图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,600 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V 41A SGL DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存120,012 |
|
MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | - | 2.2V @ 250µA | 17.5nC @ 10V | 1314pF @ 15V | - | - | - | 8 mOhm @ 30A, 10V | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 6.5A TO-220
|
封装: TO-220-3 |
库存128,460 |
|
MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 5V, 10V | 2V @ 250µA | 9nC @ 5V | 500pF @ 25V | ±20V | - | 63W (Tc) | 750 mOhm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 19A TO-220AB
|
封装: TO-220-3 |
库存3,696 |
|
MOSFET (Metal Oxide) | 200V | 19A (Ta) | 10V | 4.5V @ 250µA | 38nC @ 10V | 1320pF @ 100V | ±20V | - | 93W (Tc) | 130 mOhm @ 10A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 1.7A 4-DIP
|
封装: 4-DIP (0.300", 7.62mm) |
库存12,804 |
|
MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4V, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | ±10V | - | 1.3W (Ta) | 200 mOhm @ 1A, 5V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,632 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 3.5V @ 1.1mA | 43nC @ 10V | 1520pF @ 100V | ±20V | - | 139W (Tc) | 199 mOhm @ 9.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V 120A SO8FL
|
封装: 8-PowerTDFN |
库存4,864 |
|
MOSFET (Metal Oxide) | 40V | 21A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 51nC @ 10V | 2700pF @ 25V | ±20V | - | 3.7W (Ta), 127W (Tc) | 4.2 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 600V 6A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存186,072 |
|
MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 4.5V @ 100µA | 46nC @ 10V | 905pF @ 25V | ±30V | - | 110W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 20V 50A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存6,432 |
|
MOSFET (Metal Oxide) | 20V | 50A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 310nC @ 10V | 9080pF @ 10V | ±12V | - | 5W (Ta), 39W (Tc) | 3.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 120A TO-220-3
|
封装: TO-220-3 |
库存9,228 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 250µA | 99nC @ 10V | 8030pF @ 30V | ±20V | - | 205W (Tc) | 3.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 50A TO-220
|
封装: TO-220-3 |
库存8,040 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 7.5V, 10V | 4V @ 250µA | 50nC @ 10V | 1950pF @ 50V | ±20V | - | 125W (Tc) | 8.9 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 600V 7.1A TO220FP
|
封装: TO-220-3 Full Pack |
库存60,360 |
|
MOSFET (Metal Oxide) | 600V | 7.1A (Tc) | 10V | 4.5V @ 100µA | 47nC @ 10V | 1107pF @ 25V | ±30V | - | 35W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 120A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,152 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 5V | 2.1V @ 1mA | 95nC @ 5V | 13490pF @ 25V | ±10V | - | 293W (Tc) | 3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,296 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 4V @ 1mA | 91nC @ 10V | 6212pF @ 25V | ±20V | - | 300W (Tc) | 2.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 20.3A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存17,544 |
|
MOSFET (Metal Oxide) | 55V | 20.3A (Tc) | 10V | 4V @ 1mA | - | 483pF @ 25V | ±20V | - | 62W (Tc) | 75 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 79A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存779,724 |
|
MOSFET (Metal Oxide) | 150V | 8A (Ta), 79A (Tc) | 6V, 10V | 4V @ 250µA | 107nC @ 10V | 5870pF @ 25V | ±20V | - | 310W (Tc) | 16 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V SOT-223-4
|
封装: TO-261-4, TO-261AA |
库存4,992 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 5V, 10V | 2.8V @ 250µA | 3.77nC @ 10V | 225pF @ 50V | ±20V | - | 10.42W (Tc) | 160 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 10A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存668,220 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.6V @ 250µA | 8.6nC @ 10V | 448pF @ 15V | ±20V | - | 3.1W (Ta) | 23 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 2.3A SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存57,672 |
|
MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 4.5V, 10V | 2V @ 11µA | 1.5nC @ 5V | 275pF @ 15V | ±20V | - | 500mW (Ta) | 57 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 800V 6A TO220FP
|
封装: TO-220-3 Full Pack |
库存533,304 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 3.9V @ 250µA | 41nC @ 10V | 785pF @ 100V | ±20V | - | 39W (Tc) | 900 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
NTE Electronics, Inc |
MOSFET N-CHANNEL 500V 8A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 4V @ 250µA | 63 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 125W (Tc) | 850mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
onsemi |
POWER MOSFET, 60 V, 1.1 M?, 342
|
封装: - |
库存1,728 |
|
MOSFET (Metal Oxide) | 60 V | 42A (Ta), 342A (Tc) | 10V, 12V | 4V @ 562µA | 139 nC @ 10 V | 11110 pF @ 30 V | ±20V | - | 3.7W (Ta), 245W (Tc) | 1.1mOhm @ 112A, 12V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-7, D2PAK (6 Leads + Tab) |
||
Diodes Incorporated |
DIODE GP SOT23
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 30mA (Ta) | 0V, 10V | 1.4V @ 8µA | 2 nC @ 5 V | 30.9 pF @ 25 V | ±20V | Depletion Mode | 1W (Ta) | 500Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Goford Semiconductor |
P-60V,-40A,RD(MAX)<30M@-10V,VTH-
|
封装: - |
库存14,892 |
|
MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 10V | 3V @ 250µA | 49 nC @ 10 V | 2705 pF @ 30 V | ±20V | - | 50W (Tc) | 30mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (4.9x5.75) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 600V 10A PWRFLAT HV
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 4.75V @ 250µA | 16.7 nC @ 10 V | 575 pF @ 100 V | ±25V | - | 90W (Tc) | 350mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
||
Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 1.6A (Tc) | 10V | 4V @ 250µA | 11 nC @ 10 V | 285 pF @ 25 V | ±30V | - | 2.5W (Ta), 19W (Tc) | 3Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 30 V (D-S)
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 192A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 88 nC @ 10 V | 4590 pF @ 25 V | ±20V | - | 119W (Tc) | 1.8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW | PowerPAK® 1212-8SLW |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 150V 1.4A SOT26
|
封装: - |
库存51,390 |
|
MOSFET (Metal Oxide) | 150 V | 1.4A (Tc) | 6V, 10V | 3.5V @ 250µA | 8 nC @ 10 V | 332 pF @ 10 V | ±20V | - | 2.1W (Tc) | 480mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
||
Panjit International Inc. |
SOT-23, MOSFET
|
封装: - |
库存186,210 |
|
MOSFET (Metal Oxide) | 30 V | 5.6A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 7.8 nC @ 10 V | 343 pF @ 15 V | ±20V | - | 1.25W (Ta) | 30mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Transphorm |
GANFET N-CH 650V 20A 3PQFN
|
封装: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 2.6V @ 300µA | 42 nC @ 8 V | 760 pF @ 400 V | ±18V | - | 96W (Tc) | 130mOhm @ 14A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |