图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 80V 100A TO220-3
|
封装: TO-220-3 |
库存3,888 |
|
MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | ±20V | - | 214W (Tc) | 3.75 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Global Power Technologies Group |
MOSFET N-CH 600V 2A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,904 |
|
MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 5V @ 250µA | 9nC @ 10V | 360pF @ 25V | ±30V | - | 52.1W (Tc) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 25V 11.2A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存5,232 |
|
MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | - | 2.5V @ 250µA | 19.2nC @ 4.5V | 1563pF @ 12V | - | - | 1.3W (Ta), 54.5W (Tc) | 6.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
IXYS |
MOSFET N-CH 500V 36A PLUS220
|
封装: TO-220-3, Short Tab |
库存7,296 |
|
MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 5V @ 4mA | 93nC @ 10V | 5500pF @ 25V | ±30V | - | 540W (Tc) | 170 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
Diodes Incorporated |
MOSFET N-CH 50V 0.2A SOT323
|
封装: SC-70, SOT-323 |
库存396,000 |
|
MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 10V | 1.5V @ 250µA | - | 50pF @ 10V | ±20V | - | 200mW (Ta) | 3.5 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,672 |
|
MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 229pF @ 25V | ±30V | - | 36W (Tc) | 7 Ohm @ 840mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 200V 3A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存114,720 |
|
MOSFET (Metal Oxide) | 200V | 3A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 340pF @ 15V | ±20V | - | 30W (Tc) | 1.5 Ohm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Vishay Siliconix |
MOSFET N-CH 400V 2.6A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存153,732 |
|
MOSFET (Metal Oxide) | 400V | 2.6A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 410pF @ 25V | ±20V | - | 30W (Tc) | 1.8 Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
NXP |
MOSFET N-CH 25V 97A LFPAK
|
封装: SC-100, SOT-669 |
库存7,584 |
|
MOSFET (Metal Oxide) | 25V | 97A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 21.6nC @ 10V | 1585pF @ 12V | ±20V | - | 64W (Tc) | 3.9 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
MOSFET N-CH 560V 11.6A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存555,900 |
|
MOSFET (Metal Oxide) | 560V | 11.6A (Tc) | 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 380 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRANSISTOR P-CH BARE DIE
|
封装: - |
库存3,472 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
MOSFET N-CH 400V 0.175A TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存3,152 |
|
MOSFET (Metal Oxide) | 400V | 175mA (Tj) | 4.5V, 10V | 2V @ 1mA | - | 125pF @ 25V | ±20V | - | 1W (Ta) | 12 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 9A 6DFN
|
封装: 6-UDFN Exposed Pad |
库存2,576 |
|
MOSFET (Metal Oxide) | 20V | 9A (Ta) | 1.8V, 4.5V | 700mV @ 250µA | 34nC @ 4.5V | 2175pF @ 10V | ±12V | - | 1.7W (Ta), 12.5W (Tc) | 14 mOhm @ 9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
||
STMicroelectronics |
MOSFET N-CH 600V 13A TO247
|
封装: TO-247-3 |
库存5,392 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 4V @ 250µA | 21.7nC @ 10V | 787pF @ 100V | ±25V | - | 110W (Tc) | 278 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET NCH 650V 12A TO263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,712 |
|
MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | ±30V | - | 278W (Tc) | 720 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 500V 4.5A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,312 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 610pF @ 25V | ±20V | - | 74W (Tc) | 1.5 Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Texas Instruments |
MOSFET N-CH 100V 15A VSONP
|
封装: 8-PowerVDFN |
库存14,196 |
|
MOSFET (Metal Oxide) | 100V | 15A (Ta) | 6V, 10V | 3.8V @ 250µA | 4.3nC @ 10V | 454pF @ 50V | ±20V | - | 2.8W (Ta), 23W (Tc) | 59 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 800V 11A TO-220AB
|
封装: TO-220-3 |
库存15,072 |
|
MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 3.9V @ 680µA | 85nC @ 10V | 1600pF @ 100V | ±20V | - | 156W (Tc) | 450 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3
|
封装: TO-220-3 |
库存19,734 |
|
MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4V @ 90µA | 98nC @ 10V | 11000pF @ 30V | ±20V | - | 188W (Tc) | 4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 35.6A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存36,972 |
|
MOSFET (Metal Oxide) | 30V | 35.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28nC @ 10V | 1084pF @ 15V | ±20V | - | 3.9W (Ta), 29.8W (Tc) | 13 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET N-CH 650V 28A TO-247AC
|
封装: TO-247-3 |
库存10,692 |
|
MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | ±30V | - | 250W (Tc) | 117 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 2A TUMT6
|
封装: 6-SMD, Flat Leads |
库存72,000 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 4.9nC @ 4.5V | 430pF @ 10V | ±12V | - | 1W (Ta) | 135 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 200V 88A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存21,054 |
|
MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | ±20V | - | 300W (Tc) | 10.7 mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 200V 2.6A PPAK SO-8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 2.6A (Ta) | - | 4V @ 250µA | 30 nC @ 10 V | - | - | - | - | 130mOhm @ 4.1A, 10V | - | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 6.5A (Tc) | 10V | 3.5V @ 250µA | 165 nC @ 10 V | 3500 pF @ 25 V | ±30V | - | 100W (Tc) | 950mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 9A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 600 pF @ 25 V | ±20V | - | 75W (Tc) | 400mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
||
onsemi |
PTNG 150V IN CEBU DFNW 8X8 DUAL
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 23A (Ta), 165A (Tc) | 10V | 4.5V @ 521µA | 79 nC @ 10 V | 6514 pF @ 75 V | ±20V | - | 5W (Ta), 292W (Tc) | 4.45mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-TDFNW (8.3x8.4) | 8-PowerTDFN |
||
Nexperia USA Inc. |
650 V, 190 MOHM GALLIUM NITRIDE
|
封装: - |
库存6,876 |
|
GaNFET (Gallium Nitride) | 650 V | 11.5A (Ta) | 6V | 2.5V @ 12.2mA | 2.8 nC @ 6 V | 96 pF @ 400 V | +7V, -1.4V | - | 125W (Ta) | 190mOhm @ 3.9A, 6V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | DFN8080-8 | 8-VDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET P-CH 20V TSOT26
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5.5A (Ta), 13A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 8.6 nC @ 4.5 V | 834 pF @ 10 V | ±12V | - | 1.2W (Ta) | 38mOhm @ 8.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
N-CHANNEL 30-V (D-S) MOSFET POWE
|
封装: - |
库存28,056 |
|
MOSFET (Metal Oxide) | 30 V | 26A (Ta), 104A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 36.2 nC @ 10 V | 1710 pF @ 15 V | +20V, -16V | - | 3.8W (Ta), 63W (Tc) | 3.6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |