图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 50A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存4,240 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 31nC @ 10V | 3200pF @ 15V | ±20V | - | 68W (Tc) | 5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,120 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 180µA | 110nC @ 10V | 4540pF @ 25V | ±20V | - | 250W (Tc) | 6.6 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 30V 63A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,264 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta), 63A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 13nC @ 4.5V | 1538pF @ 12V | ±20V | - | 1.4W (Ta), 54.6W (Tc) | 8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 60V 75A TO-220F
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存3,344 |
|
MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 4V @ 1mA | 103nC @ 10V | 5494pF @ 25V | ±20V | - | 55W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A 8TSON-ADV
|
封装: 8-PowerVDFN |
库存15,120 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 9.5nC @ 10V | 690pF @ 10V | ±20V | - | 700mW (Ta), 15W (Tc) | 25 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
IXYS |
MOSFET N-CH 800V 13A ISOPLUS220
|
封装: ISOPLUS220? |
库存6,336 |
|
MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 4.5V @ 4mA | 90nC @ 10V | 4300pF @ 25V | ±20V | - | 230W (Tc) | 650 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
NXP |
MOSFET N-CH 25V 66A TO220AB
|
封装: TO-220-3 |
库存2,544 |
|
MOSFET (Metal Oxide) | 25V | 66A (Tc) | 5V, 10V | 2V @ 1mA | 12nC @ 5V | 860pF @ 25V | ±20V | - | 93W (Tc) | 10.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 57A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,440 |
|
MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3300pF @ 25V | ±25V | - | 3.75W (Ta), 160W (Tc) | 23 mOhm @ 28.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 13A TO-220F
|
封装: TO-220-3 Full Pack |
库存4,464 |
|
MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 2055pF @ 25V | ±30V | - | 48W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 40V 195A TO262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,512 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 3.9V @ 250µA | 324nC @ 10V | 10820pF @ 25V | ±20V | - | 294W (Tc) | 1.6 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Microsemi Corporation |
MOSFET N-CH 600V 66A T-MAX
|
封装: TO-247-3 Variant |
库存6,224 |
|
MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 5V @ 2.5mA | 330nC @ 10V | 13190pF @ 25V | ±30V | - | 1135W (Tc) | 100 mOhm @ 33A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Vishay Siliconix |
MOSFET P-CH 200V 11A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,208 |
|
MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V | - | 3W (Ta), 125W (Tc) | 500 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET N-CH 30V 65A U8FL
|
封装: 8-PowerWDFN |
库存7,072 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Texas Instruments |
MOSFET P-CH 20V 3.2A 6DSBGA
|
封装: 6-UFBGA, DSBGA |
库存4,896 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.5V, 4.5V | 1.1V @ 250µA | 4.1nC @ 4.5V | 570pF @ 10V | -6V | - | 1W (Ta) | 33 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |
||
Rohm Semiconductor |
MOSFET N-CH 600V 15A TO3PF
|
封装: TO-3P-3 Full Pack |
库存9,384 |
|
MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 4V @ 1mA | 40nC @ 10V | 910pF @ 25V | ±20V | - | 120W (Tc) | 290 mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存9,228 |
|
MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | ±20V | - | 35W (Tc) | 8.2 mOhm @ 20A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8
|
封装: 8-PowerTDFN |
库存2,384 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 40nC @ 10V | 3100pF @ 15V | ±20V | - | 2.1W (Ta), 45W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N CH 650V 11A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,280 |
|
MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | ±25V | - | 110W (Tc) | 455 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 700V 20.5A IPAK
|
封装: TO-251-3 Stub Leads, IPak |
库存19,344 |
|
MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 3.5V @ 90µA | 10.5nC @ 10V | 364pF @ 400V | ±16V | - | 43W (Tc) | 600 mOhm @ 1.8A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251 | TO-251-3 Stub Leads, IPak |
||
Central Semiconductor Corp |
MOSFET P-CH 30V 450MA SOT523
|
封装: SOT-523 |
库存2,512 |
|
MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.88nC @ 4.5V | 55pF @ 25V | 8V | - | 250mW (Ta) | 1.1 Ohm @ 430mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Infineon Technologies |
MOSFET N-CH 100V 73A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存115,728 |
|
MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | ±20V | - | 190W (Tc) | 14 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存288,660 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | ±20V | - | 2.5W (Ta) | 13.8 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存307,356 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 62nC @ 10V | 2470pF @ 15V | ±25V | - | 2.5W (Ta) | 13 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
PXN012-60QL/SOT8002/MLPAK33
|
封装: - |
库存128,550 |
|
MOSFET (Metal Oxide) | 60 V | 42A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 18.77 nC @ 10 V | 957 pF @ 30 V | ±20V | - | 34.7W (Tc) | 11.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | MLPAK33 | 8-PowerVDFN |
||
Rohm Semiconductor |
1200V, 10A, THD, SILICON-CARBIDE
|
封装: - |
库存1,320 |
|
SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 18V | 4V @ 900µA | 27 nC @ 18 V | 463 pF @ 800 V | +22V, -6V | - | 85W (Tc) | 585mOhm @ 3A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 19A/100A TDSON
|
封装: - |
库存80,733 |
|
MOSFET (Metal Oxide) | 100 V | 19A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 115µA | 46 nC @ 4.5 V | 6500 pF @ 50 V | ±20V | - | 2.5W (Ta), 156W (Tc) | 3.4mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 500V 48A TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 5V @ 250µA | 137 nC @ 10 V | 6460 pF @ 25 V | ±20V | - | 625W (Tc) | 105mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
SICFET N-CH 1.2KV 13A TO247-3
|
封装: - |
库存3,834 |
|
SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | 15V, 18V | 5.7V @ 1.6mA | 8.5 nC @ 18 V | 289 pF @ 800 V | +23V, -7V | - | 75W (Tc) | 286mOhm @ 4A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
Nexperia USA Inc. |
BUK6D120-60P/SOT1220/SOT1220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 3A (Ta), 8A (Tc) | 4.5V, 10V | 3.2V @ 250µA | 18 nC @ 10 V | 724 pF @ 30 V | ±20V | - | 2.3W (Ta), 15W (Tc) | 120mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 5A 6TSOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 2.5V, 10V | 1.3V @ 250µA | 17 nC @ 10 V | 780 pF @ 15 V | ±12V | - | 2W (Ta) | 47mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |