图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 59A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,816 |
|
MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | - | 57W (Tc) | 9.5 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V 9.2A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存392,784 |
|
MOSFET (Metal Oxide) | 40V | 9.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 50nC @ 10V | 2115pF @ 20V | ±20V | - | 1.5W (Ta) | 10 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N-CH 20V 11.6A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,640 |
|
MOSFET (Metal Oxide) | 20V | 11.6A (Ta) | 2.5V, 10V | 2V @ 250µA | 9.1nC @ 4.5V | 857pF @ 10V | ±12V | - | 2.14W (Ta) | 21 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 25A TO-220F
|
封装: TO-220-3 Full Pack |
库存3,376 |
|
MOSFET (Metal Oxide) | 80V | 25A (Tc) | 10V | 4V @ 250µA | 50nC @ 10V | 1430pF @ 25V | ±25V | - | 41W (Tc) | 34 mOhm @ 12.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 600V 7.3A TO251
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存2,624 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 650V 10.1A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,072 |
|
MOSFET (Metal Oxide) | 650V | 10.1A (Tc) | 10V | 3.5V @ 0.21mA | 23nC @ 10V | 440pF @ 100V | ±20V | Super Junction | 86W (Tc) | 650 mOhm @ 2.1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1000V 18A ISOPLUS247
|
封装: TO-247-3 |
库存3,648 |
|
MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 6.5V @ 4mA | 140nC @ 10V | 7200pF @ 25V | ±30V | - | 500W (Tc) | 490 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | TO-247-3 |
||
IXYS |
MOSFET N-CH 500V 30A TO-264AA
|
封装: TO-264-3, TO-264AA |
库存7,488 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 4.5V @ 4mA | 150nC @ 10V | 3950pF @ 25V | ±20V | - | 416W (Tc) | 160 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 600V 10A D2-PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,328 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 5.5V @ 250µA | 32nC @ 10V | 1610pF @ 25V | ±30V | - | 200W (Tc) | 740 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
PT8 N 30/20 IN POWERCLIP 56 SING
|
封装: 8-PowerTDFN |
库存8,616 |
|
MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 3V @ 750µA | 285nC @ 10V | 22610pF @ 15V | ±20V | - | 156W (Tc) | 0.65 mOhm @ 55A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 60V SO8FL
|
封装: 8-PowerTDFN |
库存6,192 |
|
MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 2V @ 135µA | 52nC @ 10V | 3600pF @ 25V | ±20V | - | 3.7W (Ta), 110W (Tc) | 2.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,648 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.3V, 10V | 2V @ 1mA | 128nC @ 5V | 8260pF @ 25V | ±15V | - | 300W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 72A TO263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,856 |
|
MOSFET (Metal Oxide) | 60V | 11A (Ta), 72A (Tc) | 10V | 3.6V @ 250µA | 55nC @ 10V | 2995pF @ 30V | ±20V | - | 2.1W (Ta), 100W (Tc) | 7.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET NCH 30V 22A POWERDI
|
封装: 8-PowerVDFN |
库存4,768 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 10V | 2370pF @ 15V | ±20V | - | 2.4W (Ta), 62W (Tc) | 3.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
||
Vishay Siliconix |
MOSFET P-CH 12V 8A 6-TSOP
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存686,244 |
|
MOSFET (Metal Oxide) | 12V | 8A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 65nC @ 8V | 2010pF @ 6V | ±8V | - | 2W (Ta), 4.2W (Tc) | 22 mOhm @ 8.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 34A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,280 |
|
MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 3V @ 250µA | 265nC @ 10V | 11400pF @ 15V | ±20V | - | 300W (Tc) | 1.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 100V 35A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存514,992 |
|
MOSFET (Metal Oxide) | 100V | 35A (Tc) | 7V, 10V | 4.4V @ 250µA | 47nC @ 10V | 2000pF @ 12V | ±20V | - | 8.3W (Ta), 83W (Tc) | 26 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
封装: TO-220-3 Full Pack |
库存15,744 |
|
MOSFET (Metal Oxide) | 60V | 50A | 4.5V, 10V | 2.5V @ 300µA | 28.4nC @ 10V | 1990pF @ 25V | ±20V | - | 36W (Tc) | 11.4 mOhm @ 8A, 4.5V | 175°C (TJ) | Surface Mount | TO-220SIS | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET P-CH 30V 20A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存334,548 |
|
MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | ±20V | - | 2.5W (Ta) | 4.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 620V 2.5A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存12,732 |
|
MOSFET (Metal Oxide) | 620V | 2.5A (Tc) | 10V | 4.5V @ 50µA | 17nC @ 10V | 386pF @ 50V | ±30V | - | 45W (Tc) | 3 Ohm @ 1.25A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Goford Semiconductor |
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
|
封装: - |
库存10,860 |
|
MOSFET (Metal Oxide) | 30 V | 10A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17 nC @ 4.5 V | 839 pF @ 15 V | ±20V | - | 2.5W (Tc) | 12mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CHANNEL 400V
|
封装: - |
库存3,774 |
|
MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 4V @ 250µA | 20 nC @ 10 V | 350 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 1.8Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
TRANSISTOR
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8
|
封装: - |
库存7,611 |
|
MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 130 nC @ 10 V | 4980 pF @ 15 V | ±20V | - | 83W (Tc) | 1.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
onsemi |
NCH 10V DRIVE SERIES
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | 2767 pF @ 25 V | ±20V | - | 2.1W (Ta) | 14mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 350mA (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | 0.87 nC @ 4.5 V | 34 pF @ 15 V | ±10V | - | 300mW (Ta) | 1.2Ohm @ 350mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
YAGEO XSEMI |
MOSFET N-CH 500V 5A TO252
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 4V @ 250µA | 24.6 nC @ 10 V | 800 pF @ 100 V | ±30V | - | 2W (Ta), 50W (Tc) | 1.5Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
SICFET N-CH 650V 39A TO247-4L
|
封装: - |
库存1,050 |
|
SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | 852 pF @ 500 V | +22V, -4V | - | 165W | 78mOhm @ 13A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 80V 75A TO220-FP
|
封装: - |
库存1,008 |
|
MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 6V, 10V | 3.5V @ 155µA | 117 nC @ 10 V | 8110 pF @ 40 V | ±20V | - | 41W (Tc) | 3.7mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |