页 253 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品

IPD250N06N3GBTMA1

Infineon Technologies

MOSFET N-CH 60V 28A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 28A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,480

MOSFET (Metal Oxide)

60V

28A (Tc)

10V

4V @ 11µA

15nC @ 10V

1200pF @ 30V

±20V

-

36W (Tc)

25 mOhm @ 28A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

BSP322PL6327HTSA1

Infineon Technologies

MOSFET P-CH 100V 1A SOT-223

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 380µA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800 mOhm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存3,920

MOSFET (Metal Oxide)

100V

1A (Tc)

4.5V, 10V

1V @ 380µA

16.5nC @ 10V

372pF @ 25V

±20V

-

1.8W (Ta)

800 mOhm @ 1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

PSMN023-40YLCX

NXP

MOSFET N-CH 40V 24A LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

封装: SC-100, SOT-669

库存6,848

MOSFET (Metal Oxide)

40V

24A (Tc)

4.5V, 10V

1.95V @ 1mA

8.4nC @ 10V

520pF @ 20V

±20V

-

25W (Tc)

23 mOhm @ 5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK56, Power-SO8

SC-100, SOT-669

NTMS4872NR2G

ON Semiconductor

MOSFET N-CH 30V 6A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 10.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 820mW (Ta)
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存570,708

MOSFET (Metal Oxide)

30V

6A (Ta), 10.2A (Tc)

4.5V, 10V

2.5V @ 250µA

15nC @ 4.5V

1700pF @ 15V

±20V

-

820mW (Ta)

13.5 mOhm @ 10.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

FDA2712

Fairchild/ON Semiconductor

MOSFET N-CH 250V 64A TO-3PN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10175pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

库存169,248

MOSFET (Metal Oxide)

250V

64A (Tc)

10V

5V @ 250µA

129nC @ 10V

10175pF @ 25V

±30V

-

357W (Tc)

34 mOhm @ 40A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PN

TO-3P-3, SC-65-3

PHP21N06LT,127

NXP

MOSFET N-CH 55V 19A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存5,456

MOSFET (Metal Oxide)

55V

19A (Tc)

5V, 10V

2V @ 1mA

9.4nC @ 5V

650pF @ 25V

±15V

-

56W (Tc)

70 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

NTMFS08N2D5C

Fairchild/ON Semiconductor

PTNG 80V/20V N-CHANNEL MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,200

-

STL16N60M6

STMicroelectronics

NCHANNEL 600V M6 POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存6,656

-

IXTP20N65XM

IXYS

MOSFET N-CH 650V 9A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 210 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存6,024

MOSFET (Metal Oxide)

650V

9A (Tc)

10V

5.5V @ 250µA

35nC @ 10V

1390pF @ 25V

±30V

-

63W (Tc)

210 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

FCPF290N80

Fairchild/ON Semiconductor

MOSFET N-CH 800V 17A TO220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3205pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存17,652

MOSFET (Metal Oxide)

800V

17A (Tc)

10V

4.5V @ 1.7mA

75nC @ 10V

3205pF @ 100V

±20V

-

40W (Tc)

290 mOhm @ 8.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

2SK302500L

Panasonic Electronic Components

MOSFET N-CH 60V 30A UG-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DL
Package / Case: U-G2

封装: U-G2

库存36,000

MOSFET (Metal Oxide)

60V

30A (Tc)

4V, 10V

2.5V @ 1mA

-

1200pF @ 10V

±20V

-

1W (Ta), 25W (Tc)

40 mOhm @ 15A, 10V

150°C (TJ)

Surface Mount

U-DL

U-G2

SQ7414AEN-T1_GE3

Vishay Siliconix

MOSFET N-CH 60V 5.6A PPAK 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.7A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

库存7,232

MOSFET (Metal Oxide)

60V

16A (Tc)

4.5V, 10V

2.5V @ 250µA

24nC @ 10V

980pF @ 30V

±20V

-

62W (Tc)

26 mOhm @ 5.7A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? 1212-8

DMG3415UFY4Q-7

Diodes Incorporated

MOSFET P-CH 16V 2.5A X2-DFN2015

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 650mW (Ta)
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN2015-3
Package / Case: 3-XFDFN

封装: 3-XFDFN

库存7,024

MOSFET (Metal Oxide)

16V

2.5A (Ta)

1.8V, 4.5V

1V @ 250µA

10nC @ 4.5V

282pF @ 10V

±8V

-

650mW (Ta)

39 mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

X2-DFN2015-3

3-XFDFN

IRF640NSTRLPBF

Infineon Technologies

MOSFET N-CH 200V 18A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存550,140

MOSFET (Metal Oxide)

200V

18A (Tc)

10V

4V @ 250µA

67nC @ 10V

1160pF @ 25V

±20V

-

150W (Tc)

150 mOhm @ 11A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SSM6K202FE,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.3A ES6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ES6 (1.6x1.6)
Package / Case: SOT-563, SOT-666

封装: SOT-563, SOT-666

库存115,236

MOSFET (Metal Oxide)

30V

2.3A (Ta)

1.8V, 4V

1V @ 1mA

-

270pF @ 10V

±12V

-

500mW (Ta)

85 mOhm @ 1.5A, 4V

150°C (TJ)

Surface Mount

ES6 (1.6x1.6)

SOT-563, SOT-666

SSFU6511

Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 11.5A, 650

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 32.6W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: -

库存2,955

MOSFET (Metal Oxide)

650 V

11.5A (Tc)

10V

4V @ 250µA

19 nC @ 10 V

870 pF @ 50 V

±30V

-

32.6W (Tc)

360mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

TK099V65Z-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (8x8)
Package / Case: 4-VSFN Exposed Pad

封装: -

库存44,424

MOSFET (Metal Oxide)

650 V

30A (Ta)

10V

4V @ 1.27mA

47 nC @ 10 V

2780 pF @ 300 V

±30V

-

230W (Tc)

99mOhm @ 15A, 10V

150°C

Surface Mount

5-DFN (8x8)

4-VSFN Exposed Pad

DMTH6005LFG-7

Diodes Incorporated

MOSFET N-CH 60V 19.7A/100A PWRDI

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: POWERDI3333-8
Package / Case: 8-PowerVDFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

19.7A (Ta), 100A (Tc)

4.5V, 10V

2.5V @ 250µA

48.7 nC @ 10 V

3150 pF @ 30 V

±20V

-

2.38W (Ta), 75W (Tc)

4.1mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

POWERDI3333-8

8-PowerVDFN

IRFH5007TR2PBF

Infineon Technologies

MOSFET N-CH 75V 17A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

75 V

17A (Ta), 100A (Tc)

-

4V @ 150µA

98 nC @ 10 V

4290 pF @ 25 V

-

5.9mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

PJD9P06A-AU_L2_000A1

Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存7,218

MOSFET (Metal Oxide)

60 V

2.5A (Ta), 7A (Tc)

4.5V, 10V

2.5V @ 250µA

8.3 nC @ 10 V

430 pF @ 30 V

±20V

-

2W (Ta), 15.6W (Tc)

170mOhm @ 3.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

2N7002K-EVL

Venkel

MOSFET Single,SOT-23,60V,300mA,N

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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MOSFET (Metal Oxide)

60 V

300mA (Ta)

4.5V, 10V

2.5V @ 250µA

0.8 nC @ 5 V

35 pF @ 25 V

±20V

-

350mW (Ta)

3Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

FDWS86068-F085

onsemi

MOSFET N-CH 100V 80A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5.1x6.3)
Package / Case: 8-PowerTDFN

封装: -

库存9,966

MOSFET (Metal Oxide)

100 V

80A (Tc)

10V

4V @ 250µA

43 nC @ 10 V

2220 pF @ 50 V

±20V

-

214W (Ta)

6.4mOhm @ 80A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5.1x6.3)

8-PowerTDFN

IXFV110N25TS

IXYS

MOSFET N-CH 110A PLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXFT21N50

IXYS

MOSFET N-CH 21A TO268

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

SI2392BDS-T1-GE3

Vishay Siliconix

N-CHANNEL 100-V (D-S) MOSFET SOT

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

库存31,983

MOSFET (Metal Oxide)

100 V

2A (Ta), 2.3A (Tc)

4.5V, 10V

3V @ 250µA

7.1 nC @ 10 V

290 pF @ 50 V

±20V

-

1.25W (Ta), 1.7W (Tc)

52mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

G080P06T

Goford Semiconductor

MOSFET P-CH 60V 195A TO-220

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

-

195A (Tc)

10V

4V @ 250µA

-

±20V

-

294W (Tc)

7.5mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

DMT67M8LSS-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SO-8 T&R 2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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MOSFET (Metal Oxide)

60 V

12A (Ta)

4.5V, 10V

3V @ 250µA

37.5 nC @ 10 V

2130 pF @ 30 V

±20V

-

1.4W (Ta)

6.6mOhm @ 16.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

RJK2557DPA-WS-J0

Renesas Electronics Corporation

MOSFET N-CH 250V 17A 8WPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 8.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK (3)
Package / Case: 8-PowerWDFN

封装: -

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MOSFET (Metal Oxide)

250 V

17A (Ta)

10V

4.5V @ 1mA

20 nC @ 10 V

1250 pF @ 25 V

±30V

-

30W (Tc)

128mOhm @ 8.5A, 10V

150°C

Surface Mount

8-WPAK (3)

8-PowerWDFN

UPA2713GR-E1-A

Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

SI4467DY

Fairchild Semiconductor

P-CHANNEL POWER MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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MOSFET (Metal Oxide)

20 V

13.5A (Ta)

1.8V, 4.5V

1.5V @ 250µA

120 nC @ 4.5 V

8237 pF @ 10 V

±8V

-

1.2W (Ta)

8.5mOhm @ 13.5A, 4.5V

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD250N06N3GBTMA1	Infineon Technologies	MOSFET N-CH 60V 28A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,480	MOSFET (Metal Oxide)	60V	28A (Tc)	10V	4V @ 11µA	15nC @ 10V	1200pF @ 30V	±20V	-	36W (Tc)	25 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSP322PL6327HTSA1	Infineon Technologies	MOSFET P-CH 100V 1A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 380µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存3,920	MOSFET (Metal Oxide)	100V	1A (Tc)	4.5V, 10V	1V @ 380µA	16.5nC @ 10V	372pF @ 25V	±20V	-	1.8W (Ta)	800 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
PSMN023-40YLCX	NXP	MOSFET N-CH 40V 24A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	封装: SC-100, SOT-669	库存6,848	MOSFET (Metal Oxide)	40V	24A (Tc)	4.5V, 10V	1.95V @ 1mA	8.4nC @ 10V	520pF @ 20V	±20V	-	25W (Tc)	23 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
NTMS4872NR2G	ON Semiconductor	MOSFET N-CH 30V 6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 10.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 820mW (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存570,708	MOSFET (Metal Oxide)	30V	6A (Ta), 10.2A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	1700pF @ 15V	±20V	-	820mW (Ta)	13.5 mOhm @ 10.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDA2712	Fairchild/ON Semiconductor	MOSFET N-CH 250V 64A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10175pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	封装: TO-3P-3, SC-65-3	库存169,248	MOSFET (Metal Oxide)	250V	64A (Tc)	10V	5V @ 250µA	129nC @ 10V	10175pF @ 25V	±30V	-	357W (Tc)	34 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
PHP21N06LT,127	NXP	MOSFET N-CH 55V 19A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存5,456	MOSFET (Metal Oxide)	55V	19A (Tc)	5V, 10V	2V @ 1mA	9.4nC @ 5V	650pF @ 25V	±15V	-	56W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMFS08N2D5C	Fairchild/ON Semiconductor	PTNG 80V/20V N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STL16N60M6	STMicroelectronics	NCHANNEL 600V M6 POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存6,656	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTP20N65XM	IXYS	MOSFET N-CH 650V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: TO-220-3	库存6,024	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	5.5V @ 250µA	35nC @ 10V	1390pF @ 25V	±30V	-	63W (Tc)	210 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCPF290N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 17A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3205pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存17,652	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	4.5V @ 1.7mA	75nC @ 10V	3205pF @ 100V	±20V	-	40W (Tc)	290 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
2SK302500L	Panasonic Electronic Components	MOSFET N-CH 60V 30A UG-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DL Package / Case: U-G2	封装: U-G2	库存36,000	MOSFET (Metal Oxide)	60V	30A (Tc)	4V, 10V	2.5V @ 1mA	-	1200pF @ 10V	±20V	-	1W (Ta), 25W (Tc)	40 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	U-DL	U-G2
SQ7414AEN-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 5.6A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	封装: PowerPAK? 1212-8	库存7,232	MOSFET (Metal Oxide)	60V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	24nC @ 10V	980pF @ 30V	±20V	-	62W (Tc)	26 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
DMG3415UFY4Q-7	Diodes Incorporated	MOSFET P-CH 16V 2.5A X2-DFN2015 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN2015-3 Package / Case: 3-XFDFN	封装: 3-XFDFN	库存7,024	MOSFET (Metal Oxide)	16V	2.5A (Ta)	1.8V, 4.5V	1V @ 250µA	10nC @ 4.5V	282pF @ 10V	±8V	-	650mW (Ta)	39 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN2015-3	3-XFDFN
IRF640NSTRLPBF	Infineon Technologies	MOSFET N-CH 200V 18A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存550,140	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	67nC @ 10V	1160pF @ 25V	±20V	-	150W (Tc)	150 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM6K202FE,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 2.3A ES6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 (1.6x1.6) Package / Case: SOT-563, SOT-666	封装: SOT-563, SOT-666	库存115,236	MOSFET (Metal Oxide)	30V	2.3A (Ta)	1.8V, 4V	1V @ 1mA	-	270pF @ 10V	±12V	-	500mW (Ta)	85 mOhm @ 1.5A, 4V	150°C (TJ)	Surface Mount	ES6 (1.6x1.6)	SOT-563, SOT-666
SSFU6511	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 11.5A, 650 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32.6W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	封装: -	库存2,955	MOSFET (Metal Oxide)	650 V	11.5A (Tc)	10V	4V @ 250µA	19 nC @ 10 V	870 pF @ 50 V	±30V	-	32.6W (Tc)	360mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
TK099V65Z-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 30A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.27mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 5-DFN (8x8) Package / Case: 4-VSFN Exposed Pad	封装: -	库存44,424	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	4V @ 1.27mA	47 nC @ 10 V	2780 pF @ 300 V	±30V	-	230W (Tc)	99mOhm @ 15A, 10V	150°C	Surface Mount	5-DFN (8x8)	4-VSFN Exposed Pad
DMTH6005LFG-7	Diodes Incorporated	MOSFET N-CH 60V 19.7A/100A PWRDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.38W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	19.7A (Ta), 100A (Tc)	4.5V, 10V	2.5V @ 250µA	48.7 nC @ 10 V	3150 pF @ 30 V	±20V	-	2.38W (Ta), 75W (Tc)	4.1mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
IRFH5007TR2PBF	Infineon Technologies	MOSFET N-CH 75V 17A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	75 V	17A (Ta), 100A (Tc)	-	4V @ 150µA	98 nC @ 10 V	4290 pF @ 25 V	-	-	-	5.9mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
PJD9P06A-AU_L2_000A1	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存7,218	MOSFET (Metal Oxide)	60 V	2.5A (Ta), 7A (Tc)	4.5V, 10V	2.5V @ 250µA	8.3 nC @ 10 V	430 pF @ 30 V	±20V	-	2W (Ta), 15.6W (Tc)	170mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
2N7002K-EVL	Venkel	MOSFET Single,SOT-23,60V,300mA,N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.8 nC @ 5 V	35 pF @ 25 V	±20V	-	350mW (Ta)	3Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDWS86068-F085	onsemi	MOSFET N-CH 100V 80A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Ta) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5.1x6.3) Package / Case: 8-PowerTDFN	封装: -	库存9,966	MOSFET (Metal Oxide)	100 V	80A (Tc)	10V	4V @ 250µA	43 nC @ 10 V	2220 pF @ 50 V	±20V	-	214W (Ta)	6.4mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5.1x6.3)	8-PowerTDFN
IXFV110N25TS	IXYS	MOSFET N-CH 110A PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT21N50	IXYS	MOSFET N-CH 21A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI2392BDS-T1-GE3	Vishay Siliconix	N-CHANNEL 100-V (D-S) MOSFET SOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	封装: -	库存31,983	MOSFET (Metal Oxide)	100 V	2A (Ta), 2.3A (Tc)	4.5V, 10V	3V @ 250µA	7.1 nC @ 10 V	290 pF @ 50 V	±20V	-	1.25W (Ta), 1.7W (Tc)	52mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
G080P06T	Goford Semiconductor	MOSFET P-CH 60V 195A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	-	195A (Tc)	10V	4V @ 250µA	-	-	±20V	-	294W (Tc)	7.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
DMT67M8LSS-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SO-8 T&R 2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	12A (Ta)	4.5V, 10V	3V @ 250µA	37.5 nC @ 10 V	2130 pF @ 30 V	±20V	-	1.4W (Ta)	6.6mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RJK2557DPA-WS-J0	Renesas Electronics Corporation	MOSFET N-CH 250V 17A 8WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 128mOhm @ 8.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-WPAK (3) Package / Case: 8-PowerWDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	250 V	17A (Ta)	10V	4.5V @ 1mA	20 nC @ 10 V	1250 pF @ 25 V	±30V	-	30W (Tc)	128mOhm @ 8.5A, 10V	150°C	Surface Mount	8-WPAK (3)	8-PowerWDFN
UPA2713GR-E1-A	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI4467DY	Fairchild Semiconductor	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote	MOSFET (Metal Oxide)	20 V	13.5A (Ta)	1.8V, 4.5V	1.5V @ 250µA	120 nC @ 4.5 V	8237 pF @ 10 V	±8V	-	1.2W (Ta)	8.5mOhm @ 13.5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)