图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 100A TO-220
|
封装: TO-220-3 |
库存8,952 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | ±20V | - | 214W (Tc) | 6.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 59A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,856 |
|
MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | - | 57W (Tc) | 9.5 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
NXP |
MOSFET N-CH 20V 6A 6TSOP
|
封装: SC-74, SOT-457 |
库存4,240 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 10nC @ 4.5V | 470pF @ 10V | ±8V | - | 530mW (Ta), 6.25W (Tc) | 27 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 25V 37A DFN3.3X3.3
|
封装: 8-PowerWDFN |
库存25,008 |
|
MOSFET (Metal Oxide) | 25V | 37A (Ta), 50A (Tc) | 4.5V, 10V | 1.8V @ 250µA | 52nC @ 10V | 3554pF @ 12.5V | ±12V | - | 6.2W (Ta), 83W (Tc) | 3 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 3.2A SGL SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存4,096 |
|
MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 1.4V @ 250µA | 4.76nC @ 4.5V | 432pF @ 15V | ±12V | - | 480mW (Ta) | 55 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 85A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,912 |
|
MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 700mV @ 250µA | 78nC @ 4.5V | 3300pF @ 15V | ±10V | - | 110W (Tc) | 8 mOhm @ 51A, 7V | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 525V 4.4A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,192 |
|
MOSFET (Metal Oxide) | 525V | 4.4A (Tc) | 10V | 4.5V @ 50µA | 16.9nC @ 10V | 529pF @ 25V | ±30V | - | 70W (Tc) | 1.5 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 600V TO247-4
|
封装: TO-247-4 |
库存6,432 |
|
MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 4.5V @ 1.21mA | 70nC @ 10V | 3330pF @ 100V | ±20V | - | 278W (Tc) | 99 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
||
IXYS |
MOSFET N-CH 150V 102A TO-247
|
封装: TO-247-3 |
库存7,184 |
|
MOSFET (Metal Oxide) | 150V | 102A (Tc) | 10V | 5V @ 1mA | 87nC @ 10V | 5220pF @ 25V | ±20V | - | 455W (Tc) | 18 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 40V 312A SO8FL
|
封装: 8-PowerTDFN |
库存5,744 |
|
MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 2V @ 250µA | 143nC @ 10V | 8862pF @ 25V | ±20V | - | 3.8W (Ta), 167W (Tc) | 0.9 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET P-CH 30V DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,696 |
|
MOSFET (Metal Oxide) | 60V | 80A (Ta) | 4.5V, 10V | 2.6V @ 1mA | 115nC @ 10V | 5400pF @ 20V | ±20V | - | 84W (Tc) | 13 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 30V 21A POWERFLAT56
|
封装: 8-PowerVDFN |
库存5,328 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3V @ 250µA | 12nC @ 4.5V | 1500pF @ 25V | ±22V | - | 72W (Tc) | 5.8 mOhm @ 10.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: 8-PowerTDFN |
库存2,368 |
|
MOSFET (Metal Oxide) | 30V | 108A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19nC @ 10V | 1194pF @ 15V | ±20V | - | 89W (Tc) | 4.5 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 100V 56.6A TO220
|
封装: TO-220-3 Full Pack |
库存22,704 |
|
MOSFET (Metal Oxide) | 100V | 56.6A (Tc) | 7.5V, 10V | 4V @ 250µA | 81nC @ 10V | 3300pF @ 50V | ±20V | - | 39W (Tc) | 6.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 1.7A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存44,088 |
|
MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | ±30V | - | 2.5W (Ta), 50W (Tc) | 7.2 Ohm @ 850mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Rohm Semiconductor |
MOSFET N-CH 600V 6A TO-220FM
|
封装: TO-220-2 Full Pack |
库存9,036 |
|
MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 4.5V @ 1mA | 15nC @ 10V | 520pF @ 25V | ±30V | - | 40W (Tc) | 1.2 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 60V 120A TO220AB
|
封装: TO-220-3 |
库存14,772 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 126nC @ 10V | 11113pF @ 30V | ±20V | - | 375W (Tc) | 2.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.25A VESM
|
封装: SOT-723 |
库存342,000 |
|
MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.5V, 4.5V | 1V @ 1mA | - | 12pF @ 10V | ±10V | - | 150mW (Ta) | 2.2 Ohm @ 100mA, 4.5V | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas |
UPA1727G-E1-AT - MOS FIELD EFFEC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 10A (Ta) | 4V, 10V | 2.5V @ 1mA | 45 nC @ 10 V | 2400 pF @ 10 V | ±20V | - | 2W (Ta) | 19mOhm @ 5A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
PCH 4V DRIVE SERIES
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
SCHOTTKY DIODES
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 3.5V @ 10mA | 120 nC @ 20 V | 2225 pF @ 1000 V | +25V, -10V | - | 390W | 52mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 600V 20A HDSOP-10
|
封装: - |
库存5,061 |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 4V @ 320µA | 27 nC @ 10 V | 1080 pF @ 400 V | ±20V | - | 120W (Tc) | 125mOhm @ 6.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
||
IXYS |
MOSFET 54A 650V X3 TO268HV
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 200V 90A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 4.5V @ 1.5mA | 78 nC @ 10 V | 5420 pF @ 25 V | ±20V | - | 390W (Tc) | 12.8mOhm @ 45A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
N-CHANNEL 100-V (D-S) MOSFET
|
封装: - |
库存64,197 |
|
MOSFET (Metal Oxide) | 100 V | 21.8A (Ta), 95A (Tc) | 4.5V, 10V | 3V @ 250µA | 80 nC @ 10 V | 2866 pF @ 50 V | ±20V | - | 6.25W (Ta), 125W (Tc) | 6.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
||
onsemi |
MOSFET N-CH 40V 13A/37A 5DFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 13A (Ta), 37A (Tc) | 4.5V, 10V | 2V @ 250µA | 7.3 nC @ 10 V | 570 pF @ 25 V | ±20V | - | 3.5W (Ta), 28W (Tc) | 10.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Infineon Technologies |
SIC_DISCRETE
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 104A (Tc) | 18V, 20V | 5.1V @ 15mA | 82 nC @ 20 V | 2667 pF @ 800 V | +23V, -5V | - | 468W (Tc) | 25mOhm @ 43A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |