图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 31A DIRECTFET
|
封装: DirectFET? Isometric MT |
库存217,560 |
|
MOSFET (Metal Oxide) | 20V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 69nC @ 4.5V | 6290pF @ 10V | ±20V | - | 1.8W (Ta), 89W (Tc) | 2 mOhm @ 31A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MT | DirectFET? Isometric MT |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 23A TO263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,840 |
|
MOSFET (Metal Oxide) | 60V | 7A (Ta), 23A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20nC @ 10V | 950pF @ 30V | ±20V | - | 2.1W (Ta), 41.5W (Tc) | 19 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 47A TO-220
|
封装: TO-220-3 |
库存6,480 |
|
MOSFET (Metal Oxide) | 60V | 47A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | ±25V | - | 160W (Tc) | 26 mOhm @ 23.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 9.5A TO-220F
|
封装: TO-220-3 Full Pack |
库存7,504 |
|
MOSFET (Metal Oxide) | 400V | 9.5A (Tc) | 10V | 5V @ 250µA | 60nC @ 10V | 2300pF @ 25V | ±30V | - | 56W (Tc) | 270 mOhm @ 4.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 13.5A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存64,044 |
|
MOSFET (Metal Oxide) | 30V | 13.5A (Ta) | 4.5V, 10V | 2V @ 1mA | 35nC @ 5V | 2800pF @ 15V | ±16V | - | 2.5W (Ta) | 7.5 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 650V 6.6A TO220-FP
|
封装: TO-220-3 Full Pack |
库存6,368 |
|
MOSFET (Metal Oxide) | 650V | 6.6A (Tc) | 10V | 5V @ 300µA | 47nC @ 10V | 790pF @ 25V | ±20V | - | 32W (Tc) | 700 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Microsemi Corporation |
MOSFET N-CH 1200V 27A T-MAX
|
封装: TO-247-3 Variant |
库存5,376 |
|
MOSFET (Metal Oxide) | 1200V | 27A (Tc) | 10V | 5V @ 2.5mA | 300nC @ 10V | 9670pF @ 25V | ±30V | - | 1135W (Tc) | 650 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? | TO-247-3 Variant |
||
IXYS |
MOSFET N-CH 75V 120A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,792 |
|
MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 4740pF @ 25V | ±20V | - | 250W (Tc) | 7.7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 150V 50A SOT78
|
封装: TO-220-3 |
库存4,144 |
|
MOSFET (Metal Oxide) | 150V | 50A (Tc) | 10V | 4V @ 1mA | 79nC @ 10V | 4720pF @ 25V | ±20V | - | 250W (Tc) | 35 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 2.4A TO-220
|
封装: TO-220-3 |
库存3,600 |
|
MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 5.5V @ 25µA | 6.1nC @ 10V | 240pF @ 25V | ±30V | - | 55W (Tc) | 3.75 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET NCH 30V 22A POWERDI
|
封装: 8-PowerTDFN |
库存4,992 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta), 145A (Tc) | 4.5V, 10V | 3V @ 250µA | 43.7nC @ 10V | 2370pF @ 15V | +20V, -16V | - | 3.2W (Ta), 136W (Tc) | 3.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 600V 4A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,312 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | ±20V | Schottky Diode (Isolated) | 58W (Tc) | 980 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存59,592 |
|
MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | ±20V | - | 140W (Tc) | 5.5 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 8A
|
封装: TO-220-3 |
库存16,020 |
|
MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 4.5V @ 600µA | 29nC @ 10V | 1315pF @ 100V | ±20V | - | 136W (Tc) | 850 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 5A TO-220F
|
封装: TO-220-3 Full Pack |
库存6,272 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 5V @ 250µA | 16.6nC @ 10V | 940pF @ 25V | ±30V | - | 31.3W (Tc) | 1.5 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 650V 5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,456 |
|
MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 315pF @ 100V | ±25V | - | 60W (Tc) | 900 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 20V 8.8A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存790,476 |
|
MOSFET (Metal Oxide) | 20V | 8.8A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 70nC @ 4.5V | 3640pF @ 16V | ±12V | - | 1.6W (Ta) | 14 mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 8V MICROFOOT
|
封装: 4-UFBGA |
库存5,600 |
|
MOSFET (Metal Oxide) | 8V | - | 1.2V, 4.5V | 800mV @ 250µA | 50nC @ 4.5V | - | ±5V | - | 1.1W (Ta), 2.7W (Tc) | 25 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-UFBGA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 44V 8DFN
|
封装: 8-PowerVDFN |
库存15,960 |
|
MOSFET (Metal Oxide) | 60V | 44A (Tc) | 10V | 2.3V @ 250µA | 65nC @ 10V | 2520pF @ 30V | ±20V | - | 56W (Tc) | 4.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TA) | Surface Mount | 8-DFN (5x6) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8
|
封装: 8-PowerTDFN |
库存47,490 |
|
MOSFET (Metal Oxide) | 30V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 26nC @ 10V | 1700pF @ 15V | ±20V | - | 2.1W (Ta), 48W (Tc) | 2.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET P-CH 30V SOT323
|
封装: SC-70, SOT-323 |
库存59,106 |
|
MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 2.5V, 4.5V | 1.1V @ 250µA | 0.72nC @ 4.5V | 46pF @ 15V | ±8V | - | 260mW (Ta), 830mW (Tc) | 4.1 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 500mA (Ta) | 10V | 4V @ 1mA | - | 220 pF @ 10 V | ±15V | - | 20W (Tc) | 25Ohm @ 300mA, 10V | 150°C | Surface Mount | DPAK-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Panjit International Inc. |
100V N-CHANNEL ENHANCEMENT MODE
|
封装: - |
库存7,095 |
|
MOSFET (Metal Oxide) | 100 V | 3.5A (Ta), 5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20 nC @ 10 V | 1413 pF @ 25 V | ±20V | - | 3.1W (Ta), 5.2W (Tc) | 115mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
onsemi |
MOSFET N-CH 30V 12.5A/18A 8MLP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 12.5A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 1mA | 23 nC @ 10 V | 1385 pF @ 15 V | ±20V | - | 2.3W (Ta), 27W (Tc) | 9.3mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
onsemi |
MOSFET N-CH 500V 2.6A IPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 2.6A (Tc) | 10V | 5V @ 250µA | 13 nC @ 10 V | 460 pF @ 25 V | ±30V | - | 2.5W (Ta), 45W (Tc) | 2.7Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 138.00A, 3
|
封装: - |
库存30,000 |
|
MOSFET (Metal Oxide) | 30 V | 138A (Tc) | 10V | 2.3V @ 250µA | 51 nC @ 10 V | 3406 pF @ 15 V | ±20V | - | 83W (Tc) | 1.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PPAK (5.1x5.86) | 8-PowerTDFN |
||
Nexperia USA Inc. |
Nexperia BSS138BKW-B - Small Sig
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 320mA (Ta) | 2.5V, 10V | 1.6V @ 250µA | 0.7 nC @ 4.5 V | 56 pF @ 10 V | ±20V | - | 260mW (Ta), 830mW (Tc) | 1.6Ohm @ 320mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Comchip Technology |
MOSFET P-CH 20V 3A SOT23-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 12 nC @ 2.5 V | 405 pF @ 10 V | ±12V | - | 1W (Ta) | 110mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Goford Semiconductor |
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
|
封装: - |
库存13,026 |
|
MOSFET (Metal Oxide) | 40 V | 12A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 10 V | 930 pF @ 20 V | ±20V | - | 50W (Tc) | 35mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
SIC DISCRETE
|
封装: - |
库存231 |
|
SiCFET (Silicon Carbide) | 1200 V | 225A (Tc) | 15V, 18V | 5.2V @ 47mA | 220 nC @ 18 V | 9170 nF @ 25 V | +20V, -5V | - | 750W (Tc) | 9.9mOhm @ 108A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-8 | TO-247-4 |