页 250 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品

BSL211SPL6327HTSA1

Infineon Technologies

MOSFET P-CH 20V 4.7A TSOP-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存2,608

MOSFET (Metal Oxide)

20V

4.7A (Ta)

2.5V, 4.5V

1.2V @ 25µA

12.4nC @ 4.5V

654pF @ 15V

±12V

-

2W (Ta)

67 mOhm @ 4.7A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

PHM10030DLSX

Nexperia USA Inc.

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存4,432

-

SI4876DY-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 14A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存561,900

MOSFET (Metal Oxide)

20V

14A (Ta)

2.5V, 4.5V

600mV @ 250µA (Min)

80nC @ 4.5V

-

±12V

-

1.6W (Ta)

5 mOhm @ 21A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IXFC12N80P

IXYS

MOSFET N-CH 800V 7A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 930 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

封装: ISOPLUS220?

库存3,376

MOSFET (Metal Oxide)

800V

7A (Tc)

10V

5.5V @ 2.5mA

51nC @ 10V

2800pF @ 25V

±30V

-

120W (Tc)

930 mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

NTB25P06G

ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 120W (Tj)
Rds On (Max) @ Id, Vgs: 82 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,536

MOSFET (Metal Oxide)

60V

27.5A (Ta)

10V

4V @ 250µA

50nC @ 10V

1680pF @ 25V

±15V

-

120W (Tj)

82 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MTP20N15E

ON Semiconductor

MOSFET N-CH 150V 20A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1627pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 112W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存89,580

MOSFET (Metal Oxide)

150V

20A (Tc)

10V

4V @ 250µA

55.9nC @ 10V

1627pF @ 25V

±20V

-

112W (Tc)

130 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

ZVN4306AVSTZ

Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3

封装: E-Line-3

库存7,440

MOSFET (Metal Oxide)

60V

1.1A (Ta)

5V, 10V

3V @ 1mA

-

350pF @ 25V

±20V

-

850mW (Ta)

330 mOhm @ 3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

E-Line (TO-92 compatible)

E-Line-3

IRF540

STMicroelectronics

MOSFET N-CH 100V 22A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 77 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存4,448

MOSFET (Metal Oxide)

100V

22A (Tc)

10V

4V @ 250µA

41nC @ 10V

870pF @ 25V

±20V

-

85W (Tc)

77 mOhm @ 11A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IXTT75N20L2

IXYS

MOSFET N-CH 200V 75A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,648

-

IXFQ21N50Q

IXYS

MOSFET N-CH 500V 21A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

库存5,696

MOSFET (Metal Oxide)

500V

21A (Tc)

-

Through Hole

TO-3P

TO-3P-3, SC-65-3

AOL1482

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 4.5A 8ULTRASO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.9W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 37 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UltraSO-8?
Package / Case: 3-PowerSMD, Flat Leads

封装: 3-PowerSMD, Flat Leads

库存988,800

MOSFET (Metal Oxide)

100V

4.5A (Ta), 28A (Tc)

4.5V, 10V

2.7V @ 250µA

44nC @ 10V

2000pF @ 50V

±20V

-

1.9W (Ta), 75W (Tc)

37 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

UltraSO-8?

3-PowerSMD, Flat Leads

STB25NM50N-1

STMicroelectronics

MOSFET N-CH 500V 22A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存2,000

MOSFET (Metal Oxide)

500V

22A (Tc)

10V

4V @ 250µA

84nC @ 10V

2565pF @ 25V

±25V

-

160W (Tc)

140 mOhm @ 11A, 10V

150°C (TJ)

Through Hole

I2PAK

TO-262-3 Long Leads, I2Pak, TO-262AA

FDN8601

Fairchild/ON Semiconductor

MOSFET N-CH 100V 2.7A 3SSOT

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 109 mOhm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SuperSOT-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存750,192

MOSFET (Metal Oxide)

100V

2.7A (Ta)

6V, 10V

4V @ 250µA

5nC @ 10V

210pF @ 50V

±20V

-

1.5W (Ta)

109 mOhm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SuperSOT-3

TO-236-3, SC-59, SOT-23-3

AO4314

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 36V 20A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 36V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 18V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4.2W (Ta)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存690,792

MOSFET (Metal Oxide)

36V

20A (Ta)

4.5V, 10V

2.3V @ 250µA

23nC @ 10V

1470pF @ 18V

±20V

-

4.2W (Ta)

6 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

IRFR120NTRLPBF

Infineon Technologies

MOSFET N-CH 100V 9.4A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存107,952

MOSFET (Metal Oxide)

100V

9.4A (Tc)

10V

4V @ 250µA

25nC @ 10V

330pF @ 25V

±20V

-

48W (Tc)

210 mOhm @ 5.6A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

DI9430T

Diodes Incorporated

MOSFET P-CH 20V 5.3A 8-SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SMD, Gull Wing

封装: 8-SMD, Gull Wing

库存24,600

MOSFET (Metal Oxide)

20V

5.3A (Ta)

4.5V, 10V

3V @ 25µA

38nC @ 10V

1430pF @ 10V

±20V

-

2.5W (Ta)

60 mOhm @ 5.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SMD, Gull Wing

IRF1104PBF

Infineon Technologies

MOSFET N-CH 40V 100A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存9,804

MOSFET (Metal Oxide)

40V

100A (Tc)

10V

4V @ 250µA

93nC @ 10V

2900pF @ 25V

±20V

-

170W (Tc)

9 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

FDD86102LZ

Fairchild/ON Semiconductor

MOSFET N-CH 100V 8A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存36,864

MOSFET (Metal Oxide)

100V

8A (Ta), 35A (Tc)

4.5V, 10V

3V @ 250µA

26nC @ 10V

1540pF @ 50V

±20V

-

3.1W (Ta), 54W (Tc)

22.5 mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252, (D-Pak)

TO-252-3, DPak (2 Leads + Tab), SC-63

BUK92150-55A,118

Nexperia USA Inc.

MOSFET N-CH 55V 11A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 338pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存146,184

MOSFET (Metal Oxide)

55V

11A (Tc)

4.5V, 10V

2V @ 1mA

6nC @ 5V

338pF @ 25V

±15V

-

36W (Tc)

125 mOhm @ 5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

IXTK60N50L2

IXYS

MOSFET N-CH 500V 60A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

封装: TO-264-3, TO-264AA

库存19,344

MOSFET (Metal Oxide)

500V

60A (Tc)

10V

4.5V @ 250µA

610nC @ 10V

24000pF @ 25V

±30V

-

960W (Tc)

100 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264 (IXTK)

TO-264-3, TO-264AA

DMN2075U-7

Diodes Incorporated

MOSFET N-CH 20V 4.2A SOT23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 594.3pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.6A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存34,260

MOSFET (Metal Oxide)

20V

4.2A (Ta)

2.5V, 4.5V

1V @ 250µA

7nC @ 4.5V

594.3pF @ 10V

±8V

-

800mW (Ta)

38 mOhm @ 3.6A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

SI3415BS-TP

Micro Commercial Co

Interface

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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MOSFET (Metal Oxide)

20 V

5.6A (Ta)

1.8V, 4.5V

900mV @ 250µA

12.7 nC @ 4.5 V

1180 pF @ 10 V

±10V

-

1.3W

42mOhm @ 5.6A, 4.5V

-55°C ~ 150°C

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

SQA403EJ-T1_GE3

Vishay Siliconix

MOSFET P-CH 30V 10A PPAK SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6
Package / Case: PowerPAK® SC-70-6

封装: -

库存46,518

MOSFET (Metal Oxide)

30 V

10A (Tc)

4.5V, 10V

2.5V @ 250µA

33 nC @ 10 V

1880 pF @ 10 V

±20V

-

13.6W (Tc)

20mOhm @ 5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SC-70-6

AON6354

Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 30V 83A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads

封装: -

库存14,208

MOSFET (Metal Oxide)

30 V

83A (Tc)

4.5V, 10V

2.2V @ 250µA

35 nC @ 10 V

1330 pF @ 15 V

±20V

-

36W (Tc)

3.3mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerSMD, Flat Leads

IRFR210BTM

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

200 V

2.7A (Tc)

10V

4V @ 250µA

9.3 nC @ 10 V

225 pF @ 25 V

±30V

-

2.5W (Ta), 26W (Tc)

1.5Ohm @ 1.35A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252 (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

NTD14N03RT4

onsemi

MOSFET N-CH 25V 14A DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

C3M0160120D

Wolfspeed, Inc.

SICFET N-CH 1200V 17A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
Vgs (Max): +15V, -4V
FET Feature: -
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: -

库存6,525

SiCFET (Silicon Carbide)

1200 V

17A (Tc)

15V

3.6V @ 2.33mA

38 nC @ 15 V

632 pF @ 1000 V

+15V, -4V

-

97W (Tc)

208mOhm @ 8.5A, 15V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

IQE013N04LM6ATMA1

Infineon Technologies

MOSFET N-CH 40V 31A/205A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-4
Package / Case: 8-PowerTDFN

封装: -

库存37,602

MOSFET (Metal Oxide)

40 V

31A (Ta), 205A (Tc)

-

2V @ 51µA

55 nC @ 10 V

3900 pF @ 20 V

±20V

-

2.5W (Ta), 107W (Tc)

1.35mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-4

8-PowerTDFN

NVMFS5C450NLAFT1G

onsemi

MOSFET N-CH 40V 110A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

封装: -

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MOSFET (Metal Oxide)

40 V

110A (Tc)

4.5V, 10V

2V @ 250µA

35 nC @ 10 V

2100 pF @ 20 V

±20V

-

68W (Tc)

2.8mOhm @ 40A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

RJK6026DPP-00-T2

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

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