA | 29 nC @ 10 V | 720 pF @ 25 V | ±30V | - | 3.13W (Ta), 72W (Tc) | 400mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 60 V (D-S)
|
封装: - |
库存9,915 |
|
MOSFET (Metal Oxide) | 60 V | 278A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 84 nC @ 10 V | 5485 pF @ 25 V | ±20V | - | 500W (Tc) | 3mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Renesas Electronics Corporation |
SMALL SIGNAL MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 60V 80A TO220-3
|
封装: - |
库存20,277 |
|
MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 4V @ 5.5mA | 173 nC @ 10 V | 5033 pF @ 25 V | ±20V | - | 340W (Tc) | 23mOhm @ 64A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
STMicroelectronics |
N-CHANNEL 100 V STRIPFET F7 POWE
|
封装: - |
库存957 |
|
MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 4.5V @ 250µA | 127 nC @ 10 V | 9000 pF @ 50 V | ±20V | - | 250W (Tc) | 4.2mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 50A TO220AB
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 72 nC @ 10 V | 3065 pF @ 25 V | ±20V | - | 136W (Tc) | 9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
MOSFET N-CH 650V 30A SMD
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
T8 60V LOW COSS
|
封装: - |
库存4,470 |
|
MOSFET (Metal Oxide) | 60 V | 13A (Ta), 48A (Tc) | 4.5V, 10V | 2V @ 40µA | 13.7 nC @ 10 V | 880 pF @ 30 V | ±20V | - | 3.6W (Tc), 52W (Tc) | 10mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Panjit International Inc. |
60V P-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 5A (Ta), 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22 nC @ 10 V | 1256 pF @ 30 V | ±20V | - | 2W (Ta), 20W (Tc) | 48mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
||
Infineon Technologies |
SICFET N-CH 1.2KV 36A TO263
|
封装: - |
库存5,841 |
|
SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | - | 5.7V @ 5.6mA | 34 nC @ 18 V | 1145 pF @ 800 V | +18V, -15V | - | 181W (Tc) | 83mOhm @ 13A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存8,718 |
|
MOSFET (Metal Oxide) | 60 V | 6.5A (Ta), 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28 nC @ 10 V | 1680 pF @ 20 V | ±20V | - | 2.4W (Ta), 100W (Tc) | 21mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |